MJD112 Search Results

1N5825

Abstract: 369D MJD112 MJD112G MJD117 MSD6100 TIP31 TIP32 MJD117-1G
Contextual Info: MJD112 NPN MJD117 (PNP) Complementary Darlington Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters,

1N5825

Abstract: MJD112 MJD117 MSD6100 TIP110 TIP117 MJD112-D TIP110-TIP117
Contextual Info: ON Semiconductort NPN MJD112* Complementary Darlington Power Transistors PNP MJD117* DPAK For Surface Mount Applications *ON Semiconductor Preferred Device Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters,

D112

Abstract: MJD112 D-PAK package
Contextual Info: SEMICONDUCTOR MJD112 MARKING SPECIFICATION DPAK PACKAGE 1. Marking method Laser Marking or Ink Marking 2. Marking K D112 016 No. Item Marking Description 1 KEC K KEC CORP. 2 Device Name D112 MJD112 3 hFE Grade 4 Lot No. 99.12.16 Revision No : Year 0 ~ 9 : 2000~2009

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components MJD112 Features • Silicon NPN epitaxial planer Transistors Lead Free Finish/RoHS Compliant "P" Suffix designates

MJD112

Abstract: DIODE T4 symbol NPN Silicon Power Transistor DPAK MJD117 TIP112 TIP117
Contextual Info: MJD112 MJD117 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ ■ ■ STMicroelectronics PREFERRED SALESTYPES LOW BASE-DRIVE REQUIREMENTS INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE SURFACE-MOUNTING TO-252 DPAK POWER PACKAGE IN TAPE & REEL

Contextual Info: SEMICONDUCTOR MJD112/L TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. A FEATURES I C J D High DC Current Gain. Low Collector-Emitter Saturation Voltage. K Q Straight Lead IPAK, "L" Suffix

Darlington Transistor TO251

Abstract: to-252-2
Contextual Info: MJD112 NPN TO-251/TO-525-2L Transistor TO-251 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features Complementary darlington power transistors dpak for surface mount applications MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter TO-252-2L Value

Contextual Info: MOTOROLA Order this document by MJD112/D SEMICONDUCTOR TECHNICAL DATA NPN M JD112* PNP Com plem entary Darlington Power Transistors M JD 117* DPAK For Surface Mount Applications ‘ M o t o r o la P r e fe r r e d D e v ic e Designed for general purpose power and switching such as output or driver stages

1N5825

Abstract: 369D MJD112 MJD112G MJD117 MSD6100 TIP31 TIP32 mjd1 5 amp npn darlington power transistors
Contextual Info: MJD112 NPN MJD117 (PNP) Preferred Device Complementary Darlington Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters,

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors TO-252-2L MJD112 TRANSISTOR NPN 1. BASE FEATURES y Complementary Darlington Power Transistors Dpak for Surface Mount Applications 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

369D

Abstract: j11x
Contextual Info: MJD112 NPN MJD117 (PNP) Preferred Device Complementary Darlington Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters,

Darlington Transistor TO251

Abstract: MJD112
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2 Plastic-Encapsulate Transistors TO-251 TO-252-2 MJD112 TRANSISTOR NPN 1. BASE FEATURES y Complementary darlington power transistors dpak for surface mount applications 2. COLLECTOR 3. EMITTER

Contextual Info: S i SGS-THOMSON HDoœiiLKerasiiüiDes MJD112 MJD117 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • SGS-THOMSON PREFERRED SALESTYPES . LOW BASE-DRIVE REQUIREMENTS . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE . SURFACE-MOUNTING TO-252 DPAK POWER PACKAGE IN TAPE & REEL

MJD112t4g

Abstract: TIP31 NPN Transistor diagram TIP32 applications TIP32 NPN Transistor MJD112RL NPN Silicon Power Transistor DPAK 369D MJD112 MJD112T4 MJD117
Contextual Info: MJD112 NPN MJD117 (PNP) Preferred Device Complementary Darlington Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters,

Contextual Info: TO-251/TO-252-2Plastic-Encapsulate Transistors 6. 5 0¡ À 0. 10 1. FEATURES Power dissipation PCM: 0. 5 1¡ À 0 . 03 À. 10 5. 50¡ 0 5¡ ã BASE 5¡ ã 5¡ ã 0. 80¡ À 0. 0 5 7. 70 TRANSISTOR NPN 2 . 30¡ À 0. 05 5. 3 0¡ À 0. 05 14. 70 MJD112 TO-251

TIP31 NPN Transistor diagram

Abstract: MJD117 MSD6100 TIP31 TIP32 1N5825 369D MJD112 MJD112G TIP31 FOOTPRINT
Contextual Info: MJD112 NPN MJD117 (PNP) Complementary Darlington Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters,

equivalent transistor K 3562

Abstract: 724 motorola NPN Transistor with heat pad MJE340 MOTOROLA 2N3055 BU108 transistor bd136 in dpak packaging 2sc15 724 motorola NPN Transistor with collector heat pad 2SD436 BU326
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD112* PNP MJD117* Complementary Darlington Power Transistors DPAK For Surface Mount Applications *Motorola Preferred Device Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers.

MJD117T4G

Contextual Info: MJD112, MJD112T4G NPN , MJD117, NJVMJD117T4G (PNP) Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters,

Contextual Info: MJD112 NPN , MJD117 (PNP) Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers.

Contextual Info: MJD112 MJD112 D-PACK for Surface Mount Applications • • • • • High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications No Suffix Straight Lead (I. PACK, “ - I “ Suffix) Electrically Similar to Popular TIP112

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MJD112 Features • Silicon NPN epitaxial planer Transistors Lead Free Finish/RoHS Compliant "P" Suffix designates

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MJD112 Features • • Halogen free available upon request by adding suffix "-HF" Lead Free Finish/RoHS Compliant "P" Suffix designates

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS MJD112 NPN MJD117 PNP DPAK TO-252 Plastic Package Designed for General Purpose Power and Switching Applications

kec semiconductor marking

Abstract: D112L MJD112L MARKING KEC
Contextual Info: SEMICONDUCTOR MJD112L MARKING SPECIFICATION IPAK PACKAGE 1. Marking method Laser Marking or Ink Marking 2. Marking K D112L 016 No. Item Marking Description 1 KEC K KEC CORP. 2 Device Name D112L MJD112L 3 hFE Grade 4 Lot No. 99.12.16 Revision No : Year 0 ~ 9 : 2000~2009