MGFC42V778S Search Results

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V778S 7 .7 — 8 .5G H z BAND 16W INTERNALLY M ATCHED GaAs FET DESCRIPTION The M G F C 4 2 V 7 7 8 5 is an internally impedance-matched GaAs power F E T especially designed fo r use in 7 . 7 — 8 .5 GHz band amplifiers. The herm etically sealed metal-ceramic

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V778S 7 .7 —8.5GÜZ BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The M GFC42V7785 is an internally impedance-matched GaAs power F E T especially designed for use in 7 .7 - 8 .5 GHz band amplifiers. The hermetically sealed metal-ceramic

mgfc30

Abstract: MGFC39V5964A
Contextual Info: C BAND INTERNALLY MATCHED GaAs FET M GFCxxVxxxxx Series Typical Characteristics Type Freq. GHz PldB (dBm) GIp mi MGFC36V3742 3 .7 -4 .2 IMG FC36V3742A M GFC36V4460 MGFC36V4460A MGFC38VS258 MGFC36V6964 M G FC36V6964A MGFC36V6471 3 .7 -4 .2 ii 4 .4 -5 .0 10