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    MGFC42V3436 Search Results

    MGFC42V3436 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MGFC42V3436 Mitsubishi 3.4 - 3.6GHz BAND 16W INTERNALLY MATCHED GaAs FET Original PDF
    MGFC42V3436 Mitsubishi 3.4 - 3.6GHz BAND 16W INTERNALLY MATCHED GaAs FET Original PDF

    MGFC42V3436 Datasheets Context Search

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    PO32

    Abstract: MGFC42V3436
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V3436 3.4 - 3.6GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters 24+/-0.3 R1.25 1 0.6+/-0.15 2MIN The MGFC42V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 - 3.6


    Original     		PDF MGFC42V3436 MGFC42V3436 -45dBc 32dBm June/2004 PO32

    4433 fet

    Abstract: F4535 high power FET transistor s-parameters MGFC42V3436 VDS-10
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V3436 3.4 - 3.6GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC42V3436 is an internally impedance-matched Unit: millimeters GaAs power FET especially designed for use in 3.4 - 3.6 24+/-0.3


    Original     		PDF MGFC42V3436 MGFC42V3436 4433 fet F4535 high power FET transistor s-parameters VDS-10

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC42V3436 3.4 – 3.6 GHz BAND / 16W OUTLINE DRAWING DESCRIPTION The MGFC42V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 – 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC42V3436 MGFC42V3436 25ohm

    MGFC42V3436

    Abstract: R1251 C 34 F
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V3436 3.4 - 3.6GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters 24+/-0.3 R1.25 1 0.6+/-0.15 2MIN The MGFC42V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 - 3.6


    Original     		PDF MGFC42V3436 MGFC42V3436 -45dBc 32dBm R1251 C 34 F

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC42V3436 3.4 – 3.6 GHz BAND / 16W OUTLINE DRAWING DESCRIPTION The MGFC42V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 – 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC42V3436 MGFC42V3436 -45dBc 32dBm

    C42V5964

    Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
    Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION


    Original     		PDF M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776

    MGF4937

    Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
    Text: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed


    Original     		PDF H-CX587-R KI-1311 MGF4937 MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1

    MGFS45H2201G

    Abstract: MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF1907A MGF4961 mgf4941al mitsubishi mgf
    Text: GaAs DEVICES GENERAL CATALOG MITSUBISHI GaAs solutions for communication networks in the information era. Multimedia Network 1 PRODUCTS 3 APPLICATION 7 PACKAGE 9 BS / CS PDC/GSM/CDMA Multimedia Network WiMAX Features We e provide provide a variety variety


    Original     		PDF H-CR587-J KI-0612 MGFS45H2201G MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF1907A MGF4961 mgf4941al mitsubishi mgf

    Untitled

    Abstract: No abstract text available
    Text: M ITSUBISHI SEM ICONDUCTO R <GaAs FET> MGFC42V3436 3.4 - 3.6GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC42V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 - 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic


    OCR Scan     		PDF MGFC42V3436 MGFC42V3436 -45dBc 32dBm

    4433 fet

    Abstract: DE-A10
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V3436 3.4 - 3.6GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC42V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 - 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic


    OCR Scan     		PDF MGFC42V3436 MGFC42V3436 -45dBc 32dBm 25deg 4433 fet DE-A10