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    MBN1200H45E2 Search Results

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    MBN1200H45E2 Price and Stock

    Power Integrations 1SD210F2-MBN1200H45E2-H

    IC GATE DRVR HI/LOW SIDE MODULE
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    DigiKey 1SD210F2-MBN1200H45E2-H Tray
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    Power Integrations 1SP0335V2M1-MBN1200H45E2-H

    IC GATE DRVR HI/LOW SIDE MODULE
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    DigiKey 1SP0335V2M1-MBN1200H45E2-H Tray 6
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    Mouser Electronics 1SP0335V2M1-MBN1200H45E2-H
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    Power Integrations 1SP0335V2M1C-MBN1200H45E2-H

    IC GATE DRVR HI/LOW SIDE MODULE
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    DigiKey 1SP0335V2M1C-MBN1200H45E2-H Tray 6
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    Mouser Electronics 1SP0335V2M1C-MBN1200H45E2-H
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    Power Integrations 1SD210F2-MBN1200H45E2-H_OPT1

    IC GATE DRVR HI/LOW SIDE MODULE
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    Power Integrations 1SP0335D2S1-MBN1200H45E2-H

    Gate Drivers ONLY for Hitachi MBN1200H45E2-H module
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    Mouser Electronics 1SP0335D2S1-MBN1200H45E2-H
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    MBN1200H45E2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-09017 R7 MBN1200H45E2-H Silicon N-channel IGBT 4500V E2 version FEATURES ∗ Low switching loss IGBT module. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module. ∗ High thermal fatigue durability.


    Original     		PDF IGBT-SP-09017 MBN1200H45E2-H 000cycles)

    MBN1200H45E2

    Abstract: Hitachi DSA00281
    Text: IGBT MODULE Spec.No.IGBT-SP-08007 R4 MBN1200H45E2 Silicon N-channel IGBT 4500V E2 version Target Specification Unit in mm OUTLINE DRAWING FEATURES ∗ Low conduction loss IGBT module. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.


    Original     		PDF IGBT-SP-08007 MBN1200H45E2 000cycles) MBN1200H45E2 Hitachi DSA00281

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-09017 R8 MBN1200H45E2-H Silicon N-channel IGBT 4500V E2 version FEATURES  Low switching loss IGBT module.  Low noise due to ultra soft fast recovery diode.  High reliability, high durability module.  High thermal fatigue durability.


    Original     		PDF IGBT-SP-09017 MBN1200H45E2-H 000cycles)

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE MBN1200H45E2 Silicon N-channel IGBT 4500V E2 version Target Specification Unit in mm OUTLINE DRAWING FEATURES ∗ Low conduction loss IGBT module. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.


    Original     		PDF MBN1200H45E2 000cycles)

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-08007 R6 MBN1200H45E2 Silicon N-channel IGBT 4500V E2 version FEATURES  Low conduction loss IGBT module.  Low noise due to ultra soft fast recovery diode.  High reliability, high durability module.  High thermal fatigue durability.


    Original     		PDF IGBT-SP-08007 MBN1200H45E2 000cycles)

    MBN1200H45

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-08007 R6 MBN1200H45E2 Silicon N-channel IGBT 4500V E2 version FEATURES ∗ Low conduction loss IGBT module. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module. ∗ High thermal fatigue durability.


    Original     		PDF IGBT-SP-08007 MBN1200H45E2 000cycles) MBN1200H45

    MBN1200H45E2-H

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-09017 R5 MBN1200H45E2-H P1 Preliminary Specification Silicon N-channel IGBT 4500V E2 version FEATURES ∗ Low switching loss IGBT module. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.


    Original     		PDF IGBT-SP-09017 MBN1200H45E2-H 000cycles) MBN1200H45E2-H

    MBN1200H45E2

    Abstract: MBN1200H45
    Text: IGBT MODULE Spec.No.IGBT-SP-08007 R3 MBN1200H45E2 Silicon N-channel IGBT 4500V E2 version Target Specification Unit in mm OUTLINE DRAWING FEATURES ∗ Low conduction loss IGBT module. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.


    Original     		PDF IGBT-SP-08007 MBN1200H45E2 000cycles) MBN1200H45E2 MBN1200H45

    Untitled

    Abstract: No abstract text available
    Text: DIODE MODULE Spec.No.SR2-SP-09005 R6 P1 MDM1200H45E2-H FEATURES  Low Reverse Recovery Loss diode module.  Low noise recovery: Ultra soft fast recovery diode.  High reverse recovery capability: Super HiRC Structure.  High reliability, high durability diodes.


    Original     		PDF SR2-SP-09005 MDM1200H45E2-H

    MBN1200H45E2-H

    Abstract: No abstract text available
    Text: DIODE MODULE Spec.No.SR2-SP-09006 R2 P1 MDM1200H45E2 FEATURES  Low VF diode module.  Low noise recovery: Ultra soft fast recovery diode.  High reverse recovery capability: Super HiRC Structure.  High reliability, high durability diodes.  Isolated heat sink terminal to base .


    Original     		PDF SR2-SP-09006 MDM1200H45E2 MBN1200H45E2-H

    mbm150gr12

    Abstract: MBN1200D33A C2E1 MBM300GS12A 5252 F 1002 MDN1200D33 m8nd mbm200js12ew MBM800E17D mbn1200e25c igbt
    Text: Status List Date:Sept. 2010 Compliance status of RoHS directive C:Compliant S.C:Compliant N:Non compliant Included RoHS exemption substance Production Status M:Mass production W:Working sample D:Discontinued High-Voltage High-Power Series Electrical Characteristics


    Original     		PDF MBN1200E17D MBN1600E17D MBN1800E17D KS10004 mbm150gr12 MBN1200D33A C2E1 MBM300GS12A 5252 F 1002 MDN1200D33 m8nd mbm200js12ew MBM800E17D mbn1200e25c igbt

    Untitled

    Abstract: No abstract text available
    Text: DIODE MODULE Spec.No.SR2-SP-09006 R1 P1 MDM1200H45E2 FEATURES ∗ Low VF diode module. ∗ Low noise recovery: Ultra soft fast recovery diode. ∗ High reverse recovery capability: Super HiRC Structure. ∗ High reliability, high durability diodes. ∗ Isolated heat sink terminal to base .


    Original     		PDF SR2-SP-09006 MDM1200H45E2

    MDM1200H45E2-H

    Abstract: mbn1200h45e2-h MBN1200H45
    Text: DIODE MODULE Spec.No.SR2-SP-09005 R4 MDM1200H45E2-H P1 Preliminary Specification FEATURES ∗ Low Reverse Recovery Loss diode module. ∗ Low noise recovery: Ultra soft fast recovery diode. ∗ High reverse recovery capability: Super HiRC Structure. ∗ High reliability, high durability diodes.


    Original     		PDF SR2-SP-09005 MDM1200H45E2-H MDM1200H45Er MDM1200H45E2-H mbn1200h45e2-h MBN1200H45

    Hitachi DSA00281

    Abstract: MBN1200H45
    Text: DIODE MODULE Spec.No.SR2-SP-09006 R0 MDM1200H45E2 P1/2 TARGET Specification OUTLINE DRAWING FEATURES ∗ Low VF diode module. ∗ Low noise recovery: Ultra soft fast recovery diode. ∗ High reverse recovery capability: Super HiRC Structure. ∗ High reliability, high durability diodes.


    Original     		PDF SR2-SP-09006 MDM1200H45E2 Hitachi DSA00281 MBN1200H45

    Untitled

    Abstract: No abstract text available
    Text: DIODE MODULE Spec.No.SR2-SP-10001 R1 MDM800H45E2-H Target Specification FEATURES ∗ Low Reverse Recovery Loss diode module. ∗ Low noise recovery: Ultra soft fast recovery diode. ∗ High reverse recovery capability: Super HiRC Structure. ∗ High reliability, high durability diodes.


    Original     		PDF SR2-SP-10001 MDM800H45E2-H MDM800H45r

    Untitled

    Abstract: No abstract text available
    Text: DIODE MODULE Spec.No.SR2-SP-10001 R2 P1 MDM800H45E2-H Target Specification FEATURES  Low Reverse Recovery Loss diode module.  Low noise recovery: Ultra soft fast recovery diode.  High reverse recovery capability: Super HiRC Structure.  High reliability, high durability diodes.


    Original     		PDF SR2-SP-10001 MDM800H45E2-H