MMBT3906W Search Results

BT3904W

Contextual Info: MOTOROLA Order this document MMBT3904WT1/D SEMICONDUCTOR TECHNICAL DATA General Purpose TVansistors NPN M M BT3904W T1 PNP MMBT3906W T1 NPN and PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the S O T -3 2 3 /S C -7 0 which is designed for low power surface mount

1N916

Abstract: MMBT3906W
Contextual Info: Zowie Technology Corporation General Purpose Transistor PNP Silicon COLLECTOR 3 3 MMBT3906W BASE 1 1 2 2 EMITTER SOT-323 MAXIMUM RATINGS Symbol Value Unit Collector-Emitter Voltage VCEO -40 Vdc Collector-Base Voltage VCBO -40 Vdc Emitter-Base Voltage VEBO

Contextual Info: MMBT3904WT1, NPN MMBT3906WT1, PNP General Purpose Transistors NPN and PNP Silicon http://onsemi.com These transistors are designed for general purpose amplifier applications. They are housed in the SOT−323/SC−70 package which is designed for low power surface mount applications.

1N916

Abstract: MMBT3904WT1 MMBT3904WT1G MMBT3906WT1 MMBT3906WT1G
Contextual Info: MMBT3904WT1, NPN MMBT3906WT1, PNP General Purpose Transistors NPN and PNP Silicon http://onsemi.com These transistors are designed for general purpose amplifier applications. They are housed in the SOT−323/SC−70 package which is designed for low power surface mount applications.

Contextual Info: Zowie Technology Corporation General Purpose Transistor PNP Silicon Lead free product Halogen-free type COLLECTOR 3 3 MMBT3906WGH BASE 1 1 2 2 EMITTER SOT-323 MAXIMUM RATINGS Symbol Value Unit Collector-Emitter Voltage VCEO -40 Vdc Collector-Base Voltage VCBO

Contextual Info: MMBT3906W General Purpose Transistor PNP Silicon COLLECTOR 3 3 1 BASE * “G” Lead Pb -Free 1 2 2 EMITTER SOT-323(SC-70) M aximum R atings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous Symbol VCEO

Contextual Info: Product specification MMBT3906W Features General purpose transistor. Pb?Free package is available. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-emitter voltage Parameter VCEO -40 V Collector-base voltage VCBO -40

1N916

Abstract: MMBT3906W
Contextual Info: DATA SHEET MMBT3906W PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 150 mWatts SOT-323 Unit: inch mm FEATURES • Collector-emitter voltage VCE = -40V .087(2.2) .070(1.8) • Collector current IC = -200mA • Both normal and Pb free product are available :

Contextual Info: ON Semiconductort PNP General Purpose Transistors MMBT3904WT1 NPN and PNP Silicon NPN MMBT3906WT1 These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications.

1N916

Abstract: MMBT3904WT1 MMBT3906WT1
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN MMBT3904WT1 PNP MMBT3906WT1 NPN and PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications.

U275

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MMBT3904W T1 PNP MMBT3906W T1 General Purpose Transistors NPN and PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT-323/SC-7Û which is designed for low power surface mount

MMBT3904WT1G

Abstract: 1N916 MMBT3904WT1 MMBT3906WT1 MMBT3906WT1G
Contextual Info: MMBT3904WT1, NPN MMBT3906WT1, PNP General Purpose Transistors NPN and PNP Silicon http://onsemi.com These transistors are designed for general purpose amplifier applications. They are housed in the SOT−323/SC−70 package which is designed for low power surface mount applications.

Contextual Info: MMBT3906W PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 150 mWatts 0.004 0.10 MIN. • PNP epitaxial silicon, planar design • Collector-emitter voltage V CE = -40V • Collector current I C = -200mA • Lead free in comply with EU RoHS 2002/95/EC directives.

SMMBT3904WT1

Contextual Info: MMBT3904WT1, NPN, SMMBT3904WT1, NPN, MMBT3906WT1, PNP General Purpose Transistors http://onsemi.com NPN and PNP Silicon COLLECTOR 3 These transistors are designed for general purpose amplifier applications. They are housed in the SOT−323/SC−70 package which

Contextual Info: DATA SHEET MMBT3906W PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 150 mWatts SOT-323 Unit: inch mm FEATURES • Collector-emitter voltage VCE = -40V .087(2.2) .070(1.8) • Collector current IC = -200mA • Both normal and Pb free product are available :

Contextual Info: MMBT3906W PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES • · · SOT-323 SC-70 Epitaxial Planar Die Construction Complementary NPN Type Available (MMBT3904)

Contextual Info: MMBT3906W PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 150 mWatts 0.004 0.10 MIN. • PNP epitaxial silicon, planar design • Collector-emitter voltage V CE = -40V • Collector current I C = -200mA • Lead free in comply with EU RoHS 2002/95/EC directives.

MBT3904WT1

Contextual Info: NPN MMBT3904WT1 FM120-M+ THRU PNP FM1200-M+ 1.0AGeneral SURFACE MOUNT SCHOTTKYTransistors BARRIER RECTIFIERS -20V- 200V MMBT3906WT1 Purpose WILLAS Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers

1N916

Abstract: MMBT3904WT1 MMBT3906WT1
Contextual Info: ON Semiconductort NPN MMBT3904WT1 PNP MMBT3906WT1 General Purpose Transistors NPN and PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications.

MMBT3904WT1G

Abstract: 1N916 MMBT3904WT1 MMBT3906WT1 MMBT3906WT1G
Contextual Info: MMBT3904WT1, NPN MMBT3906WT1, PNP General Purpose Transistors NPN and PNP Silicon http://onsemi.com These transistors are designed for general purpose amplifier applications. They are housed in the SOT−323/SC−70 package which is designed for low power surface mount applications.

1N916

Contextual Info: Zowie Technology Corporation General Purpose Transistor PNP Silicon COLLECTOR 3 3 MMBT3906WG BASE 1 1 2 2 EMITTER SOT-323 MAXIMUM RATINGS Symbol Value Unit Collector-Emitter Voltage VCEO -40 Vdc Collector-Base Voltage VCBO -40 Vdc Emitter-Base Voltage VEBO

Contextual Info: MMBT3904WT1, NPN, SMMBT3904WT1, NPN, MMBT3906WT1, PNP General Purpose Transistors http://onsemi.com NPN and PNP Silicon COLLECTOR 3 These transistors are designed for general purpose amplifier applications. They are housed in the SOT−323/SC−70 package which

Contextual Info: ON Semiconductort PNP General Purpose Transistors MMBT3904WT1 NPN and PNP Silicon NPN MMBT3906WT1 These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications.

Contextual Info: Bipolar Transistors Switching Transistors NPN − MMBT3904WT1 − MMBT2222AWT1 MMBT4401WT1 − MMBT3904TT1 − MMBT2222ATT1 PNP MMBT2907AWT1 − MMBT3906WT1 − − MMBT4403WT1 − MMBT3906TT1 − V BR CEO IC mA Max Min 60 40 40 40 40 40 600 200 200 600 600