MPS3568 Search Results

MPS3568

Abstract: MPS3414C MPS3415C MPS3416C MPS3417C MPS3563C MPS3565C MPS3566C MPS3567C MPS3568C
Contextual Info: B IPO LA R TRANSISTOR CHIPS NPN Transistors ‘M P S ’ Device ly p e s ELECTRICAL CHARACTERISTICS al T* - 25°C OC C ur«t Gain '«0 Device Type MPS3405C MPS3414C MPS3415C MPS3416C MPS3417C MPS3563C MPS3565C MPS3566C MPS3567C MPS3568C MPS3S69C MPS3642C MPS3646C

MPS3568

Contextual Info: MPS3568 M AXIM UM RATINGS S ym bol Value U n it C ollector-E m itter Voltage Rating V cE O 60 Vdc Collector-Base Voltage v CBO 80 Vdc Em itter-Base Voltage Vebo 5.0 Vdc Collector C urrent — C ontinuous 'c 600 m Adc Total Device Dissipation a T a = 25'C

Contextual Info: MPS3568 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)80 I(C) Max. (A)600m Absolute Max. Power Diss. (W)625m’ Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)40 V(CE)sat Max. (V).25 @I(C) (A) (Test Condition)150m

mps3569

Abstract: MPS3567 MPS3568
Contextual Info: MOTORCLA SC XSTRS/R 12 E D I F b3t,?2SM Q0fitiG7Q 7 | r-a^-ai MPS3567 thru MPS3569 M A X I M U M R A T IN G S Rating Symbol MPS3567 MPS3568 MPS3569 40 Unit Collector-Emitter Voltage VCEO 60 Collector-Base Voltage VCBO 80 Vdc Vdc Emitter-Base Voitage Veb o

transistors BC 557C

Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and

2n2846

Abstract: 2N3015 2n2224 MOTOROLA 2n2218 TRANSISTOR 2n2848 2N2222A motorola 2C2222A MPS8092 2N4401 die 2n3116
Contextual Info: 34 M O T O R O L A SC -CDIODES/OPTO} 1 D • t,3fc,7S55 0 0 3 7 ^ 7 4 34C 37974 7"-3r- /S SILICON SMALL-SIGNAL TRANSISTOR DICE continued 2C2222A — DIE NO. NPN LINE SOURCE — DMB101 This die provides performance similar to that of the following device types:

2N2540

Abstract: 2N2846 2n5219 MPSD05 2N1959 2n3299
Contextual Info: 34 MOTOROLA SC -CDIODES/OPTO} D 1 L3fc,7355 □□37T74 34C 37974 7 " - 3 r - /$• SILICON SMALL-SIGNAL TRANSISTOR DICE continued 2C2222A DIE NO. — LINE SOURCE — DMB101 i npn This die provides performance similar to that of the following device types:

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

Contextual Info: AL L E G R O M I C R O S Y S T E M S INC 8514019 SPRAGUE. T3 D • 0SGM33Ô OGOBS^Ü S E M I C O N D S / ICS 4 ■ ALGR 93D 0359.0 D r-a7-ft? _' PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C

MPS3405C

Abstract: MPS3414C MPS3415C MPS3416C MPS3417C MPS3563C MPS3565C MPS3566C MPS3567C MPS3568C
Contextual Info: ALLEGRO MICROSYSTEMS INC 85 140 19 SP RA GU E. D T3 • 0504330 G0G3SbS S ■! AL6R S E M I C O N D S / ICS TA 9 3 D 03 5 6 5 ^ BIPOLAR TRANSISTOR CHIPS NPN Transistors ‘MPS’ Device Types E LE C T R IC A L CH ARACTERISTICS at TA = 25°C DC Current Gain

MPS3565

Contextual Info: SPRAGUE/SEMICOND GROUP 13 85 14 019 SPRAGUE. D • ÖS1 3 ÖS0 0 0 0 3 5 1 0 S E M I C OND S/ IC S S ■ 93D 03590 D T '1 1 -^ 0 PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C IcBO O O -« .