MPSA29 Search Results

MPSA28

Abstract: MPSA28RLRPG MPSA29 MPSA29G MPSA29RLRP MPSA29RLRPG MPS-A29
Contextual Info: MPSA28, MPSA29 MPSA29 is a Preferred Device Darlington Transistors NPN Silicon Features • Pb-Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage MPSA28 MPSA29 VCES 80 100 Vdc Collector-Base Voltage

Contextual Info: ON Semiconductort MPSA28 MPSA29* Darlington Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol MPSA28 MPSA29 Unit Collector–Emitter Voltage VCES 80 100 Vdc Collector–Base Voltage VCBO 80 100 Vdc Emitter–Base Voltage

MPSA29 equivalent

Abstract: MPS-A29 BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistors MPSA28 MPSA29* NPN Silicon COLLECTOR 3 *Motorola Preferred Device BASE 2 EMITTER 1 MAXIMUM RATINGS Rating Symbol MPSA28 MPSA29 Unit Collector – Emitter Voltage VCES 80 100 Vdc Collector – Base Voltage

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS MPSA28 / MPSA29 TO-92 Plastic Package E BC ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage Collector Base Voltage

MPSA29 equivalent

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MPSA29 Preliminary NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR  DESCRIPTION The UTC MPSA29 is a darlington transistor, it uses UTC’s advanced technology to provide customers with high DC current gain, etc. 

Contextual Info: MPSA28 MPSA29* M AXIM UM RATINGS Symbol Rating CASE 29-04, STYLE 1 TO-92 TO-226AA Unit M PSA28 M PSA29 Collector-Emitter V oltage VCES 80 C ollector-Base V oltage VCBO 80 Em itter-Base V oltage v EBO 12 V dc >C 500 m A dc PD 625 5.0 mwrc Pd 1.5 12 W atts

MPS-A28

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistors MPSA28 MPSA29* NPN Silicon COLLECTOR 3 ‘Motorola Preferred Device MAXIMUM RATINGS Symbol MPSA28 MPSA29 Collector- Emitter Voltage VCES 80 100 Vdc Collector- Base Voltage VCBO 80 100 Vdc Emitter-Base Voltage

MPSA28

Abstract: MPSA29
Contextual Info: ON Semiconductort MPSA28 MPSA29* Darlington Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol MPSA28 MPSA29 Unit Collector–Emitter Voltage VCES 80 100 Vdc Collector–Base Voltage VCBO 80 100 Vdc Emitter–Base Voltage

transistor motorola 359

Abstract: MPSA28 MPSA29 MPSA42 MPSA43 MPSA44 transistor MPSA42 2904 g
Contextual Info: M PSA28 M PSA 29* MAXIMUM RATINGS Rating Symbol MPSA28 MPSA29 Collector-Emitter Voltage VCES 80 100 Collector-Base Voltage VCBO 80 100 Emitter-Base Voltage Vdc Vdc vebo 12 Vdc Collector Current — Continuous 'c 500 mAdc Total Device Dissipation @ T /\ = 25°C

MPSA28

Abstract: MPSA29
Contextual Info: MPSA29 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 500 mA. Sourced from Process 03. See MPSA28 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

MPSA28

Abstract: MPSA28G MPSA28RLRP MPSA28RLRPG MPSA29 MPSA29G MPSA29RLRP MPSA29RLRPG Marking code mps
Contextual Info: MPSA28, MPSA29 MPSA29 is a Preferred Device Darlington Transistors NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage MPSA28 MPSA29 VCES 80 100 Vdc

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 MPSA29 TRANSISTOR NPN 1.EMITTER FEATURES z Darlington Transistor 2.BASE 3.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value

Contextual Info: ON Semiconductort MPSA28 MPSA29* Darlington Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol MPSA28 MPSA29 Unit Collector −Emitter Voltage VCES 80 100 Vdc Collector −Base Voltage VCBO 80 100 Vdc Emitter −Base Voltage

MPSA29

Abstract: MPSA28 MPSA28RLRPG MPSA29G MPSA29RLRP MPSA29RLRPG
Contextual Info: MPSA28, MPSA29 MPSA29 is a Preferred Device Darlington Transistors NPN Silicon Features • Pb-Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage MPSA28 MPSA29 VCES 80 100 Vdc Collector-Base Voltage

CBVK741B019

Abstract: F63TNR MPSA28 MPSA29 PN2222N BCxxx TRANSISTOR
Contextual Info: MPSA29 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 500 mA. Sourced from Process 03. See MPSA28 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

Contextual Info: MPSA28, MPSA29 MPSA29 is a Preferred Device Darlington Transistors NPN Silicon Features • Pb-Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage MPSA28 MPSA29 VCES 80 100 Vdc Collector-Base Voltage

Contextual Info: MPSA28 MPSA29* M AXIMUM RATINGS Symbol Rating C o llector-E m itter Voltage MPSA28 MPSA29 80 Collector-Base Voltage VCBO 80 Em itter-Base Voltage v EBO 12 Vdc C ollector C urrent — C ontinuous >C 500 m Adc Total Device D issipation <5 T a = 25°C Derate above 25°C

Contextual Info: MPSA28 MPSA29 SILICON NPN DARLINGTON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR MPSA28 and MPSA29 are silicon NPN Darlington transistors manufactured by the epitaxial planar process and designed for applications requiring extremely high gain.

MPSA28

Abstract: MPSA29
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS MPSA28 / MPSA29 TO-92 Plastic Package E BC ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage Collector Base Voltage

Contextual Info: Discrete POWER & Signal Technologies F = A l R O H I L .D SEM ICONDUCTOR MPSA29 . TO-92 NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 500 mA. Sourced from Process 03. See MPSA28 for characteristics.

MPSA29

Abstract: MPS-A28
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistors MPSA28 MPSA29* NPN Silicon COLLECTOR 3 •Motorola Preferred Device M AXIM UM RATINGS Symbol MPSA28 MPSA29 Unit C ollector-E m itter Voltage Rating VCES 80 100 Vdc C ollector-B ase Voltage VCBO 80

Contextual Info: ON Semiconductort MPSA28 MPSA29* Darlington Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol MPSA28 MPSA29 Unit Collector–Emitter Voltage VCES 80 100 Vdc Collector–Base Voltage VCBO 80 100 Vdc Emitter–Base Voltage

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

mpsa25c

Abstract: MPS-A12 MPS6576C
Contextual Info: AL L E GRO MI C ROS Y S T E MS I NC T3 D • 0504330 DDQBSbb - 8514019 SPRAGUE. 7 ■ ALGR , ^ 93D 03566 3 ' X ' f l i l ~\£> SEMICONDS / ICS BIPOLAR TRANSISTOR CHIPS NPN Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C Device Type