042c1
Abstract: 2S090 SSP62 mrf486 2S0882 2sc2906 2S0898 042C3 B0329 THA13
Text: POWER SILICON NPN Item Number Part Number I C 5 10 20 TRM5504 TRM5504 TRM5504 TRM6014 TRM6014 TRM6014 TRM6504 TRM6504 -:-~~~g~: 25 30 35 40 45 50 TRM7014 TRM7014 TRM7504 TRM7504 TRM7504 TRL8014 TRL8014 TRL8014 2:;C;3001 2SC2906AK 2SC2906AM 2S0141 2S0141
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2SC643A
2SC1892
S01530
2S0898
TRM2014
TRM2504
TRM3014
TRM3504
TRM4014
042c1
2S090
SSP62
mrf486
2S0882
2sc2906
042C3
B0329
THA13
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2n6125
Abstract: No abstract text available
Text: Power Transistors TYPE POLA NO. RITY M AXIM UM RATINGS CASE Pd IC VCEO mW (A) (V) H FE VCE(sat) min max IT CO M P L E IC VCE max IC min MENTARY (mA) (V) (V) (A) (MHz) TYPE 0.5 0.2 0.2 1 0.5 2 2 2 2 2 0.8 0.5 0.5 0.8 0.8 2 0.5 0.5 2 2 30 50 50 5 30 MH8100
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MH8100
MH8106
MH8108
MH8700
MH0810
MH0816
MH0818
2n6125
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BC238 h parameter
Abstract: MH 0810C hFE Group 8100C ME8100 MH8100 MH0810 BC308 1I103 BC238
Text: MH 8100 MH 0810 COMPLEMENTARY EPITAXIAL TRANSISTORS FOR 3 - 5 W AF OUTPUT MICRO ELECTRONICS The MH8100 NPN , MH0810 (PNP) are complementary silicon planar epitaxial transistors designed fo r the output stages of 3 - 5 watt audio amplifiers. They are also suitable for
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MH8100
MH0810
O-220B
10rnS)
100-ohms
MH8100,
MH0810,
BC238,
BC338,
BC308,
BC238 h parameter
MH 0810C
hFE Group
8100C
ME8100
MH8100
MH0810
BC308
1I103
BC238
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MICRO ELECTRONICS ltd transistor
Abstract: No abstract text available
Text: CRO MH8100F NPN SILICON POWER TRANSISTOR DESCRIPTION MH8100F is NPN silicon planar epitaxial transistor designed for the output stages of 3-5W audio amplifiers. It is also suitable for switches up to 3A collector current. ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage VBE=0
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MH8100F
MH8100F
May-96
MICRO ELECTRONICS ltd transistor
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MH8100F
Abstract: No abstract text available
Text: MH8100F NPN SILICON POW ER TRANSISTOR D ESC RIPTIO N MH8100F is NPN silicon planar epitaxial transistor designed for the output stages of 3-5W audio amplifiers. It is also suitable for switches up to 3A collector current. ABSOLUTE M AXIM UM RATINGS Collector-Emitter Voltage V BE=0
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MH8100F
MH8100F
May-96
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BC238 h parameter
Abstract: 5v 3w audio amplifier 5.5w
Text: MH 8100 MH 0810 COMPLEMENTARY EPITAXIAL TRANSISTORS FOR 3-.5W AF OUTPUT IVIIGRO ELECTRONICS The MH8100 NPN , MH0810 (PNP) are complementary silicon planar epitaxial transistors designed fo r the output stages of 3 - 5 watt audio amplifiers. They are also suitable for
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MH8100
MH0810
O-220B
55KHz,
440mA
0I80HW*
00T8HH!
MH8100,
MH0810,
BC238,
BC238 h parameter
5v 3w audio amplifier
5.5w
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MH0810
Abstract: MH8100
Text: MH 8100 MH 0810 COMPLEMENTARY EPITAXIAL TRANSISTORS FOR 3-.5W AF OUTPUT IVIIGRO ELECTRONICS The MH8100 NPN , silicon planar epitaxial MH0810 (PNP) are complementary transistors designed for the output stages of 3 - 5 watt audio amplifiers. They are also suitable for
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MH8100
MH0810
2343Q181
MH0810
MH8100
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Untitled
Abstract: No abstract text available
Text: CRO MH8100F NPN SILICON POWER TRANSISTOR DESCRIPTION MH8100F is NPN silicon planar epitaxial transistor designed for the output stages of 3-5W audio amplifiers. It is also suitable for switches up to 3A collector current. ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage VBE=0
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MH8100F
MH8100F
300/xS,
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MH0810
Abstract: MH8100
Text: M MH 8100 MH 0810 COMPLEMENTARY EPITAXIAL TRANSISTORS FOR 3-.5W AF OUTPUT IVIICRO ELECTRONICS The MH8100 NPN , MH0810 (PNP) are complementary silicon planar epitaxial transistors designed for the output stages of 3—5 watt audio amplifiers. They are also suitable for
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MH8100
MH0810
O-220B
TA-25
box6m77
MH0810
MH8100
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2SA532
Abstract: BC109 BC184 BC549 BC317 2SC734 Y MS181A BC159 8 2SC876 TTP31A ML78M06A BC357
Text: ALPHANUMERIC INDEX TYPE NO. 057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N40Û3 1N4004 1N4005 1N4006 1N4007 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 1N5400 1N5401 IN5402 1N5403 1N5404 1N5405 1N5406 1N5407 1N5408 2021-1G 2023G
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057-2G
1611G
1620G
1621-2G
1623G
1641G
1N4001
1N4002
1N4004
1N4005
2SA532
BC109 BC184 BC549
BC317
2SC734 Y
MS181A
BC159 8
2SC876
TTP31A
ML78M06A
BC357
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2sc1061
Abstract: 2SC1626 2N6108
Text: Power Transistors TYPE POLA CASE NO. RITY U te min max Ic A V ce (V) max (V) fl COMPLE min MENTARY lc (A) (MHz) TYPE D45C12 MH0810 MH0816 MH0818 MH0870 P P P P P TO-220 TO-220 TO-220 TO-220 TO-220 30 12 10 10 30 4 3 1 1 4 80 30 60 80 50 20 40 40 40 40
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D45C12
MH0810
MH0816
MH0818
MH0870
MH8100
MH8106
MH8108
MH8500
MH8700
2sc1061
2SC1626
2N6108
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