MMBF4416 Search Results

MMBF4416LT1

Contextual Info: ON Semiconductort JFET VHF/UHF Amplifier Transistor MMBF4416LT1 N–Channel ON Semiconductor Preferred Device MAXIMUM RATINGS 3 Rating Symbol Value Unit Drain–Source Voltage VDS 30 Vdc Drain–Gate Voltage VDG 30 Vdc Gate–Source Voltage VGS 30 Vdc IG 10

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF Am plifier Transistor N-Channel MMBF4416LT1 M otorola Preferred Device 2 SOURCE 1 DRAIN MAXIMUM RATINGS Symbol Value Unit D ra in -S o u rc e Voltage VdS 30 V dc D ra in -G a te Voltage Vd G 30 V dc G a te -S o u rc e Voltage

Contextual Info: MMBF4416LT1 Preferred Device JFET VHF/UHF Amplifier Transistor N−Channel http://onsemi.com Features • Pb−Free Package is Available 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDS 30 Vdc Drain−Gate Voltage VDG 30 Vdc Gate−Source Voltage

MMBF4416A

Contextual Info: MMBF4416A MMBF4416A N-Channel RF Amplifier G • This device is designed for RF amplifiers. • Sourced from process 50. S D SOT-23 Mark: 6BG Absolute Maximum Ratings * TA=25°C unless otherwise noted Symbol VDG Drain-Gate Voltage Parameter Value 35 Units

MMBF4416

Contextual Info: MMBF4416 MMBF4416 N-Channel RF Amplifiers G • This device is designed for RF amplifiers. • Sourced from process 50. S D SOT-23 Mark: 6A Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol VDG Drain-Gate Voltage Parameter Value 30 Units V VGS

MMBF4416

Abstract: FAIRCHILD SOT-23 MARK 30 RF Amplifiers rf fairchild transistor 100mhz rf fairchild transistor 100mhz amplifier
Contextual Info: MMBF4416 N-Channel RF Amplifiers • This device is designed for RF amplifiers. • Sourced from process 50. G S SOT-23 D Mark: 6A Absolute Maximum Ratings T =25°C unless otherwise noted A Symbol Parameter Value Units VDG Drain-Gate Voltage 30 V VGS Gate-Source Voltage

Contextual Info: MMBF4416LT1* M A X IM U M RATINGS Rating Symbol Value D ra in-Source V oltage Vos 30 V dc Drain-Gate V oltage VOG 30 Vdc G a te-Source V oltage VGS 30 Vdc Ig 10 m Adc Gate Current CASE 318-07, STYLE 10 SOT-23 TO-236AB Unit 3 Jp vP 1 Gat 2 T H E R M A L CH ARACTERISTICS

s11s

Abstract: marking GFG
Contextual Info: ON Semiconductort JFET VHF/UHF Amplifier Transistor MMBF4416LT1 N–Channel ON Semiconductor Preferred Device MAXIMUM RATINGS 3 Rating Symbol Value Unit Drain–Source Voltage VDS 30 Vdc Drain–Gate Voltage VDG 30 Vdc Gate–Source Voltage VGS 30 Vdc IG 10

MMBF4416A

Contextual Info: MMBF4416A N-Channel RF Amplifier • This device is designed for RF amplifiers. • Sourced from process 50. G S D Absolute Maximum Ratings* Symbol SOT-23 Mark: 6BG Ta = 25°C unless otherwise noted Parameter Value Units VDG Drain-Gate Voltage 35 V VGS Gate-Source Voltage

MMBF4416LT1

Abstract: ON932 ON732 marking gfg 6f
Contextual Info: MOTOROLA Order this document by MMBF4416LT1/D SEMICONDUCTOR TECHNICAL DATA JFET MMBF4416LT1 VHF/UHF Amplifier Transistor N–Channel Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain–Source Voltage VDS

Contextual Info: ON Semiconductort JFET VHF/UHF Amplifier Transistor MMBF4416LT1 N−Channel ON Semiconductor Preferred Device MAXIMUM RATINGS 3 Rating Symbol Value Unit Drain−Source Voltage VDS 30 Vdc Drain−Gate Voltage VDG 30 Vdc Gate−Source Voltage VGS 30 Vdc IG 10

Contextual Info: MMBF4416LT1 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)30 V(BR)GSS (V)30 I(D) Max. (A) I(G) Max. (A)10m Absolute Max. Power Diss. (W)225m’ Maximum Operating Temp (øC)150õ I(GSS) Max. (A)1.0n @V(GS) (V) (Test Condition)20 V(GS)off Min. (V)

BF441

Contextual Info: MMBF4416LT1* M AXIM UM RATINGS Rating Symbol Value D rain-Source Voltage V DS 30 Vdc Drain-G ate Voltage V DG 30 Vdc G ate-Source Voltage VG S 30 Vdc 'G 10 m Adc Gate Current CASE 318-07, STYLE 10 SOT-23 TO-236AB U nit ¿ s o u rc e G ate ~ ^ ) TH ERM A L CH A RA C TERISTICS

BC237

Abstract: S11S C4 SOT-323
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET MMBF4416LT1 VHF/UHF Amplifier Transistor N–Channel Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain–Source Voltage VDS 30 Vdc Drain–Gate Voltage VDG 30 Vdc

BF441

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JF ET VH F/UHF Am plifier T ran sistor N-Channel MMBF4416LT1 M otorola Preferred Device 2 SOURCE % 1 DRAIN MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain-Source Voltage VDS 30 Vdc Draln-Gate Voltage vdg 30 Vdc Gate-Source Voltage

MMBF4416A

Contextual Info: MMBF4416A MMBF4416A N-Channel RF Amplifier G • This device is designed for RF amplifiers. • Sourced from process 50. S D SOT-23 Mark: 6BG Absolute Maximum Ratings * TA=25°C unless otherwise noted Symbol VDG Drain-Gate Voltage Parameter Value 35 Units

MMBF4416

Contextual Info: MMBF4416 MMBF4416 N-Channel RF Amplifiers G • This device is designed for RF amplifiers. • Sourced from process 50. S D SOT-23 Mark: 6A Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol VDG Drain-Gate Voltage Parameter Value 30 Units V VGS

MMBF4416

Contextual Info: MMBF4416 MMBF4416 N-Channel RF Amplifiers G • This device is designed for RF amplifiers. • Sourced from process 50. S D SOT-23 Mark: 6A Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol VDG Drain-Gate Voltage Parameter Value 30 Units V VGS

Contextual Info: MMBF4416 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)30 V(BR)GSS (V)30 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)225m Maximum Operating Temp (øC)150õ I(GSS) Max. (A)1.0n @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)

MMBF4416LT1

Contextual Info: ON Semiconductort JFET VHF/UHF Amplifier Transistor MMBF4416LT1 N–Channel ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 30 Vdc Drain–Gate Voltage VDG 30 Vdc Gate–Source Voltage VGS 30 Vdc IG 10

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

2N5459

Abstract: 2N5485 mpf102 KSK161 mpf102 equivalent J107 diode J113 equivalent J201 N-channel JFET transistor j210 2N5485 MMBFJ177
Contextual Info: Discrete JFETs Products PD VGS off BVGDS Power (V) Dissipation Min (V) Typ (V) Max (V) (mW) IDSS GFS @ ID (uA) @ VDS (V) Min (mA) Max (mA) @ VDS (V) Min (mS) Typ (mS) Max (mS) RDS (Ohm) ID (off) (uA) SOT-223 N-Channel JFTJ105 25 1000 4.5 - 10 1 5 500 - 15

LTVW

Abstract: BPW21 application note BPW21 SFH213FA Amplifier c4 F3141 si quad PHOTodiode G02A LT1880 Q581
Contextual Info: LT1880 SOT-23, Rail-to-Rail Output, Picoamp Input Current Precision Op Amp U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LT 1880 op amp brings high accuracy input performance and rail-to-rail output swing to the SOT-23 package. Input offset voltage is trimmed to less than 150µV and

Contextual Info: LT1880 SOT-23, Rail-to-Rail Output, Picoamp Input Current Precision Op Amp DESCRIPTION FEATURES n n n n n n n n n n n The LT 1880 op amp brings high accuracy input performance and rail-to-rail output swing to the SOT-23 package. Input offset voltage is trimmed to less than 150 V and