MA4F200 Search Results

Contextual Info: ñ / A - C O M ADVANCE» Sñ DE |sb4Slfl3 Q0D00D5 5 D MA4F200 Seríes Gallium Arsenide Power Field Effect Transistor GaAs FET m i Preliminary Data Sheet Description and Applications The MA4F200 series is a 1 micron recessed gate structure GaAs power FET for am plifier applica­

Contextual Info: 5642214 N/A-CON m/a-com semiconductor SEMICONDUCTOR 930 T3 00638 PE|St4ESm T '3 < 7 . o DDDDtaa s ' 0 V~ MA4F200 Series ûallium Arsenide Power Field Effect Transistor GaAs FET Preliminary Data Sheet Description and Applications The MA4F200 series is a 1 micron recessed gate

MA4F004

Contextual Info: Vv M/A-COM ADVANCED DE |st,4aifl3 ODDDDCH □ | ' 7 ' 3 / ' ^ 5 A ßm MA4F004 Series Gallium Arsenide Field Effect Transistor Description Features The MA4F004 series of gallium arsenide fieldeffect transistors GaAs FETs is a series of Schottky barrier devices with a 1 micron length X

MICROWAVE ASSOCIATES

Abstract: 2.5 GHz RF power transistors with s-parameters RF transistors with s-parameters TIP 298 MA4F600
Contextual Info: n/A-COn ADVANCED Sfl DE J S b 4 E l f l 3 □□□□017 T jp D J- 3t~Z? MfoCCA MA4F001 Series Gallium Arsenide Field Effect Transistors Description The MA4F001 series of gallium arsenide fieldeffect transistors GaAs FETs is a series of low power Schottky barrier gate devices with a 1

MICROWAVE ASSOCIATES

Abstract: pa 3029 b Dielectric Resonator Oscillator DRO high power FET transistor s-parameters 2.5 GHz RF power transistors with s-parameters RF transistors with s-parameters 5218 chip ic TIP 298
Contextual Info: M/A-C'OM' SEMICONDUCTOR _ci3 DE |St.45E] M □□00L30 S MA4F001 Series ¡88 Gallium Arsenide Field ^ Effect Transistors % S t su* mi IP I i Description a The MA4F001 series of gallium arsenide fieldeffect transistors (GaAs FETs) is a series of low power Schottky barrier gate devices with a 1

FET transistors with s-parameters

Abstract: MICROWAVE ASSOCIATES MA4F600 f TIP 122 transistor MA4F004-918 ma4f004
Contextual Info: M/A-COM SEMICONDUCTOR “TÍ »T|st,M2al4 000Db25 t. J~. ¿S' AߣR MA4F004 Series Gallium Arsenide Field Effect Transistor Description The MA4F004 series of gallium arsenide fieldeffect transistors GaAs FETs is a series of Schottky barrier devices with a 1 micron length X