MMBFJ175 Search Results

MMBFJ175LT1

Abstract: MMBF175
Contextual Info: ON Semiconductort JFET Chopper MMBFJ175LT1 P–Channel – Depletion ON Semiconductor Preferred Device 3 MAXIMUM RATINGS 1 Rating Symbol Drain–Gate Voltage Reverse Gate–Source Voltage Value Unit VDG 25 V VGS r –25 V 2 CASE 318–08, STYLE 10 SOT–23 (TO–236AB)

Contextual Info: J174 / J175 / J176 / J177 / MMBFJ175 / 176 / 177 MMBFJ175 MMBFJ176 MMBFJ177 J174 J175 J176 J177 G S S G TO-92 D SOT-23 D Mark: 6W / 6X / 6Y NOTE: Source & Drain are interchangeable P-Channel Switch This device is designed for low level analog switching sample and hold

J174

Abstract: j177 J176 j175 mark 6y semiconductor j175 J177 J176 J175
Contextual Info: ÏV1:0 C^N >3ä.:>rr. T O R J174 J175 J176 J177 MMBFJ175 MMBFJ176 MMBFJ177 Mark: 6W / 6X / 6Y P-Channel Switch This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 88. Absolute Maximum Ratings"

MMBFJ175LT1

Contextual Info: MOTOROLA Order this document by MMBFJ175LT1/D SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Symbol Value Unit VDG 25 V VGS r – 25 V Symbol Max

MMBFJ176 on semiconductor

Abstract: J175 MMBFJ176 6x marking sot-23 p-channel
Contextual Info: J175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177 P-Channel Switch Description This device is designed for low-level analog switching sample-and-hold circuits and chopper-stabilized amplifiers. Sourced from process 88. G S SOT-23 D Mark: 6W / 6X / 6Y TO-92 DG S

j175

Abstract: J176 J174 J177 j174-j177 MMBFJ177
Contextual Info: F A iW D iscrete PO W ER & S ig n a l Technologies P N IU S E M C D N O U C 3 T Q H •; J174 J175 J176 J177 MMBFJ175 MMBFJ176 MMBFJ177 P-Channel Switch This device is designed for low level analog switching sam ple and hold circuits and chopper stabilized amplifiers. Sourced from Process 88.

Contextual Info: MMBFJ175 Transistors P-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)30 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)350m Maximum Operating Temp (øC)150þ I(GSS) Max. (A)1n @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)

MMBFJ177

Contextual Info: J174 / J175 / J176 / J177 / MMBFJ175 / MMBFJ176 / MMBFJ177 Discrete POWER & Signal Technologies National S e m i c o n d u c to r " MMBFJ175 MMBFJ176 MMBFJ177 J174 J175 J176 J177 # SOT-23 M a rk : v S 6W / 6 X / 6 Y P-Channel Switch This device is designed for low level analog switching sam ple and hold

EQUIVALENT FOR J175

Abstract: EQUIVALENT FOR J174 j174 EQUIVALENT J174 J177 equivalent J175 EQUIVALENT FOR J176 J176 J177 MMBFJ177
Contextual Info: MMBFJ175 MMBFJ176 MMBFJ177 J174 J175 J176 J177 G D G S TO-92 SOT-23 D S Mark: 6W / 6X / 6Y P-Channel Switch This device is designed for low level analog switching sample and hold circuits and chopper stabalized amplifiers. Sourced from Process 88. Absolute Maximum Ratings*

SSs sot23

Contextual Info: MMBFJ175LT1* CASE 318-07, STYLE 10 SOT-23 TO-236AB MAXIMUM RATINGS Rating Drain-Gate Voltage Reverse Gate-Source Voltage Symbol Value Vd G 25 Unit V v GS{r) - 25 V Symbol Max Unit PD 225 mW 1.8 mW/°C R»j a 556 X /W T j. Tsta - 55 to + 150 X THERMAL CHARACTERISTICS

6W SOT23-3

Abstract: MMBFJ175LT1 MMBFJ175LT1G
Contextual Info: MMBFJ175LT1 Preferred Device JFET Chopper P−Channel − Depletion Features • Pb−Free Package is Available http://onsemi.com 2 SOURCE MAXIMUM RATINGS Rating Drain−Gate Voltage Reverse Gate−Source Voltage Symbol Value Unit VDG 25 V VGS r −25 V Symbol

Contextual Info: ON Semiconductort JFET Chopper MMBFJ175LT1 P−Channel − Depletion ON Semiconductor Preferred Device 3 MAXIMUM RATINGS 1 Rating Symbol Drain −Gate Voltage Value Unit VDG 25 V VGS r −25 V Symbol Max Unit Total Device Dissipation FR− 5 Board(1) TA = 25°C

Contextual Info: MMBFJ175LT1 Transistors P-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)30 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)225m’ Maximum Operating Temp (øC)150õ I(GSS) Max. (A)1.0n @V(GS) (V) (Test Condition)20 V(GS)off Min. (V)3.0

J175

Abstract: MMBFJ177 MMBFJ176 J177 TO-92 J176 J174 J177 MMBFJ175 process 88 J177. P-CHANNEL. TO-92
Contextual Info: J174 1J175 / J176 1J177 1 MMBFJ1751MMBFJ1761MMBFJ177 Discrete POW ER & Signal Technologies National S e m i c o n d u c t o r " MMBFJ175 MMBFJ176 MMBFJ177 J174 J175 J176 J177 SOT-23 M a rk : 6 W / 6 X / 6 Y P-Channel Switch This device is designed for low level analog switching sample and hold

Contextual Info: MMBFJ175LT1G JFET Chopper P−Channel − Depletion Features • S Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Contextual Info: MMBFJ175LT1* CASE 318-07, STYLE 10 SOT-23 TO-236AB M A X IM U M RATINGS Rating Drain-Gate Voltage Reverse Gate-Source Voltage Symbol Value Unit Vd G 25 V v GS(r) -2 5 V Symbol Max Unit PD 225 mW 1.8 mW/°C R0JA 556 °C/W T j' Tsta -5 5 to +150 °C THERM AL CHARACTERISTICS

BC237

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Symbol Value Unit VDG 25 V VGS r

na174

Abstract: MMBFJ177
Contextual Info: J174 / J175 / J176 / J177 / MMBFJ175 / 176 / 177 MMBFJ175 MMBFJ176 MMBFJ177 J174 J175 J176 J177 G S S G TO-92 D SOT-23 D Mark: 6W / 6X / 6Y NOTE: Source & Drain are interchangeable P-Channel Switch This device is designed for low level analog switching sample and hold

Contextual Info: J174 / J175 / J176 / J177 MMBFJ175 / MMBFJ176 / MMBFJ177 P-Channel Switch Description This device is designed for low-level analog switching sample-and-hold circuits and chopper-stabilized amplifiers. Sourced from process 88. J174 / 175 / 176 / 177 1 MMBFJ175 / 176 / 177

j174 transistor

Abstract: J175 J174 J176 J177 MMBFJ175 MMBFJ176 MMBFJ177 J175 transistor transistor j175
Contextual Info: J174 / J175 / J176 / J177 / MMBFJ175 / 176 / 177 MMBFJ175 MMBFJ176 MMBFJ177 J174 J175 J176 J177 G S S G TO-92 D SOT-23 D Mark: 6W / 6X / 6Y NOTE: Source & Drain are interchangeable P-Channel Switch This device is designed for low level analog switching sample and hold

MMBFJ175LT1

Abstract: MMBF175
Contextual Info: ON Semiconductort JFET Chopper MMBFJ175LT1 P–Channel — Depletion ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 V VGS r –25 V 3 1 2 THERMAL CHARACTERISTICS Characteristic

6W MARKING CODE SOT23

Abstract: MMBFJ175LT1 MMBFJ175LT1G 6w sot23
Contextual Info: MMBFJ175LT1 Preferred Device JFET Chopper P-Channel - Depletion Features •ăPb-Free Package is Available http://onsemi.com 2 SOURCE MAXIMUM RATINGS Rating Drain-Gate Voltage Reverse Gate-Source Voltage Symbol Value Unit VDG 25 V VGS r -25 V Symbol Max Unit

J177

Abstract: J175 mmbfj176 MMBFJ176 on semiconductor MMBFJ177
Contextual Info: s e M I O O N C U C T Q R «* J174 J175 J176 J177 MMBFJ175 MMBFJ176 MMBFJ177 G1 Mark: 6W /6X/6Y P-Channel Switch This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 88. Absolute Maximum RatinQS

j177 TRANSISTOR

Abstract: J176 J176. P-CHANNEL. TO-92 J174 J175 J177 MMBFJ175 MMBFJ176 MMBFJ177 J177 TO-92
Contextual Info: J174 / J175 / J176 / J177 / MMBFJ175 / 176 / 177 MMBFJ175 MMBFJ176 MMBFJ177 J174 J175 J176 J177 G S S G TO-92 D SOT-23 D Mark: 6W / 6X / 6Y NOTE: Source & Drain are interchangeable P-Channel Switch This device is designed for low level analog switching sample and hold