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Catalog Datasheet	Type	Document Tags	PDF
MDS3651 Abstract: MDS365 mds3651r p-channel 60V 100A MOSFET Contextual Info: Preliminary – Subject to change without notice Single P-Channel Trench MOSFET, -30V, -5.3A, 35mΩ General Description Features The MDS3651 uses advanced MagnaChip’s MOSFET Technology to provide low on-state resistance, high switching performance and excellent reliability	Original	MDS3651 MDS3651 MDS365 mds3651r p-channel 60V 100A MOSFET	PDF
Contextual Info: Preliminary – Subject to change without notice P-Channel Trench MOSFET -30V, -5.3A, 35mΩ General Description Features The MDS3651 uses advanced Magnachip’s MOSFET Technology to provide low on-state resistance, high switching performance and excellent	Original	MDS3651 MDS3651â	PDF

Catalog Datasheet

Type

Document Tags

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MDS3651

Abstract: MDS365 mds3651r p-channel 60V 100A MOSFET
Contextual Info: Preliminary – Subject to change without notice Single P-Channel Trench MOSFET, -30V, -5.3A, 35mΩ General Description Features The MDS3651 uses advanced MagnaChip’s MOSFET Technology to provide low on-state resistance, high switching performance and excellent reliability

Original

MDS3651 MDS3651 MDS365 mds3651r p-channel 60V 100A MOSFET

PDF

Contextual Info: Preliminary – Subject to change without notice P-Channel Trench MOSFET -30V, -5.3A, 35mΩ General Description Features The MDS3651 uses advanced Magnachip’s MOSFET Technology to provide low on-state resistance, high switching performance and excellent

Original

MDS3651 MDS3651â

PDF