MPSA75 Search Results

Contextual Info: DATA SHEET MPSA75 MPSA76 MPSA77 PNP DARLINGTON TRANSISTOR TO-92 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MPSA75 series are silicon PNP Darlington Transistors, manufactured by the epitaxial planar process, designed for applications requiring extremely high gain.

MPSA26

Contextual Info: bTE T> m MPSA25 MPSA26 MPSA27 bbS3131 0D2B01S b?0 • APX N AUER PHILIPS/DISCRETE A NPN DARLINGTON TRANSISTOR NPN small-signal Darlington transistors, each in a plastic TO-92 envelope. PNP complementary types are MPSA75, MPSA76, and MPSA77. Q UICK REFERENCE D A T A

MPSA25

Abstract: npn transistor t12 MPSA75 MPSA76 MPSA77
Contextual Info: fe^E ]> • bb53S31 D02ÔD23 747 MPSA75 MPSA76 MPSA77 N AI1ER PHILIPS/DISCRETE PNP DARLINGTON TRANSISTOR PNP small-signal Darlington transistors, each in a plastic TO-92 envelope. NPN complementary types are MPSA25, 26, and 27. Q UICK REFERENCE D A T A Collector-em itter voltage

MPSA25

Abstract: MPSA27 MPS-A25 MPSA26 MPSA75 MPSA76 MPSA77 MPS-A26
Contextual Info: blE ]> • I I M P ^ A P 'S II MPSA27 bb53«i31 DDSÔG1S b70 *A P X N ANER PHILIPS/DISCRETE MPSA26 NPN DARLINGTON TRANSISTOR NPN small-signal Darlington transistors, each in a plastic TO-92 envelope. PNP complementary types are MPSA75, MPSA76, and MPSA77.

Contextual Info: MPSA75 MPSA77 CASE 29-04, STYLE 1 TO-92 TO-226AA MAXIMUM RATINGS Rating Symbol MPSA75 Collector-Emitter Voltage VC ES -4 0 Emitter-Base Voltage v EBO MPSA77 60 - Unit Vdc 10 Vdc Collector Current — Continuous >C -5 0 0 Ade Total Device Dissipation (<v T a = 25°C

mpsa77* replacement

Abstract: MPSA77 equivalent BC237 MPSA75 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistors MPSA75 MPSA77 PNP Silicon COLLECTOR 3 BASE 2 EMITTER 1 1 MAXIMUM RATINGS 2 Rating Symbol MPSA75 MPSA77 Unit Collector – Emitter Voltage VCES –40 –60 Vdc Emitter – Base Voltage VEBO –10

MPSA75

Abstract: MPSA75RLRA MPSA75RLRAG MPSA75RLRP MPSA75RLRPG MPSA77 MPSA77G MPSA77RLRA Marking code mps
Contextual Info: MPSA75, MPSA77 Darlington Transistors PNP Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit VCES −40 −60 Vdc VEBO −10 Vdc Collector Current − Continuous IC −500 mAdc Total Device Dissipation @ TA = 25°C

MPSA25

Abstract: MPSA75 MPSA76 MPSA77 transistor oc 76
Contextual Info: MPSA75 MPSA76 MPSA77 PHILIPS INTERNATIONAL SbE J> 7 11 □ fl2 b 00142522 472 » P H I N m PNP DARLINGTON TRANSISTOR PNP small-signal Darlington transistors, each in a plastic TO-92 envelope. NPN complementary types are MPSA25, 26, and 27. QUICK REFERENCE DA TA

MPSA75

Abstract: MPSA75RLRPG MPSA77 MPSA77G
Contextual Info: MPSA75, MPSA77 Darlington Transistors PNP Silicon Features • These are Pb-Free Devices* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit VCES -40 -60 Vdc VEBO -10 Vdc Collector Current - Continuous IC -500 mAdc Total Device Dissipation @ TA = 25°C

Contextual Info: PHILIPS INTERNATIONAL MPSA75 MPSA76 MPSA77 711002b 0042522 472 « P H I N SbE J> m PNP DARLINGTON TRANSISTOR T-Z 7 -2 1 PNP small-signal Darlington transistors, each in a plastic TO-92 envelope. NPN complementary types are MPSA25, 26, and 27. Q UICK REFERENCE D A TA

MPSA76

Abstract: MPSA75 MPSA77 ICES Darlington transistor to 92
Contextual Info: DATA SHEET MPSA75 MPSA76 MPSA77 PNP DARLINGTON TRANSISTOR TO-92 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MPSA75 series are silicon PNP Darlington Transistors, manufactured by the epitaxial planar process, designed for applications requiring extremely high gain.

Contextual Info: S AM S U N G SEMICONDUCTOR IME INC I 7^4142 G007373 fl | PNP EPITAXIAL 7 = *r^ 7 SILICON DARLINGTON TRANSISTOR MPSA75 DARLINGTON TRANSISTOR • Collector-Emitter Voltage: Vc*s=40V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

mpsa77

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistors P N P Silicon COLLECTOR 3 EMITTER 1 M A X IM U M R A T IN G S Rating Symbol MPSA75 MPSA77 Unit Collector-Emitter Voltage VCES -4 0 -60 Vdc Emitter-Base Voltage v EBO -10 Vdc 'C -500 Ade Pd 625 5.0

mpsa77

Abstract: MPS-A77
Contextual Info: ON Semiconductort Darlington Transistors MPSA75 MPSA77 PNP Silicon MAXIMUM RATINGS Rating Symbol MPSA75 MPSA77 Unit Collector–Emitter Voltage VCES –40 –60 Vdc Emitter–Base Voltage VEBO –10 Vdc Collector Current — Continuous IC –500 Adc Total Device Dissipation @ TA = 25°C

Contextual Info: ON Semiconductort Darlington Transistors MPSA75 MPSA77 PNP Silicon MAXIMUM RATINGS Rating Symbol MPSA75 MPSA77 Unit Collector–Emitter Voltage VCES –40 –60 Vdc Emitter–Base Voltage VEBO –10 Vdc Collector Current — Continuous IC –500 Adc Total Device Dissipation @ TA = 25°C

MPSA75

Abstract: MPS-A77
Contextual Info: ON Semiconductort Darlington Transistors MPSA75 MPSA77 PNP Silicon MAXIMUM RATINGS Rating Symbol MPSA75 MPSA77 Unit Collector −Emitter Voltage VCES −40 −60 Vdc Emitter −Base Voltage VEBO −10 Vdc Collector Current − Continuous IC −500 mAdc Total Device Dissipation @ TA = 25°C

MPSA75

Abstract: MPSA77
Contextual Info: MOTOROLA Order this document by MPSA75/D SEMICONDUCTOR TECHNICAL DATA Darlington Transistors MPSA75 MPSA77 PNP Silicon COLLECTOR 3 BASE 2 EMITTER 1 1 MAXIMUM RATINGS 2 Rating Symbol MPSA75 MPSA77 Unit Collector – Emitter Voltage VCES –40 –60 Vdc Emitter – Base Voltage

Contextual Info: MPSA75 MPSA76 MPSA77 SILICON PNP DARLINGTON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR MPSA75 series devices are silicon PNP Darlington transistors, manufactured by the epitaxial planar process, designed for applications requiring extremely high gain.

Contextual Info: b^E ]> • MPSA75 bb53T31 00 36 0 2 3 747 « A P X MPSA76 MPSA77 N AflER PHILIPS/DISCRETE y v . PNP DARLINGTON TRANSISTOR PNP small-signal Darlington transistors, each in a plastic TO-92 envelope. NPN complementary types are MPSA25, 26, and 27. QUICK REFERENCE DATA

Contextual Info: MPSA75 MPSA77 CASE 29-04, STYLE 1 TO-92 TO-226AA Rating MPSA77 Unit -6 0 Vdc Collector Symbol MPSA75 C o llector-E m itter Voltage VCES -4 0 Em itter-Base Voltage v EB0 - 10 C ollector C urrent — Continuous !C -5 0 0 Ade Total Device D issipation cii T a = 25°C

Contextual Info: MOTOROLA Order this document by MPSA75/D SEMICONDUCTOR TECHNICAL DATA Darlington Transistors MPSA75 MPSA77 PNP Silicon COLLECTOR 3 BASE 2 EMITTER 1 1 MAXIMUM RATINGS 2 Rating Symbol MPSA75 MPSA77 Unit Collector – Emitter Voltage VCES –40 –60 Vdc Emitter – Base Voltage

Contextual Info: MPSA75, MPSA77 Darlington Transistors PNP Silicon Features • These are Pb-Free Devices* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit VCES -40 -60 Vdc VEBO -10 Vdc Collector Current - Continuous IC -500 mAdc Total Device Dissipation @ TA = 25°C

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

MPS8093

Abstract: mps404
Contextual Info: ALLEGRO MICROSYSTEMS INC 8514019 SPRAGUE, 13 D • GS0M33Ô 00035^7 7 ■ ALGR 93D 03597 2 S E M I C O N D S / ICS T'Ql'Qb ' PLASTIC-CASE BIPOLAR TRANSISTORS PNP Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain ^CBO