MM54HCT193 Search Results

74HCT

Abstract: MM74HCT193 pj 66 diode cmos divide-by-n
Contextual Info: & January 1988 Semiconductor MM54HCT193/MM74HCT193 Synchronous Binary Up/Down Counters General Description These high speed synchronous counters utilize advanced silicon-gate CM OS te ch n olo gy to achieve the high noise im ­ m unity and low pow er consum ption o f CM OS technology,

Contextual Info: January 1988 Semiconductor MM54HCT193/MM74HCT193 Synchronous Binary Up/Down Counters General Description T hese high speed synchronous counters utilize advanced silicon-gate C M OS te ch n olo gy to achieve th e high noise im ­ m unity and low pow e r consum ption o f C M OS technology,

T193

Contextual Info: January 1988 Semiconductor & MM54HCT193/MM74HCT193 Synchronous Binary Up/Down Counters General Description T hese high speed synchronous counters utilize advanced silicon-gate C M OS te ch n olo gy to achieve th e high noise im ­ m unity and low pow e r consum ption o f C M OS technology,

74HC

Abstract: 74HCT C1995 MM54HCT193 MM74HCT193
Contextual Info: MM54HCT193 MM74HCT193 Synchronous Binary Up Down Counters General Description These high speed synchronous counters utilize advanced silicon-gate CMOS technology to achieve the high noise immunity and low power consumption of CMOS technology along with the speeds of low power Schottky TTL The

Contextual Info: National Semiconductor CO A PRELIMINARY T mlcroCMOS MM54HCT193/MM74HCT193 Synchronous Binary Up/Down Counters General Description These high speed synchronous counters utilize mtcroCMOS technology, 3.0 micron silicon gate N-well CMOS to achieve the high notse immunity and low power consumption of

Contextual Info: MM54HCT193/MM74HCT193 Synchronous Binary Up/Down Counters General Description These high speed synchronous counters utilize advanced silicon-gate CMOS technology to achieve the high noise im­ munity and low power consumption of CMOS technology, along with the speeds of low power Schottky TTL. The