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    MMBT4403LT1 Price and Stock

    onsemi MMBT4403LT1G

    TRANS PNP 40V 0.6A SOT23-3
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    DigiKey MMBT4403LT1G Cut Tape 67,923 1
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    MMBT4403LT1G Digi-Reel 67,923 1
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    MMBT4403LT1G Reel 66,600 3,000
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    Avnet Americas MMBT4403LT1G Reel 0 Weeks, 2 Days 71,429
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    MMBT4403LT1G Ammo Pack 30 Weeks, 4 Days 1
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    MMBT4403LT1G Reel 11 Weeks 3,000
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    MMBT4403LT1G Reel 11 Weeks 3,000
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    Mouser Electronics MMBT4403LT1G 101,046
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    Verical MMBT4403LT1G 3,237,000 3,000
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    Arrow Electronics MMBT4403LT1G 3,237,000 11 Weeks 3,000
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    MMBT4403LT1G 159,000 11 Weeks 3,000
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    MMBT4403LT1G Cut Strips 38,603 11 Weeks 1
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    Newark MMBT4403LT1G Cut Tape 32,543 1
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    MMBT4403LT1G Reel 18,000
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    Onlinecomponents.com MMBT4403LT1G 72,000
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    MMBT4403LT1G 3,670
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    MMBT4403LT1G 189
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    Rochester Electronics MMBT4403LT1G 1,624,000 1
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    TME MMBT4403LT1G 545 1
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    Avnet Asia MMBT4403LT1G 11 Weeks 90,000
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    Chip Stock MMBT4403LT1G 41,440
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    Master Electronics MMBT4403LT1G 72,000
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    New Advantage Corporation MMBT4403LT1G 4,752,000 1
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    Win Source Electronics MMBT4403LT1G 189,555
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    Wuhan P&S MMBT4403LT1G 1,971,034 1
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    onsemi SMMBT4403LT1G

    TRANS PNP 40V 0.6A SOT23-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SMMBT4403LT1G Cut Tape 35,372 1
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    SMMBT4403LT1G Digi-Reel 35,372 1
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    SMMBT4403LT1G Reel 33,000 3,000
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    Avnet Americas SMMBT4403LT1G Reel 10 Weeks 3,000
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    Mouser Electronics SMMBT4403LT1G 461,772
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    Newark SMMBT4403LT1G Cut Tape 18,693 5
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    SMMBT4403LT1G Reel 15,000
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    Bristol Electronics SMMBT4403LT1G 1,615 45
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    Rochester Electronics SMMBT4403LT1G 3,000 1
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    Avnet Silica SMMBT4403LT1G 11 Weeks 3,000
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    EBV Elektronik SMMBT4403LT1G 6,000 12 Weeks 3,000
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    Flip Electronics SMMBT4403LT1G 250
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    Master Electronics SMMBT4403LT1G 81,000
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    Wuhan P&S SMMBT4403LT1G 126,000 1
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    Aptina Imaging MMBT4403LT1G

    Trans GP BJT PNP 40V 0.6A 300mW 3-Pin SOT-23 T/R
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    Verical MMBT4403LT1G 159,000 3,000
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    onsemi SMMBT4403LT1G.

    Transistor Polarity:Pnp; Collector Emitter Voltage Max:40V; Continuous Collector Current:600Ma; Power Dissipation:225Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Transition Frequency:200Mhz; Dc Current Gain Hfe Min:20Hferohs Compliant: Yes |Onsemi SMMBT4403LT1G.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark SMMBT4403LT1G. Reel 3,000
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    onsemi MMBT4403LT1G (ALTERNATE: 5450387)

    Transistor, Bipolar, Si, PNP, Switching, VCEO -40VDC, IC -600mA, PD 225mW, SOT-23 | ON Semiconductor MMBT4403LT1G
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    RS MMBT4403LT1G (ALTERNATE: 5450387) Bulk 16 1
    • 1 $0.038
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    MMBT4403LT1 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MMBT4403LT1 Avic Electronics SOT-23 Plastic-Encapsulate Transistors Original PDF
    MMBT4403LT1 Leshan Radio Company General Purpose Transistor(PNP Silicon) Original PDF
    MMBT4403LT1 Motorola SWITCHING TRANSISTOR Original PDF
    MMBT4403LT1 On Semiconductor Small Signal Switching Transistor-PNP; Package: SOT-23 (TO-236) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 3000 Original PDF
    MMBT4403LT1 On Semiconductor Small SignalSwitch Original PDF
    MMBT4403LT1 On Semiconductor Switching Transistor PNP Original PDF
    MMBT4403LT1 On Semiconductor Switching Transistor PNP Original PDF
    MMBT4403LT1 On Semiconductor Switching Transistor Original PDF
    MMBT4403LT1/D On Semiconductor Motorola Preferred Device Original PDF
    MMBT4403LT1-D On Semiconductor Switching Transistor PNP Silicon Original PDF
    MMBT4403LT1G On Semiconductor Small Signal Switching Transistor-PNP (lead free); Package: SOT-23 (TO-236) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 3000 Original PDF
    MMBT4403LT1G On Semiconductor Switching Transistor (PNP Silicon) Original PDF
    MMBT4403LT1G On Semiconductor Switching Transistor Original PDF

    MMBT4403LT1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MMBT4403LT1

    Abstract: No abstract text available
    Text: MMBT4403LT1 Switching Transistor PNP Silicon Features • Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −40 Vdc Collector −Base Voltage VCBO −40 Vdc Emitter −Base Voltage


    Original
    PDF MMBT4403LT1

    MMBT4403LT1

    Abstract: No abstract text available
    Text: ON Semiconductort Switching Transistor MMBT4403LT1 PNP Silicon 3 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –40 Vdc Collector–Base Voltage VCBO –40 Vdc Emitter–Base Voltage VEBO –5.0 Vdc IC –600 mAdc Symbol Max


    Original
    PDF MMBT4403LT1 r14525 MMBT4403LT1/D MMBT4403LT1

    Untitled

    Abstract: No abstract text available
    Text: RECTRON SEMICONDUCTOR MMBT4403LT1 TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation O PCM: 0.3 W(Tamb=25 C) * Collector current ICM: - 0.6 A * Collector-base voltage V(BR)CBO: - 40 V * Operating and storage junction temperature range


    Original
    PDF MMBT4403LT1 OT-23 -55OC 150OC OT-23 MIL-STD-202E

    Untitled

    Abstract: No abstract text available
    Text: MMBT4403LT1 Preferred Device Switching Transistor PNP Silicon Features • Pb−Free Packages are Available http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −40 Vdc Collector −Base Voltage VCBO −40


    Original
    PDF MMBT4403LT1 MMBT4403LT1/D

    sot 23 marking code 2t

    Abstract: MMBT4403LT1 MMBT4403LT1G MMBT4403LT3 MMBT4403LT3G
    Text: MMBT4403LT1 Preferred Device Switching Transistor PNP Silicon Features • Pb−Free Packages are Available http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −40 Vdc Collector −Base Voltage VCBO −40


    Original
    PDF MMBT4403LT1 MMBT4403LT1/D sot 23 marking code 2t MMBT4403LT1 MMBT4403LT1G MMBT4403LT3 MMBT4403LT3G

    MMBT4403LT1

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMBT4403LT1/D SEMICONDUCTOR TECHNICAL DATA Switching Transistor MMBT4403LT1 COLLECTOR 3 PNP Silicon Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS 3 1 Rating Symbol Value Unit Collector – Emitter Voltage VCEO –40


    Original
    PDF MMBT4403LT1/D MMBT4403LT1 MMBT4403LT1/D* MMBT4403LT1

    MMBT4401LT1

    Abstract: MMBT4403LT1
    Text: MMBT4403LT1 PNP Silicon General Purpose Transistor As complementary types the NPN transistor MMBT4401LT1 is recommended. SOT-23 Plastic Package SOT-23 Plastic Package SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 oC Symbol Value Unit Collector Base Voltage


    Original
    PDF MMBT4403LT1 MMBT4401LT1 OT-23 4403LT1 10Vdc, 30Vdc, 150mAdc, 15mAdc MMBT4403LT1

    TO-236

    Abstract: MMBT4403LT1 MMBT4403LT1G MMBT4403LT3
    Text: MMBT4403LT1 Switching Transistor PNP Silicon Features • Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −40 Vdc Collector −Base Voltage VCBO −40 Vdc Emitter −Base Voltage


    Original
    PDF MMBT4403LT1 MMBT4403LT1/D TO-236 MMBT4403LT1 MMBT4403LT1G MMBT4403LT3

    MMBT4403LT1

    Abstract: MMBT4403LT1G MMBT4403LT3 MMBT4403LT3G
    Text: MMBT4403LT1 Preferred Device Switching Transistor PNP Silicon Features • Pb−Free Packages are Available http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −40 Vdc Collector −Base Voltage VCBO −40


    Original
    PDF MMBT4403LT1 MMBT4403LT1/D MMBT4403LT1 MMBT4403LT1G MMBT4403LT3 MMBT4403LT3G

    Untitled

    Abstract: No abstract text available
    Text: SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT4403LT1 1. BASE TRANSISTOR PNP 2. EMITTER 3. COLLECTOR 1. 0 FEATURES Power dissipation 0.3 W (Tamb=25℃) PCM: Collector current -0.6 A ICM: Collector-base voltage -40 V V(BR)CBO: Operating and storage junction temperature range


    Original
    PDF OT-23 OT-23 MMBT4403LT1 -150mA -150mA, -15mA 150mA, MMBT4403LT1 -20mA

    Untitled

    Abstract: No abstract text available
    Text: MMBT4403LT1G Switching Transistor PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −40 Vdc Collector −Base Voltage


    Original
    PDF MMBT4403LT1G MMBT4403LT1/D

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT4403LT1 1. BASE TRANSISTOR PNP 2. EMITTER 3. COLLECTOR 1. 0 FEATURES Power dissipation 0.3 W (Tamb=25℃) PCM: Collector current -0.6 A ICM: Collector-base voltage


    Original
    PDF OT-23 OT-23 MMBT4403LT1 I-100Â -150mA -150mA, -15mA 150mA, MMBT4403LT1

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort Switching Transistor MMBT4403LT1 PNP Silicon 3 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –40 Vdc Collector–Base Voltage VCBO –40 Vdc Emitter–Base Voltage VEBO –5.0 Vdc IC –600 mAdc Symbol Max


    Original
    PDF MMBT4403LT1

    MBT4403

    Abstract: No abstract text available
    Text: WILLAS FM120-M+ MMBT4403LT1 THRU General Purpose Transistors FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features design, excellent power dissipation offers • Batch PNPprocess Silicon


    Original
    PDF FM120-M+ MMBT4403LTHRU FM1200-M+ OD-123+ FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH MBT4403

    MMBT4403LT1

    Abstract: No abstract text available
    Text: ON Semiconductort Switching Transistor MMBT4403LT1 PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –40 Vdc Collector–Base Voltage VCBO –40 Vdc Emitter–Base Voltage VEBO –5.0 Vdc IC –600 mAdc Symbol Max Unit


    Original
    PDF MMBT4403LT1 r14525 MMBT4403LT1/D MMBT4403LT1

    MMBT4401LT1

    Abstract: MMBT4403LT1
    Text: MMBT4403LT1 TRANSISTOR NPN Features Power dissipation 。 P C M : 0.225 W (Tamb=25 C) Pluse Drain I CM : -0.6 mA Reverse Voltage V (BR)CBO : -40V Operating and storage junction temperature range 。 。 T j , T stg : -55 C to +150 C SOT-23 3 1 2 1. 1.BASE


    Original
    PDF MMBT4403LT1 OT-23 100mA 500mA MMBT4401LT1 MMBT4403LT1

    MMBT4403LT1

    Abstract: sot 23 marking code 2t MMBT4403LT1G MMBT4403LT3
    Text: MMBT4403LT1 Switching Transistor PNP Silicon Features • Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −40 Vdc Collector −Base Voltage VCBO −40 Vdc Emitter −Base Voltage


    Original
    PDF MMBT4403LT1 MMBT4403LT1/D MMBT4403LT1 sot 23 marking code 2t MMBT4403LT1G MMBT4403LT3

    sot-23 Marking 2T E

    Abstract: MMBT4403LT1 2t sot MARKING 2T SOT23 TRANSISTOR
    Text: @vic SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT4403LT1 TRANSISTOR PNP 1. BASE 2. EMITTER 3. COLLECTOR 1. 0 FEATURES Power dissipation 0.3 W (Tamb=25℃) PCM: Collector current -0.6 A ICM: Collector-base voltage -40 V V(BR)CBO: Operating and storage junction temperature range


    Original
    PDF OT-23 OT-23 MMBT4403LT1 -150mA -150mA, -15mA 150mA, MMBT4403LT1 -20mA sot-23 Marking 2T E 2t sot MARKING 2T SOT23 TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 MMBT4403LT1 1. BASE TRANSISTOR(PNP ) 2. EMITTER 3. COLLECTOR 1.0 FEATURES Power dissipation PCM : 0.3 W (Tamb=25℃) Collector current ICM : -0.6


    Original
    PDF OT-23 MMBT4403LT1 MMBT4403LT1 037TPY 950TPY 550REF 022REF

    MMBT4403LT1

    Abstract: MMBT4403LT1G MMBT4403LT3 MMBT4403LT3G
    Text: MMBT4403LT1 Preferred Device Switching Transistor PNP Silicon Features • Pb−Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −40 Vdc Collector −Base Voltage VCBO −40 Vdc Emitter −Base Voltage


    Original
    PDF MMBT4403LT1 MMBT4403LT1 MMBT4403LT1G MMBT4403LT3 MMBT4403LT3G

    1N916

    Abstract: MMBT4401LT1 MMBT4403LT1
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon MMBT4403LT1 3 COLLECTOR 3 1 BASE 1 2 EMITTER 2 CASE 318–08, STYLE 6 SOT– 23 TO–236AB MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage


    Original
    PDF MMBT4403LT1 236AB) abo02 1N916 MMBT4401LT1 MMBT4403LT1

    Untitled

    Abstract: No abstract text available
    Text: : S v m Se m i : SOT -23 Plastic Encapsulate Transistors 5YM5EMI SEMICONDUCTOR MMBT4403LT1 TRANSISTOR PNP FEATURES Power dissipation PCM : 0.3 W (Tainb=25 °C) Collector current Icm : -0.6 A Collector base voltage V (br)cbo :“ 40 V Operating and storage junction temperature range


    OCR Scan
    PDF MMBT4403LT1 OT-23 950TPY 037TPY 550REF 022REF

    MMBT44Q3LT1

    Abstract: SOA SOT23
    Text: SOT-23 FlastifrgncapsuJate Transistors MMBT4403LT1 TR A N SISTO R . P h i 1 M A llJ B E S P o w e r L tls s n p a h iin Pcm 0.3 W iTamb-25i' > C o lle c to r c u rfe r't Ijv . -D .b A C ollector base voltage ViRRicnn:-40 V O p e ra tin g a n d s to ra g e |unctlon l i i i r i p e r a l u r o ran ge


    OCR Scan
    PDF OT-23 MMBT44Q3LT1 OT-23 -15mA MHBT440JUT1 MMBT44Q3LT1 SOA SOT23

    2T203

    Abstract: MMBT4403LT1
    Text: M C C SOT-23 Plastic-Encapsulate Transistors MMBT4403LT1 TRANSISTOR PNP 1.BASE 2 .EMITTER 3.COLLECTOR FEATURES Pc m : 0.3 W (Tam b=251C ) Collector current ICM: -0.6 A C o llecto r-base vo ltag e V{gr)cbo :-40V Operating and storage junction temperature range


    OCR Scan
    PDF OT-23 MMBT4403LT1 -150m MMBT4403LT1 2T203