MMBT3640 Search Results

MMBT3640LT1

Contextual Info: ON Semiconductort Switching Transistor MMBT3640LT1 PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –12 Vdc Collector–Base Voltage VCBO –12 Vdc Emitter–Base Voltage VEBO –4.0 Vdc IC –80 mAdc Symbol Max Unit

Contextual Info: SMD High Speed Saturated Switching Transistors toff @ IC Part No. MMBT3640 20070515 Polarity PNP VCEO ton Min. Max. Max. IC V (ns) (ns) (mA) 12 25 35 50 hFE @ IC Min. 30 SMD Bipolar Transistors VCE(sat) @ IC & IB IC Max IC (mA) (V) (mA) 10 0.2 10 IB fT Min.

Contextual Info: SHD431002 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 646, REV. A PNP SWITCHING TRANSISTOR SHD431002S - S-100 JANTX Screening • Hermetic, Ceramic Package • Electrically Equivalent to MMBT3640 • Surface Mount Package Absolute Maximum Ratings*

H R C M F 2J 225

Contextual Info: / D iscrete POWER & S ign al Technologies S E M IC O N D U C T O R • PN3640 MMBT3640 SOT-23 B Mark: 2J PNP Switching Transistor This device is designed for very high speed saturate switching at collector currents to 100 m A. S ourced from Process 65. S e e

MMBT3640LT1

Abstract: mmbt3640l
Contextual Info: ON Semiconductort Switching Transistor MMBT3640LT1 PNP Silicon 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –12 Vdc Collector–Base Voltage VCBO –12 Vdc Emitter–Base Voltage VEBO –4.0 Vdc IC –80 mAdc Symbol Max Unit

Contextual Info: ON Semiconductort Switching Transistor MMBT3640LT1 PNP Silicon 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –12 Vdc Collector–Base Voltage VCBO –12 Vdc Emitter–Base Voltage VEBO –4.0 Vdc IC –80 mAdc Collector Current — Continuous

MMBT3640LT1

Contextual Info: MOTOROLA Order this document by MMBT3640LT1/D SEMICONDUCTOR TECHNICAL DATA Switching Transistor MMBT3640LT1 COLLECTOR 3 PNP Silicon Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS 3 1 Rating Symbol Value Unit Collector – Emitter Voltage VCEO –12

Contextual Info: MAXIMUM RATINGS Rating Symbol Value Unit C o lle cior-E m itter Voltage VCEO -1 2 Vdc Collector-Base Voltage VCBO • 12 Vdc v EBO -4 .0 Vdc 'c -8 0 m Adc Em itter-Base Voltage C ollector C urrent — C ontinuous MMBT3640LT1* CASE 318-07, STYLE 6 SOT-23 TO-236AB

process 65

Abstract: MMBT3640 PN3640 PN4258
Contextual Info: ss ss M-cr: c ì i m u i . - r r r o r? PN3640 MMBT3640 PNP Switching Transistor This device is designed for very high speed saturate switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics. Absolute Maximum RdtlflQ S

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Sw itching Transistor MMBT3640LT1 PNP Silicon Motorola Preferred Device M AXIMUM RATINGS Rating Symbol Value Unit C ollector-E m itter Voltage VCEO -1 2 Vdc C ollector-B ase Voltage VCBO -1 2 Vdc E m itte r- Base Voltage

MMBT3640

Abstract: PN3640 CBVK741B019 F63TNR PN2222N PN4258
Contextual Info: PN3640 / MMBT3640 PN3640 MMBT3640 C E C B TO-92 B SOT-23 E Mark: 2J PNP Switching Transistor This device is designed for very high speed saturated switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics. Absolute Maximum Ratings*

TRANSISTOR C 557 B

Abstract: MMBT3640 PN3640 PN4258
Contextual Info: S e m i c o n d u c t o r ' “ PN3640 MMBT3640 PN3640 / MMBT3640 & Discrete POW ER & Signal Technologies National SOT-23 Mark: 2J PNP Switching Transistor This device is designed for very high speed saturate switching at collector currents to 100 mA. Sourced from Process 65. S e e

MMBT5571-2

Contextual Info: This Surface Mount Devices NATL Surface Mount Transistors Typo No. Case Style VcES* Ices* VCE SAT VCEO Vebo hFE lc & VCE VcBO 'CBOg Vcb (V) (V) (V) (nA) (V) Min Max (mA) (V) (V) Min Min Max Min Max TO-236 (49) 6 6 4 50* 3 30 20 Its MMBT3640 TO-236 (49)

MMBT3640LT1

Abstract: MMBT3640L
Contextual Info: LESHAN RADIO COMPANY, LTD. Switching Transistor PNP Silicon 3 COLLECTOR MMBT3640LT1 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector–Emitter Voltage V CEO –12 Vdc Collector–Base Voltage V CBO –12 Vdc Emitter–Base Voltage

PN3640

Abstract: MMBT3640 PN4258
Contextual Info: N PN3640 MMBT3640 C E C B TO-92 SOT-23 E B Mark: 2J PNP Switching Transistor This device is designed for very high speed saturate switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics. Absolute Maximum Ratings*

Contextual Info: Switching Transistor PNP Silicon 3 COLLECTOR MMBT3640LT1 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector–Emitter Voltage V CEO –12 Vdc Collector–Base Voltage V CBO –12 Vdc Emitter–Base Voltage V –4.0 Vdc –80 mAdc Collector Current — Continuous

PN3640

Abstract: MMBT3640 PN4258
Contextual Info: PN3640 MMBT3640 C E C B TO-92 SOT-23 E B Mark: 2J PNP Switching Transistor This device is designed for very high speed saturate switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics. Absolute Maximum Ratings* Symbol

Contextual Info: PN3640 / MMBT3640 PN3640 MMBT3640 C E C B TO-92 B SOT-23 E Mark: 2J PNP Switching Transistor This device is designed for very high speed saturated switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics. Absolute Maximum Ratings*

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Transistor MMBT3640LT1 COLLECTOR 3 PNP Silicon Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS 3 1 Rating Symbol Value Unit Collector – Emitter Voltage VCEO –12 Vdc Collector – Base Voltage VCBO

Contextual Info: MAXIMUM RATINGS Symbol Value Unit C o lle cto r-E m itte r V o ltage v CEO -1 2 Vdc Collector-Base Voltage VCBO -1 2 Vdc Em itter-Base V o ltage v EBO - 4.0 Vdc ic -8 0 m A dc Rating C o lle cto r C u rrent — C o ntinuous MMBT3640LT1* CASE 318-07, STYLE 6

PN3640

Contextual Info: PN3640 / MMBT3640 PN3640 MMBT3640 C E C B TO-92 B SOT-23 E Mark: 2J PNP Switching Transistor This device is designed for very high speed saturated switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics. Absolute Maximum Ratings*

CBVK741B019

Abstract: F63TNR MMBT3640 PN2222N PN3640 PN4258
Contextual Info: PN3640 / MMBT3640 PN3640 MMBT3640 C E C B TO-92 B SOT-23 E Mark: 2J PNP Switching Transistor This device is designed for very high speed saturated switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics. Absolute Maximum Ratings*

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Sw itch in g Transistor MMBT3640LT1 PNP Silicon Motorola Preferred Device M AXIM U M R ATING S Rating Symbol Value Unit Collector-Emitter Voltage VCEO -1 2 Vdc C ollecto r-B ase Voltage v CBO -1 2 Vdc Em itter-Base Voltage

PN3640

Contextual Info: u c to r PN3640 MMBT3640 PN3640 / MMBT3640 D iscrete POW ER & S ig n a l Technologies E C TO-92 SOT-23 BE B Mark: 2J PNP Switching Transistor T h is d e v ic e is d es ig n e d fo r v e ry high s p e e d satu ra te sw itching at co lle c to r cu rre n ts to 1 0 0 m A . S o u rc e d fro m P ro c e s s 6 5 . S e e