Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MMIX4B20N300 Search Results

    MMIX4B20N300 Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    MMIX4B20N300
    		IXYS Discrete Semiconductor Products - Transistors - IGBTs - Arrays - MOSFET N-CH Original PDF 249.38KB
    SF Impression Pixel

    MMIX4B20N300 Price and Stock

    Select Manufacturer

    IXYS Corporation MMIX4B20N300

    IGBT F BRIDGE 3000V 34A 24SMPD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MMIX4B20N300 Tube 1
    • 1 $122.23
    • 10 $122.23
    • 100 $105.00
    • 1000 $105.00
    • 10000 $105.00
    		Buy Now
    Mouser Electronics MMIX4B20N300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $118.52
    • 10000 $118.52
    		Get Quote
    TTI MMIX4B20N300 Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $140.00
    • 10000 $140.00
    		Buy Now

    Littelfuse Inc MMIX4B20N300

    Disc Igbt Smpd Pkg-Bimosfet Smpd-B/ Tube |Littelfuse MMIX4B20N300
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark MMIX4B20N300 Bulk 300
    • 1 -
    • 10 -
    • 100 $110.04
    • 1000 $110.04
    • 10000 $110.04
    		Buy Now

    MMIX4B20N300 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MMIX4B20N300

    Contextual Info: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor MMIX4B20N300 C2 C1 G1 G2 E2C4 E1C3 Electrically Isolated Tab VCES = 3000V IC110 = 14A VCE(sat) ≤ 3.2V G4 G3 C2 E3E4 Symbol Test Conditions G2 E2C4 Maximum Ratings


    Original     		MMIX4B20N300 IC110 IC110 MMIX4B20N300 6-05-12-B PDF

    MMIX4B20N300

    Abstract: G2 - 395 DS100432
    Contextual Info: Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor MMIX4B20N300 C2 C1 G1 G2 E2C4 E1C3 Electrically Isolated Tab VCES = 3000V IC90 = 15A VCE(sat) ≤ 3.2V G4 G3 C2 E3E4 Symbol Test Conditions G2 E2C4 Maximum Ratings


    Original     		MMIX4B20N300 MMIX4B20N300 1-23-09-A G2 - 395 DS100432 PDF

    MMIX4B20N300

    Contextual Info: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 3000V IC110 = 14A VCE sat ≤ 3.2V MMIX4B20N300 C2 C1 G1 G2 E2C4 E1C3 (Electrically Isolated Tab) G4 G3 C2 E3E4 Symbol Test Conditions Maximum Ratings


    Original     		IC110 MMIX4B20N300 MMIX4B20N300 6-05-12-B PDF

    mini inductances

    Abstract: DMA90U1800LB MMIX1F44N100Q3 MMIX4B20N300
    Contextual Info: IXYSPOWER P R O D U C T B R I E F Surface Mount Power Device SMPD and Mini SMPD Packages Lighter weight, more power(ultra-low profile, energy efficient, and rugged) January 2013 SMPD-X SMPD OVERVIEW IXYS introduces a new packaging technology – the Surface Mount Power Device (SMPD)


    Original     		OT-227 O-264 PLUS247 mini inductances DMA90U1800LB MMIX1F44N100Q3 MMIX4B20N300 PDF