MRF151 Search Results

MRF151G

Abstract: MRF151G hf amplifier MRF151G Voltage min-max AN211A motorola bipolar transistor data manual mosfet HF amplifier mrf151g 300 NIPPON CAPACITORS DC bias of FET arco capacitors
Contextual Info: MOTOROLA Order this document by MRF151G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF151G N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this

MRF1513 equivalent

Abstract: 2743021446 MRF1513 AN721 MRF1513T1 J524 AN211A AN215A Transistor J438 J182 transistor
Contextual Info: MOTOROLA Order this document by MRF1513/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1513T1 is designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF1517N Rev. 7, 6/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF1517NT1 Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF1513 Rev. 7, 5/2006 Replaced by MRF1513NT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.

Contextual Info: MOTOROLA Order this document by MRF1518/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1518T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband

MRF255 equivalent

Abstract: motorola mrf Motorola transistors MRF mrf5015 mrf184 MRF151G F2012 DU1230P uf2810p MRF255
Contextual Info: CROSS REFERENCE Click on part No. to retrieve data sheet . 5/22/2005 Motorola POLYFET PHILIPS POLYFET MA/COM PHI POLYFET MRF134 MRF136 MRF137 MRF141 MRF141G PRF134 PRF136 PRF137 SM401 SR401 BLF145 BLF147 BLF175 BLF177 BLF242 MRF148 MRF151 MRF151G SA741 SM341

Contextual Info: MRF151 VHF POWER MOSFET N-Channel Enhancement Mode DESCRIPTION: The ASI MRF151 is a gold metallized N-Channel Enhancement mode MOSFET intended for use in 50 Vdc large signal output to 200 MHz. PACKAGE STYLE .500 4L FLG .112x45° L A S FULL R FEATURES: D Ø.125 NOM.

MRF151G

Abstract: MRF151G hf amplifier testing of mosfet gain control rf amplifier circuit mrf151g RF TOROIDS Design Considerations
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF151G The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET . . . designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this

AN721

Abstract: J361 AN211A AN215A MRF1518T1 transistor j334 j327 transistor
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF1518/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor Freescale Semiconductor, Inc. N–Channel Enhancement–Mode Lateral MOSFET The MRF1518T1 is designed for broadband commercial and industrial

J-031

Abstract: AN211A AN215A AN721 MRF1511T1
Contextual Info: MOTOROLA Order this document by MRF1511/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1511T1 is designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband

0.5 W silicon zener diode

Abstract: TRIMMER capacitor 82 pF MRF151 mosfet 440 mhz MRF1518 AN211A AN215A AN721 MRF1518T1 MRF-151
Contextual Info: MOTOROLA Order this document by MRF1518/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1518T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband

2743021446

Abstract: j494 AN215A AN721 FM LDMOS freescale transistor A113 AN211A AN4005 EB212 MRF1513N
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF1513N Rev. 10, 2/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF1513NT1 Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFETs The MRF1517T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1518T1 is designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband

MHZ50

Contextual Info: Freescale Semiconductor Technical Data MRF1513 Rev. 6, 3/2005 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET MRF1513NT1 MRF1513T1 Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device

MRF1511

Contextual Info: Freescale Semiconductor Technical Data MRF1511 Rev. 3, 3/2005 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET MRF1511NT1 MRF1511T1 Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF1517N Rev. 4, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF1517NT1 Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device

5252 F 0911

Abstract: 5252 F mosfet 5252 F 0918 1030F
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MOSFET MRF151 Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this

MRF1518

Contextual Info: MOTOROLA Order this document by MRF1518/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1518T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband

Contextual Info: MOTOROLA Order this document by MRF1513/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1513T1 is designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF1518N Rev. 11, 6/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF1518NT1 Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device

AN721

Abstract: MRF1513NT1 A113 AN211A AN215A AN4005 EB212 MRF1513N FM LDMOS freescale transistor
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF1513N Rev. 11, 6/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF1513NT1 Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device

Contextual Info: Freescale Semiconductor Technical Data Rev. 2, 1/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF1511T1 The MRF1511T1 is designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband

Contextual Info: Freescale Semiconductor Technical Data Rev. 5, 1/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF1513T1 The MRF1513T1 is designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband