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MOS200808 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: HI-SINCERITY Spec. No. : MOS200808 Issued Date : 2008.11.12 Revised Date :2008,12,30 Page No. : 1/5 MICROELECTRONICS CORP. H4946 Series 8-Lead Plastic DIP-8 Package Code: P N-CHANNEL ENHANCEMENT MODE POWER MOSFET 60V, 5A 8 Features • • RDS(on)<41mΩ@VGS=10V, ID=5.0A	Original	MOS200808 H4946 H4946DS 183oC 217oC 260oC H4946DS H4946DP 10sec	PDF
G14-G15 Abstract: H4946 629 marking diode Contextual Info: HI-SINCERITY Spec. No. : MOS200808 Issued Date : 2008.11.12 Revised Date :2009,03,05 Page No. : 1/5 MICROELECTRONICS CORP. H4946 Series 8-Lead Plastic DIP-8 Package Code: P N-CHANNEL ENHANCEMENT MODE POWER MOSFET 60V, 5A 8 Features • • RDS(on)<41mΩ@VGS=10V, ID=5.0A	Original	MOS200808 H4946 H4946DS 183oC 217oC 260oC H4946DS H4946DP 10sec G14-G15 629 marking diode	PDF

Catalog Datasheet

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Contextual Info: HI-SINCERITY Spec. No. : MOS200808 Issued Date : 2008.11.12 Revised Date :2008,12,30 Page No. : 1/5 MICROELECTRONICS CORP. H4946 Series 8-Lead Plastic DIP-8 Package Code: P N-CHANNEL ENHANCEMENT MODE POWER MOSFET 60V, 5A 8 Features • • RDS(on)<41mΩ@VGS=10V, ID=5.0A

Original

MOS200808 H4946 H4946DS 183oC 217oC 260oC H4946DS H4946DP 10sec

PDF

G14-G15

Abstract: H4946 629 marking diode
Contextual Info: HI-SINCERITY Spec. No. : MOS200808 Issued Date : 2008.11.12 Revised Date :2009,03,05 Page No. : 1/5 MICROELECTRONICS CORP. H4946 Series 8-Lead Plastic DIP-8 Package Code: P N-CHANNEL ENHANCEMENT MODE POWER MOSFET 60V, 5A 8 Features • • RDS(on)<41mΩ@VGS=10V, ID=5.0A

Original

MOS200808 H4946 H4946DS 183oC 217oC 260oC H4946DS H4946DP 10sec G14-G15 629 marking diode

PDF