MMDT5551 Search Results
MMDT5551 Datasheets (7)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| MMDT5551 |
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DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR | Original | 57.16KB | 2 | ||
| MMDT5551 |
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DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR | Original | 141.11KB | 4 | ||
| MMDT5551-7 |
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Dual NPN Small Signal Surface Mount Transistor | Original | 72.02KB | 3 | ||
| MMDT5551-7 |
|
Transistors (BJT) - Arrays, Discrete Semiconductor Products, TRANS DUAL NPN 160V 200MA SOT363 | Original | 4 | |||
| MMDT5551-7-F |
|
Dual NPN Small Signal Surface Mount Transistor | Original | 72.02KB | 3 | ||
| MMDT5551-7-F |
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Transistors (BJT) - Arrays, Discrete Semiconductor Products, TRANS DUAL NPN 160V 200MA SOT363 | Original | 4 | |||
| MMDT5551-TP |
|
Transistors (BJT) - Arrays, Discrete Semiconductor Products, TRANS DUAL NPN 160V 200MA SOT363 | Original | 2 |
MMDT5551 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# MMDT5551 Features • • • Surface Mount SOT-363 Package Capable of 200mWatts of Power Dissipation Ideal for Medium Power Amplification and |
Original |
MMDT5551 OT-363 200mWatts 120Vdc, OT-363 10mAdc, 20Vdc, 100MHz) | |
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Contextual Info: MMDT5551 NPN/NPN Multi-Chip Transistor FEATURES • Ideal for Medium Power Amplification and Switching • Complementary PNP Type Available MMDT5401 MECHANICAL DATA • Case: SOT-363 Plastic • Case material: “Green” molding compound, UL flammability classification 94V-0, (No Br. Sb. CI) |
Original |
MMDT5551 MMDT5401) OT-363 2002/95/EC OT-363 | |
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Contextual Info: SPICE MODEL: MMDT5551 MMDT5551 DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · · · Epitaxial Planar Die Construction B1 C2 Ideal for Medium Power Amplification and Switching B C Lead Free/RoHS Compliant Note 3 B2 · · · · C1 G H Mechanical Data |
Original |
MMDT5551 MMDT5401) OT-363 J-STD-020C MIL-STD-202, DS30172 | |
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Contextual Info: MMDT5401 Features Mechanical Data • Epitaxial Planar Die Construction Complementary NPN Type Available MMDT5551 Case Material: Molded Plastic, “Green” Molding Compound, Ideal for Medium Power Amplification and Switching UL Flammability Classification Rating 94V-0 |
Original |
MMDT5401 OT363 MMDT5551) J-STD-020 MIL-STD202, AEC-Q101 DS30169 | |
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Contextual Info: MMDT5401 DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • • • • A Epitaxial Planar Die Construction Complementary NPN Type Available MMDT5551 Ideal for Medium Power Amplification and Switching Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 3) |
Original |
MMDT5401 MMDT5551) OT-363 DS30169 | |
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Contextual Info: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# MMDT5551 Features • • • • • x • Lead Free Finish/RoHS Compliant "P" Suffix designates RoHS Compliant. See ordering information |
Original |
MMDT5551 200mWatts | |
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Contextual Info: MMDT5551 NPN/NPN Multi-Chip Transistor FEATURES • Ideal for Medium Power Amplification and Switching • Complementary PNP Type Available MMDT5401 MECHANICAL DATA • Case: SOT-363 Plastic • Case material: “Green” molding compound, UL flammability classification 94V-0, (No Br. Sb. CI) |
Original |
MMDT5551 MMDT5401) OT-363 2002/95/EC | |
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Contextual Info: MCC TM Micro Commercial Components Features • Case Material: Molded Plastic. Classification Rating 94V-0 Marking:K4N • • • • • omponents 20736 Marilla Street Chatsworth !"# $ % !"# MMDT5551 |
Original |
MMDT5551 OT-363 200mWatts OT-363 | |
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Contextual Info: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# MMDT5551 Features • • • Surface Mount SOT-363 Package Capable of 200mWatts of Power Dissipation Ideal for Medium Power Amplification and |
Original |
MMDT5551 OT-363 200mWatts 120Vdc, OT-363 10mAdc, 20Vdc, 100MHz) | |
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Contextual Info: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# MMDT5551 Features • Case Material:Molded Plastic. UL Flammability Classificatio Rating 94-0 and MSL Rating 1 |
Original |
MMDT5551 OT-363 200mWatts OT-363 | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors MMDT5551 SOT-363 Multi-Chip TRANSISTOR NPN FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current 0.2 A ICM: Collector-base voltage 180 V V(BR)CBO: Operating and storage junction temperature range |
Original |
OT-363 MMDT5551 OT-363 100MHz | |
MMDT5551
Abstract: MMDT5401
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Original |
OT-363 MMDT5551 OT-363 MMDT5401) 100MHz MMDT5551 MMDT5401 | |
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Contextual Info: MMDT5551 Dual Transistor NPN/PNP SOT-363 Features Epitaxial Planar Die Construction Complementary PNP Type Available(MMDT5401) Ideal for Medium Power Amplification and Switching MRKING:K4N MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol |
Original |
MMDT5551 OT-363 MMDT5401) 100MHz | |
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Contextual Info: MMDT5401 DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features • • • • • • A Epitaxial Planar Die Construction Complementary NPN Type Available MMDT5551 Ideal for Medium Power Amplification and Switching |
Original |
MMDT5401 MMDT5551) OT-363 DS30169 | |
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Contextual Info: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# MMDT5551 Features • • • • • • x • Halogen free available upon request by adding suffix "-HF" |
Original |
MMDT5551 200mWatts | |
High Voltage Switching Transistor
Abstract: MMDT5551
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Original |
MMDT5551 MMDT5551 MMDT5551L-AL6-R MMDT5551G-AL6-R OT-363 QW-R218-022 High Voltage Switching Transistor | |
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Contextual Info: MMDT5551 DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features • • • • • • A Epitaxial Planar Die Construction Complementary PNP Type Available MMDT5401 Ideal for Medium Power Amplification and Switching |
Original |
MMDT5551 MMDT5401) OT-363 DS30172 | |
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Contextual Info: MMDT5551 Features • · · · Epitaxial Planar Die Construction Complementary PNP Type Available MMDT5401 Ideal for Medium Power Amplification and Switching Ultra-Small Surface Mount Package SOT-363 A C2 · · · E2 Case: SOT-363, Molded Plastic Terminals: Solderable per MIL-STD-202, |
Original |
MMDT5551 MMDT5401) OT-363 OT-363, MIL-STD-202, 100MHz 200mA, 300ms, DS30172 | |
sot363 marking 31Contextual Info: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# MMDT5551 Features • Case Material:Molded Plastic. UL Flammability Classificatio Rating 94-0 and MSL Rating 1 |
Original |
MMDT5551 OT-363 200mWatts sot363 marking 31 | |
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Contextual Info: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# MMDT5551 Features • • • • Surface Mount SOT-363 Package Capable of 200mWatts of Power Dissipation Ideal for Medium Power Amplification and Switching |
Original |
MMDT5551 OT-363 200mWatts OT-363 120Vdc, 10mAdc, 20Vdc, 100MHz) | |
|
Contextual Info: MMDT5551 NPN/NPN Multi-Chip Transistor FEATURES • Ideal for Medium Power Amplification and Switching • Complementary PNP Type Available MMDT5401 MECHANICAL DATA • Case: SOT-363 Plastic • Lead Free in RoHS 2002/95/EC Compliant Maximum Ratings @ TA = 25℃ |
Original |
MMDT5551 MMDT5401) OT-363 2002/95/EC 100MHz Jun-2009, KSTR09 MMDT5551 | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors MMDT5551 Multi-Chip TRANSISTOR（NPN） SOT-363 FEATURES Power dissipation PCM : 0.2 W（Tamb=25℃） Collector current ICM : 0.2 A Collector-base voltage V BR CBO : 180 |
Original |
OT-363 MMDT5551 OT-363 100MHz | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors MMDT5551 DUAL TRANSISTOR NPN+NPN SOT-363 FEATURES z Epitaxial Planar Die Construction z Complementary PNP Type Available(MMDT5401) z Ideal for Medium Power Amplification and Switching |
Original |
OT-363 MMDT5551 OT-363 MMDT5401) 100MHz | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors MMDT5551 DUAL TRANSISTOR NPN+NPN SOT-363 FEATURES z Epitaxial Planar Die Construction z Complementary PNP Type Available(MMDT5401) z Ideal for Medium Power Amplification and Switching |
Original |
OT-363 MMDT5551 OT-363 MMDT5401) 100MHz | |