MM54HCT273 Search Results

QD03

Abstract: 74HCT MM54HCT273 MM54HCT273J MM74HCT273
Contextual Info: . January 1988 MM54HCT273/MM74HCT273 Octal D Flip-Flop with Clear General Description The M M 54H C T273/M M 74H C T 273 utilizes advanced sili­ con-gate CM OS technology. It has an input threshold and o utput drive sim ilar to LS-TTL w ith th e low standby pow e r of

Contextual Info: MM54HCT273/MM74HCT273 Octal D Flip-Flop with Clear General Description The MM54HCT273/MM74HCT273 utilizes advanced sili­ con-gate CMOS technology. It has an input threshold and output drive similar to LS-TTL with the low standby power of CMOS. These positive edge-triggered flip-flops have a common

Contextual Info: National mmSemiconductor PRELIMINARY MM54HCT273/MM74HCT273 Octal D Flip-Flop with Clear General Description The MM54HCT273/MM74HCT273 utilizes 3.0 micron N-well microCMOS technology. It has an input threshold and output drive similar to LS-TTL with the low standby

74HCT Characteristics

Abstract: 74HCT C1995 MM54HCT273 MM54HCT273J MM74HCT273 MM74HCT273J
Contextual Info: MM54HCT273 MM74HCT273 Octal D Flip-Flop with Clear General Description The MM54HCT273 MM74HCT273 utilizes advanced silicon-gate CMOS technology It has an input threshold and output drive similar to LS-TTL with the low standby power of CMOS These positive edge-triggered flip-flops have a common