MMBT3904G Search Results

Contextual Info: Zowie Technology Corporation General Purpose Transistor NPN Silicon Halogen-free type Lead free product COLLECTOR 3 3 BASE 1 1 MMBT3904GH 2 2 EMITTER SOT-23 MAXIMUM RATINGS Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO

1N916

Abstract: MMBT3904 MMBT3904G transistor sot23 1am MMBT3904-1AM transistor marking 1am
Contextual Info: Zowie Technology Corporation General Purpose Transistor NPN Silicon Lead free product COLLECTOR 3 3 BASE 1 1 MMBT3904G 2 2 EMITTER SOT-23 MAXIMUM RATINGS Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage

MMBT3904G-AE3-R

Abstract: MMBT3904G-AL3-R MMBT3904L-AE3-R MMBT3904 MMBT3904-AE3-R MMBT3904-AL3-R MMBT3904G MMBT3904L MMBT3904L-AL3-R MMBT3906
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT3904 NPN SILICON TRANSISTOR GENERAL PURPOSE APPLIATION „ FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD MAX =350mW * Complementary to UTC MMBT3906 Lead-free: MMBT3904L Halogen-free: MMBT3904G

MMBT3904-AE3-R

Abstract: MMBT3904G MMBT3904 MMBT3904-AL3-R MMBT3904G-AE3-R MMBT3904G-AL3-R MMBT3904L MMBT3904L-AE3-R MMBT3904L-AL3-R MMBT3906
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT3904 NPN SILICON TRANSISTOR GENERAL PURPOSE APPLIATION „ FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD MAX =350mW * Complementary to UTC MMBT3906 Lead-free: MMBT3904L Halogen-free: MMBT3904G

Contextual Info: Zowie Technology Corporation General Purpose Transistor NPN Silicon Lead free product COLLECTOR 3 3 BASE 1 1 MMBT3904G 2 2 EMITTER SOT-23 MAXIMUM RATINGS Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage

MMBT3904GH

Abstract: 1N916
Contextual Info: Zowie Technology Corporation General Purpose Transistor NPN Silicon Halogen-free type Lead free product COLLECTOR 3 3 BASE 1 1 MMBT3904GH 2 2 EMITTER SOT-23 MAXIMUM RATINGS Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO

Contextual Info: General Purpose Transistor NPN MMBT3904-G (RoHS Device) NPN Silicon Type Features Epitaxial Planar Die Construction Complementary PNP Type Available (MMBT3906-G) Ideal for Medium Power Amplification and switching SOT-23 .122 (3.1) .110 (2.8) Circuit Schematic

TRANSISTOR SMD MARKING CODE p1

Abstract: TRANSISTOR SMD MARKING CODE 2A A O TRANSISTOR SMD MARKING CODE Transistor 03 smd smd transistor MARKING 2A smd transistor code 2a TRANSISTOR SMD MARKING CODE MARKING SMD TRANSISTOR W1 TRANSISTOR SMD MARKING M Y 2A transistor smd SOT-23
Contextual Info: General Purpose Transistor SMD Diodes Specialist MMBT3906-G PNP RoHS Device Features SOT-23 -Epitaxial planar die construction 0.119 (3.00) 0.110 (2.80) -As complementary type, the NPN 3 transistor MMBT3904-G is recommended 0.056 (1.40) 0.047 (1.20) 1 2

1am marking sot-23

Abstract: 1AM marking transistor
Contextual Info: General Purpose Transistor MMBT3904-G NPN RoHS Device Features SOT-23 -Epitaxial planar die construction 0.120 (3.04) 0.110 (2.80) -As complementary type, the PNP 3 transistor MMBT3904-G is recommended 0.055 (1.40) 0.047 (1.20) 1 0.080 (2.04) 0.070 (1.78)

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE APPLIATION  FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD MAX =350mW * Complementary to UTC MMBT3906  ORDERING INFORMATION Ordering Number

MMBT3906-G

Contextual Info: General Purpose Transistor MMBT3906-G PNP RoHS Device Features SOT-23 -Epitaxial planar die construction 0.119 (3.00) 0.110 (2.80) -As complementary type, the NPN 3 transistor MMBT3904-G is recommended 0.056 (1.40) 0.047 (1.20) 1 Collector 3 2 0.079 (2.00)

1AM transistor

Contextual Info: General Purpose Transistor MMBT3904-G NPN RoHS Device Features SOT-23 -Epitaxial planar die construction 0.118(3.00) 0.110(2.80) -As complementary type, the PNP 3 transistor MMBT3904-G is recommended 0.055(1.40) 0.047(1.20) 1 2 0.079(2.00) Collector 3 0.006(0.15)

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE APPLIATION „ FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD MAX =350mW * Complementary to UTC MMBT3906 „ ORDERING INFORMATION Ordering Number

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE APPLIATION „ FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD MAX =350mW * Complementary to UTC MMBT3906 „ ORDERING INFORMATION Ordering Number

TRANSISTOR SMD MARKING CODE 1AM

Abstract: smd transistor 1AM smd 1AM SMD TRANSISTOR MARKING 1am 1am smd 1am smd transistor SMD MARKING CODE 1am SMD 1am Transistor marking code SS SOT23 transistor transistor 1am
Contextual Info: General Purpose Transistor SMD Diodes Specialist MMBT3904-G NPN RoHS Device Features -Epitaxial planar die construction SOT-23 -As complementary type, the PNP 0.118(3.00) 0.110(2.80) transistor MMBT3904-G is recommended 3 0.055(1.40) 0.047(1.20) 1 2 0.006(0.15)

2N3904 1AM

Abstract: MARKING 1AM 1AM marking transistor mmbt3904 vishay transistor marking 1am MMBT3904 1am TRANSISTOR marking code vishay 2N3904 SOT-23
Contextual Info: MMBT3904 VISHAY Vishay Semiconductors Small Signal Transistor NPN Features • NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. • As complementary type, the PNP transistor MMBT3906 is recommended. • This transistor is also available in the TO-92 case