MMDT5551 Search Results

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMDT5551 Features • • • Surface Mount SOT-363 Package Capable of 200mWatts of Power Dissipation Ideal for Medium Power Amplification and

Contextual Info: MMDT5551 NPN/NPN Multi-Chip Transistor FEATURES • Ideal for Medium Power Amplification and Switching • Complementary PNP Type Available MMDT5401 MECHANICAL DATA • Case: SOT-363 Plastic • Case material: “Green” molding compound, UL flammability classification 94V-0, (No Br. Sb. CI)

Contextual Info: SPICE MODEL: MMDT5551 MMDT5551 DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · · · Epitaxial Planar Die Construction B1 C2 Ideal for Medium Power Amplification and Switching B C Lead Free/RoHS Compliant Note 3 B2 · · · · C1 G H Mechanical Data

Contextual Info: MMDT5401 Features Mechanical Data • Epitaxial Planar Die Construction   Complementary NPN Type Available MMDT5551  Case Material: Molded Plastic, “Green” Molding Compound,  Ideal for Medium Power Amplification and Switching  UL Flammability Classification Rating 94V-0

Contextual Info: MMDT5401 DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • • • • A Epitaxial Planar Die Construction Complementary NPN Type Available MMDT5551 Ideal for Medium Power Amplification and Switching Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 3)

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMDT5551 Features • • • • • x • Lead Free Finish/RoHS Compliant "P" Suffix designates RoHS Compliant. See ordering information

Contextual Info: MMDT5551 NPN/NPN Multi-Chip Transistor FEATURES • Ideal for Medium Power Amplification and Switching • Complementary PNP Type Available MMDT5401 MECHANICAL DATA • Case: SOT-363 Plastic • Case material: “Green” molding compound, UL flammability classification 94V-0, (No Br. Sb. CI)

Contextual Info: MCC TM Micro Commercial Components Features • Case Material: Molded Plastic. Classification Rating 94V-0 Marking:K4N • • • • •
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMDT5551

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMDT5551 Features • • • Surface Mount SOT-363 Package Capable of 200mWatts of Power Dissipation Ideal for Medium Power Amplification and

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMDT5551 Features • Case Material:Molded Plastic. UL Flammability Classificatio Rating 94-0 and MSL Rating 1

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors MMDT5551 SOT-363 Multi-Chip TRANSISTOR NPN FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current 0.2 A ICM: Collector-base voltage 180 V V(BR)CBO: Operating and storage junction temperature range

MMDT5551

Abstract: MMDT5401
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors MMDT5551 DUAL TRANSISTOR NPN+NPN SOT-363 FEATURES z Epitaxial Planar Die Construction z Complementary PNP Type Available(MMDT5401) z Ideal for Medium Power Amplification and Switching

Contextual Info: MMDT5551 Dual Transistor NPN/PNP SOT-363 Features — Epitaxial Planar Die Construction — Complementary PNP Type Available(MMDT5401) — Ideal for Medium Power Amplification and Switching MRKING:K4N MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol

Contextual Info: MMDT5401 DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features • • • • • • A Epitaxial Planar Die Construction Complementary NPN Type Available MMDT5551 Ideal for Medium Power Amplification and Switching

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMDT5551 Features • • • • • • x • Halogen free available upon request by adding suffix "-HF"

High Voltage Switching Transistor

Abstract: MMDT5551
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMDT5551 Preliminary DUAL TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR „ DESCRIPTION The UTC MMDT5551 is a high voltage fast-switching dual NPN transistor. It is characterized with high breakdown voltage, high current gain and high switching speed.

Contextual Info: MMDT5551 DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features • • • • • • A Epitaxial Planar Die Construction Complementary PNP Type Available MMDT5401 Ideal for Medium Power Amplification and Switching

Contextual Info: MMDT5551 Features • · · · Epitaxial Planar Die Construction Complementary PNP Type Available MMDT5401 Ideal for Medium Power Amplification and Switching Ultra-Small Surface Mount Package SOT-363 A C2 · · · E2 Case: SOT-363, Molded Plastic Terminals: Solderable per MIL-STD-202,

sot363 marking 31

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMDT5551 Features • Case Material:Molded Plastic. UL Flammability Classificatio Rating 94-0 and MSL Rating 1

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMDT5551 Features • • • • Surface Mount SOT-363 Package Capable of 200mWatts of Power Dissipation Ideal for Medium Power Amplification and Switching

Contextual Info: MMDT5551 NPN/NPN Multi-Chip Transistor FEATURES • Ideal for Medium Power Amplification and Switching • Complementary PNP Type Available MMDT5401 MECHANICAL DATA • Case: SOT-363 Plastic • Lead Free in RoHS 2002/95/EC Compliant Maximum Ratings @ TA = 25℃

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors MMDT5551 Multi-Chip TRANSISTOR（NPN） SOT-363 FEATURES Power dissipation PCM : 0.2 W（Tamb=25℃） Collector current ICM : 0.2 A Collector-base voltage V BR CBO : 180

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors MMDT5551 DUAL TRANSISTOR NPN+NPN SOT-363 FEATURES z Epitaxial Planar Die Construction z Complementary PNP Type Available(MMDT5401) z Ideal for Medium Power Amplification and Switching

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors MMDT5551 DUAL TRANSISTOR NPN+NPN SOT-363 FEATURES z Epitaxial Planar Die Construction z Complementary PNP Type Available(MMDT5401) z Ideal for Medium Power Amplification and Switching