MPSH11 Search Results

BC237

Abstract: MPSH10 502 mpsa42 npn transistor to-92
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA VHF/UHF Transistors MPSH10 NPN Silicon MPSH11 COLLECTOR 3 Motorola Preferred Devices 1 BASE 2 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 25 Vdc Collector – Base Voltage VCBO

Contextual Info: MPSH11 / MMBTH11 MPSH11 MMBTH11 C E C E TO-92 B B SOT-23 Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 10 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for

Contextual Info: SEMICONDUCTOR MPS6543 NPN RF Transistor T his device is designed for use as RF amplifiers, oscillators and m ultipliers with collector currents in the 100 |^A to 10 m A range. Sourced from Process 47. See MPSH11 for characteristics. Absolute Maximum RâtinÇjS

Contextual Info: S E :M i O O N D U C T O R MPSH11 SOT-23 Mark: 3G NPN RF Transistor This device is designed for com m on-em itter low noise am plifier and m ixer applications with collector currents in the 100 |^A to 10 m A range to 300 MHz, and low frequency drift com m on-base

Contextual Info: SEMICONDUCTOR tm MPS6543 . ;^C* C< \ e TO-92 ; NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 100 pA to 10 mA range. Sourced from Process 47. See MPSH11 for characteristics.

common collector amplifier circuit designing

Abstract: transistor mark l6 MMBTH11 MPSH11 transistor BF 245
Contextual Info: HEVICCNDUCTOR - MPSH11 NPN RF Transistor This device is designed for com m on-em itter low noise amplifier and m ixer applications with collector currents in the 100 ¡iA to 10 mA range to 300 MHz, and low frequency drift comm on-base VH F oscillator applications with high output levels for driving

Contextual Info: Small Signal RF/VHF/UHF Transistors Part No. Polarity VCEO V 2N5770 MPS5179 MPSH10 MPSH11 PN3563 PN918 NPN 15 12 25 25 15 15 fT Min. @ Max. (MHz) (MHz) 900 900 650 650 600 600 1800 2000 1500 1500 VCE & IC VCE IC Cob Max. (V) (mA) (pF) 6 10 10 10 - 8 5 4

transistor 26

Abstract: MMBTH11 MPSH11 Q100 Z-235 L1245 transistor t 270
Contextual Info: MPSH11 / MMBTH11 MPSH11 MMBTH11 C E C E TO-92 B B SOT-23 Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 10 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for

PSH10

Contextual Info: M PSH10* MPSH11* M A XIM U M RATINGS Symbol Value Unit C o lle ctor-E m itter V o ltage Rating v CEO 25 Vdc C ollector-Base V o ltage VCBO 30 Vdc Em itter-Base Voltage v EBO 3.0 Vdc Total Device D issipa tion a T ^ = 25°C Derate above 25°C PD 350 2.8 mW

Contextual Info: MPSH10 MPSH11 SILICON NPN RF TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR MPSH10 and MPSH11 are silicon NPN RF transistors manufactured by the epitaxial planar process and designed for low noise UHF/VHF amplifier and high output oscillator

MPSH10

Abstract: MPSH11 MPS-H10 MPSH10 H parameters
Contextual Info: MOTOROLA Order this document by MPSH10/D SEMICONDUCTOR TECHNICAL DATA VHF/UHF Transistors MPSH10 NPN Silicon MPSH11 COLLECTOR 3 Motorola Preferred Devices 1 BASE 2 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 25 Vdc

MPSH10

Abstract: UHF UHF Transistors
Contextual Info: MOTOROLA Order this document by MPSH10/D SEMICONDUCTOR TECHNICAL DATA VHF/UHF Transistors MPSH10 NPN Silicon MPSH11 COLLECTOR 3 Motorola Preferred Devices 1 BASE 2 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 25 Vdc

mpsh10

Abstract: NPN RF TRANSISTORS PSH10 MPS-H10 national MMBTH 30
Contextual Info: MPSH10/MMBTH10/MPSH11 /MMBTH11 a National Semiconductor MPSH10 MPSH 11 MMBTH10 MMBTH 11 / TO-9 2 T L /G /1 0 1 0 0 -5 T L /G /1 0 1 0 0 -3 NPN RF Transistors Electrical Characteristics T a = 25"C unless otherw ise noted Parameter Symbol Min Max Units OFF CHARACTERISTICS

MPSH11

Abstract: MPS-H11 transistor mark l6 MMBTH11 Q100 Z-235 Ohmite RF transistor x vs L1245 P4 transistor
Contextual Info: MPSH11 MMBTH11 C E C TO-92 BE SOT-23 B Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 10 mA range to 300 MHz, and low frequency drift common-base VHF oscillator applications with high output levels for driving

"UHF Transistors"

Abstract: MPSH10
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA VHF/UHF Transistors MPSHIO MPSH11 NPN Silicon COLLECTOR 3 M otorola Preferred Devices 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit C ollector-E m itter Voltage VCEO 25 Vdc C ollector-B ase Voltage VCBO 30 Vdc vebo

transistor C 245 b

Contextual Info: MPSH11 / MMBTH11 MPSH11 MMBTH11 C C B E TO-92 B SOT-23 E Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 mA to 10 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for

transistor s34

Abstract: MPSH11 MPS-H11
Contextual Info: è* Semiconductor MPSH11 I MMBTH11 D iscrete PO W ER & S ig n a l Technologies National MPSH11 SOT-23 M ark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 p A to

rf transistor mark code H1

Abstract: CBVK741B019 F63TNR MMBTH11 MPSH11 PN2222N Q100 Z-235 D3000
Contextual Info: MPSH11 / MMBTH11 MPSH11 MMBTH11 C E C B TO-92 E B SOT-23 Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 10 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for

ic nn 5198 k

Abstract: nn 5198 k Transistor C 5196 fcm 10.7 mhz transistor s34 ic nn 5198 r Transistor C 5198 MMBTH11 MPSH11 Q100
Contextual Info: I MMBTH11 Discrete P O W ER & S ig n a l Technologies National MPSH11 Semiconductor'“ MPSH11 NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 fiA to 10 mA range to 300 MHz, and low frequency drift common-base

Contextual Info: B iM E D N P U C T O R « MPSH11 MMBTH11 Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 pA to 10 mA range to 300 MHz, and low frequency drift common-base VHF oscillator applications with high output levels for driving

Contextual Info: MPSH10 MPSH11 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS L ID . ~~ TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR VHF/UHF TRANSISTOR ABSOLUTE MAXIMUM RATINGS at T aniW S X Symbol R ating Unit Collector-Base Voltage Vcbo 30 V Collector-Emitter Voltage

CBVK741B019

Abstract: F63TNR MMBTH11 MPSH11 PN2222N Q100 Z-235 transistor 26
Contextual Info: MPSH11 / MMBTH11 MPSH11 MMBTH11 C E C B TO-92 E B SOT-23 Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 10 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for

MPS-H11

Abstract: "UHF Transistors" MPSH11
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA VHF/UHF Transistors MPSHIO MPSH11 NPN Silicon COLLECTOR 3 Motorola Preferred Devices 2 EMITTER MAXIMUM RATINGS Symbol Value Unit C ollector-Em itter Voltage Rating v CEO 25 Vdc C ollector-Base Voltage VCBO 30 Vdc E m itte r- Base Voltage

MPS6543

Abstract: MPSH11
Contextual Info: MPS6543 C TO-92 EB NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 100 µA to 10 mA range. Sourced from Process 47. See MPSH11 for characteristics. Absolute Maximum Ratings* Symbol