MA557 Search Results

MI407

Abstract: MI402 610F MA556 MA557 MI303 MI308 ND6281-3A ND6361-3A ND6361-3D
Contextual Info: - fi & £ ö S MA556 föT MA557 MI 101 MI105 MI 204 MI 206 MI 301 HÜ MI 303 MÍ308 Ml 402 M1407 ND6281-3A ND6 281-3D ND6361-3A s m ND6361-3D u n ND66S1-3A B 3 ND6651-3D B ^ S3005 S3 023 S3066 Vrrm V 45 45 30 30 30 80 180 50 270 50 110 110 110 110 33 33

MA3X557

Abstract: MA557
Contextual Info: PIN diodes MA3X557 MA557 Silicon epitaxial planar type Unit: mm For UHF and SHF bands AGC 0.40+0.10 –0.05 M Di ain sc te on na tin nc ue e/ d 0.16+0.10 –0.06 (0.65) 2 1 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 • Absolute Maximum Ratings Ta = 25°C

BM 78a

Abstract: MI407 MI402 MA556 MA557 MI303 MI308 ND6281-3A ND6361-3A ND6361-3D
Contextual Info: - & fi £ ö S MA556 föT MA557 MI 101 MI105 MI 204 MI 206 MI 301 HÜ MI 303 MÍ308 Ml 402 M1407 ND6281-3A ND6 281-3D ND6361-3A s m ND6361-3D u n ND66S1-3A B 3 ND6651-3D B ^ S3005 S3 023 S3066 Vrrm V 45 45 30 30 30 80 180 50 270 50 110 110 110 110 33 33

Contextual Info: PIN diodes MA3X557 MA557 Silicon epitaxial planar type Unit: mm For UHF and SHF bands AGC 0.40+0.10 –0.05 0.16+0.10 –0.06 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo

MA3X557

Abstract: MA557
Contextual Info: PIN diodes MA3X557 MA557 Silicon epitaxial planar type Unit: mm For UHF and SHF bands AGC 0.40+0.10 –0.05 0.4±0.2 5˚ 2 1 (0.65) • Small diode capacitance CD • Large variable range of forward dynamic resistance rf • Mini type package, allowing downsizing of equipment and automatic

MI402

Abstract: MI407 MI308 MI204 MA556 MA557 MI303 ND6281-3A ND6361-3A ND6361-3D
Contextual Info: - fi & £ ö S MA556 föT MA557 MI 101 MI105 MI 204 MI 206 MI 301 HÜ MI 303 MÍ308 Ml 402 M1407 ND6281-3A ND6 281-3D ND6361-3A s m ND6361-3D u n ND66S1-3A B 3 ND6651-3D B ^ S3005 S3 023 S3066 Vrrm V 45 45 30 30 30 80 180 50 270 50 110 110 110 110 33 33

MI407

Abstract: MI402 MA556 MA557 MI303 MI308 ND6281-3A ND6361-3A ND6361-3D ND6651-3D
Contextual Info: - fi & £ ö S MA556 fö T MA557 MI 101 MI105 MI 204 MI 206 MI 301 HÜ MI 303 MÍ308 Ml 402 M1407 ND6281-3A ND6 281-3D ND6361-3A s m ND6361-3D u n ND66S1-3A B 3 ND6651-3D B ^ S3005 S3 023 S3066 Vrrm V 45 45 30 30 30 80 180 50 270 50 110 110 110 110 33 33

MA3X557

Abstract: MA557
Contextual Info: PIN Diodes MA3X557 MA557 Silicon epitaxial planar type Unit : mm + 0.2 For UHF and SHF bands AGC 2.8 − 0.3 + 0.25 Unit Reverse voltage (DC) VR 40 V Peak reverse voltage VRM 45 V Forward current (DC) IF 100 mA Power dissipation PD 150 mW Operating ambient temperature*

MI308

Abstract: MI402 MI407 53005 MA556 MA557 MI303 ND6281-3A ND6361-3A ND6361-3D
Contextual Info: - fi & £ ö S MA556 föT MA557 MI 101 MI105 MI 204 MI 206 MI 301 HÜ MI 303 MÍ308 Ml 402 M1407 ND6281-3A ND6 281-3D ND6361-3A s m ND6361-3D u n ND66S1-3A B 3 ND6651-3D B ^ S3005 S3 023 S3066 Vrrm V 45 45 30 30 30 80 180 50 270 50 110 110 110 110 33 33

MI204

Abstract: MI407 MI402 MI301 53005 ND6281-3A MA556 MA557 MI303 MI308
Contextual Info: - & fi £ ö S MA556 föT MA557 MI 101 MI105 MI 204 MI 206 MI 301 HÜ MI 303 MÍ308 Ml 402 M1407 ND6281-3A ND6 281-3D ND6361-3A s m ND6361-3D u n ND66S1-3A B 3 ND6651-3D B ^ S3005 S3 023 S3066 Vrrm V 45 45 30 30 30 80 180 50 270 50 110 110 110 110 33 33

MI407

Abstract: MI402 MI204 MI303 MA556 MA557 MI308 ND6281-3A ND6361-3A ND6361-3D
Contextual Info: - fi & £ ö S MA556 föT MA557 MI 101 MI105 MI 204 MI 206 MI 301 HÜ MI 303 MÍ308 Ml 402 M1407 ND6281-3A ND6 281-3D ND6361-3A s m ND6361-3D u n ND66S1-3A B 3 ND6651-3D B ^ S3005 S3 023 S3066 Vrrm V 45 45 30 30 30 80 180 50 270 50 110 110 110 110 33 33

Contextual Info: PIN diodes MA3X557 MA557 Silicon epitaxial planar type Unit: mm For UHF and SHF bands AGC 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.65) 2 1 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 • Absolute Maximum Ratings Ta = 25°C Peak reverse voltage Forward current (DC)

MA557

Abstract: M30 marking
Contextual Info: MA111 PIN Diodes MA557 Silicon epitaxial planer type For UHF and SHF bands AGC Unit : mm +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 3 +0.2 2 Rating Unit 40 V +0.1 0.16 –0.06 0 to 0.1 0.1 to 0.3 0.4±0.2 • Absolute Maximum Ratings Ta= 25˚C

MA55

Abstract: DS2571 74FCT2X
Contextual Info: gSTs I dt Integrated Dev1ce Technology, Inc. HIGH-PERFORMANCE IDT54/74FCT841/2841AT/BT/CT/DT CMOS BUS INTERFACE LATCHES DESCRIPTION: FEA TU R ES: • Common features: - - The IDT54/74FCT8xx series is built using an advanced dual metal CMOS technology. The IDT54/74FCT841AT/BT/CT/DT bus Interface latches

MA661

Contextual Info: • Schottky Barrier Diodes SBD (For Power) n Type No. Main Characteristics (Ta =25 "C) Vf Vr Ir tr* max.(V) typ.(ns) (mA) (V) Package No. ■ —' < r Category A A A ■ Fast Recovery Diodes (FRD) ■ .- ■ MA749/A 40/45 5 0.55 11 1 TO-220(F) D55

Contextual Info: |P N $ J d t Integrated Device Technology, Inc. FAST CMOS 16-BIT BUS IDT54/74FCT16646T/AT/CT/ET TRANSCEIVER/ IDT54/74FCT162646T/AT/CT/ET REGISTERS 3-STATE) FEA TU R E S: • Common features: - 0.5 MICRON CMOS Technology - High-speed, low-power CMOS replacement for

R3081E

Abstract: MIPS R3051 t2222
Contextual Info: IDT 79R3081 , 79R3081E IDT 79RV3081, 79RV3081E IDT79R3081 RISController" Integrated Device Technology, Inc. FEATURES Large on-chip caches with user configurability — 16kB Instruction Cache, 4kB Data Cache — Dynamically configurable to 8kB Instruction Cache,

AMD2960

Abstract: 2595D IDT39C60B IDT39C60 AM01B IDT39C60A
Contextual Info: INTEGRATED DEVICE SflE D 4025771 QGl[H3fl 034 • IDT IDT39C60 IDT39C60-1 IDT39C60A IDT39C60B 16-BIT CMOS ERROR DETECTION AND CORRECTION UNIT FEATURES • Standard Military Drawing #5962-88613 available for this function • Low-power CEMOS — Military: 100mA max.

MA629

Abstract: MA7U49 220d MA750A MA689
Contextual Info: Diode • Schottky Barrier Diodes SBD (For Power) ■ Fast Recovery Diodes (FRD) Main Characteristics (Ta = 2 5 "C) Category Type No. trr* (A) max (V) typ (ns) (mA) 5 0.55 11 1 I f (AV| (V) Category Package VF Vr MA749/A 40/45 Main Characteristics (Ta = 2 5 °C)

AN3962FB

Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030

71256L25

Abstract: DIN 3968 71256L35
Contextual Info: INTEGRATED DEVICE SflE D 4ÖSS771 G01177S 037 • IDT VERY LOW POWER CMOS SRAM FOR NOTEBOOK/LAPTOP CACHE 256K 32K x 8-BIT IDT71256SL IDT71256L Integrated Device Technology, Inc. 3» FEATURES: • Optimized for 16/32bit notebook/laptop cache at 20 and 25MHz

Contextual Info: IDT72131 IDT72141 CMOS PARALLEL-TO-SERIAL FIFO 2048 x 9 4096 x 9 In te g ra te d D e v ic e T e c h n o lo g y , Inc. FEATURES: DESCRIPTION: • • • T h e ID T72131/72141 are high -spe ed, low p o w e r parallelto-serial FIFO s. T h ese F IF O s are id ea lly su ite d to serial

cu2i

Abstract: S496 S498 IDT71981 S4-102 S4103 S0282
Contextual Info: 14E D INTEGRATED DEVICE ÉPN.'" ' Mdt IntegratedDevteeTedinokpgy.Inc. • 4Ô2S771 QQ033bl 1 C M O S S T A T IC RA M S 6 4 K 1 6 K x 4-BIT) Separate Data Inputs and Outputs FEATURES: IDT 71981S/L IDT 71982S/L T-4V5 -¿3 'IO DESCRIPTION: • Optimized for fast R IS C processors Including the

IDT79R4400

Contextual Info: Integrated Device Technology, Inc. THIRD GENERATION 64-BIT SUPER-PIPELINED RISC MICROPROCESSOR FEATURES: IDT79R4400 IDT79RV4400 • Standard operating system support includes: — Microsoft Windows™ NT — UNISOFT UNIX™ System V.4 • Fully software compatible with R3000A 32-bit RISC