MRF5S21150 Search Results
MRF5S21150 Datasheets (12)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
---|---|---|---|---|---|---|---|
MRF5S21150 |
![]() |
RF Power Field Effect Transistor | Original | 405.63KB | 12 | ||
MRF5S21150 |
![]() |
RF POWER FIELD EFFECT TRANSISTORS | Original | 565.78KB | 12 | ||
MRF5S21150HR3 |
![]() |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs | Original | 387.37KB | 12 | ||
MRF5S21150HR5 |
![]() |
RF FETs, Discrete Semiconductor Products, MOSFET RF N-CHAN 28V 33W NI-880 | Original | 12 | |||
MRF5S21150HSR3 |
![]() |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs | Original | 387.37KB | 12 | ||
MRF5S21150HSR5 |
![]() |
RF FETs, Discrete Semiconductor Products, MOSFET RF N-CHAN 28V 33W NI-880S | Original | 12 | |||
MRF5S21150R3 |
![]() |
RF Power Field Effect Transistor | Original | 405.63KB | 12 | ||
MRF5S21150R3 |
![]() |
RF POWER FIELD EFFECT TRANSISTORS | Original | 565.77KB | 12 | ||
MRF5S21150S |
![]() |
RF Power Field Effect Transistor | Original | 405.63KB | 12 | ||
MRF5S21150S |
![]() |
RF POWER FIELD EFFECT TRANSISTORS | Original | 565.77KB | 12 | ||
MRF5S21150SR3 |
![]() |
RF Power Field Effect Transistor | Original | 405.63KB | 12 | ||
MRF5S21150SR3 |
![]() |
RF POWER FIELD EFFECT TRANSISTORS | Original | 565.78KB | 12 |
MRF5S21150 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21150/D SEMICONDUCTOR TECHNICAL DATA MRF5S21150R3 and MRF5S21150SR3 replaced by MRF5S21150HR3 and MRF5S21150HSR3. H suffix indicates lower thermal resistance package. MRF5S21150R3 RF Power Field Effect Transistors MRF5S21150SR3 |
Original |
MRF5S21150/D MRF5S21150R3 MRF5S21150SR3 MRF5S21150HR3 MRF5S21150HSR3. MRF5S21150R3 MRF5S21150SR3 | |
Contextual Info: MOTOROLA Order this document by MRF5S21150/D SEMICONDUCTOR TECHNICAL DATA MRF5S21150 RF Power Field Effect Transistors MRF5S21150R3 N–Channel Enhancement–Mode Lateral MOSFETs MRF5S21150S Designed for W–CDMA base station applications with frequencies from 2110 |
Original |
MRF5S21150/D MRF5S21150 MRF5S21150R3 MRF5S21150S MRF5S21150SR3 MRF5S21150SR3 | |
J1103
Abstract: J294 MRF5S21150H MRF5S21150HR3 MRF5S21150HSR3 TAJE226M035R 465B AN1955 J966
|
Original |
MRF5S21150H MRF5S21150HR3 MRF5S21150HSR3 MRF5S21150HR3 J1103 J294 MRF5S21150H MRF5S21150HSR3 TAJE226M035R 465B AN1955 J966 | |
465B
Abstract: AN1955 MRF5S21150 MRF5S21150R3 MRF5S21150SR3 TAJE226M035R vishay mosfet MTBF
|
Original |
MRF5S21150/D MRF5S21150R3 MRF5S21150SR3 MRF5S21150R3 465B AN1955 MRF5S21150 MRF5S21150SR3 TAJE226M035R vishay mosfet MTBF | |
Contextual Info: Freescale Semiconductor Technical Data Rev. 0, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21150HR3 MRF5S21150HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L |
Original |
MRF5S21150HR3 MRF5S21150HSR3 | |
vishay mosfet MTBF
Abstract: J29-4 465B AN1955 MRF5S21150 MRF5S21150HR3 MRF5S21150HSR3 MRF5S21150R3 MRF5S21150SR3
|
Original |
MRF5S21150/D MRF5S21150R3 MRF5S21150SR3 MRF5S21150HR3 MRF5S21150HSR3. MRF5S21150R3 MRF5S21150SR3 vishay mosfet MTBF J29-4 465B AN1955 MRF5S21150 MRF5S21150HSR3 | |
Contextual Info: Freescale Semiconductor Technical Data MRF5S21150H Rev. 0, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21150HR3 MRF5S21150HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L |
Original |
MRF5S21150H MRF5S21150HR3 MRF5S21150HSR3 | |
Contextual Info: Freescale Semiconductor Technical Data MRF5S21150H Rev. 1, 5/2006 RF Power Field Effect Transistors MRF5S21150HR3 MRF5S21150HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L |
Original |
MRF5S21150H MRF5S21150HR3 MRF5S21150HSR3 MRF5S21150HR3 | |
Contextual Info: Freescale Semiconductor Technical Data MRF5S21150H Rev. 0, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21150HR3 MRF5S21150HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L |
Original |
MRF5S21150H MRF5S21150HR3 MRF5S21150HSR3 | |
J294
Abstract: TAJE226M035R 465B AN1955 MRF5S21150HR3 MRF5S21150HSR3 j246
|
Original |
MRF5S21150H MRF5S21150HR3 MRF5S21150HSR3 MRF5S21150HR3 J294 TAJE226M035R 465B AN1955 MRF5S21150HSR3 j246 | |
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF5S21150 RF Power Field Effect Transistors MRF5S21150R3 N–Channel Enhancement–Mode Lateral MOSFETs MRF5S21150S Designed for W–CDMA base station applications with frequencies from 2110 MRF5S21150SR3 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicaThe RF MOSFET Line |
Original |
MRF5S21150 MRF5S21150R3 MRF5S21150S MRF5S21150SR3 150R3 | |
J294
Abstract: 465B MRF5S21150 MRF5S21150R3 MRF5S21150S MRF5S21150SR3 TAJE226M035R
|
Original |
MRF5S21150/D MRF5S21150 MRF5S21150R3 MRF5S21150S MRF5S21150SR3 MRF5S21150 MRF5S21150R3 MRF5S21150S J294 465B MRF5S21150SR3 TAJE226M035R | |
Contextual Info: MOTOROLA Order this document by MRF5S21150/D SEMICONDUCTOR TECHNICAL DATA MRF5S21150 RF Power Field Effect Transistors MRF5S21150R3 N–Channel Enhancement–Mode Lateral MOSFETs MRF5S21150S Designed for W–CDMA base station applications with frequencies from 2110 |
Original |
MRF5S21150/D MRF5S21150 MRF5S21150R3 MRF5S21150S MRF5S21150SR3 MRF5S21150SR3 | |
Contextual Info: MOTOROLA Order this document by MRF5S21150/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S21150R3 N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21150SR3 Designed for W- CDMA base station applications with frequencies from 2110 |
Original |
MRF5S21150/D MRF5S21150R3 MRF5S21150SR3 MRF5S21150SR3 | |
|
|||
stripline directional couplers
Abstract: MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1
|
Original |
SG1009Q32005 MMM6025 MC13820 MRF377HR3, MRF377HR5 MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, stripline directional couplers MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1 | |
TRANSISTOR REPLACEMENT GUIDE
Abstract: FS Oncore hf modem ofdm bts 2140 1b data sheet ISO 1302 uhf linear amplifier module linear amplifier 470-860 amplifier mrf247 class AB hf bipolar FM LDMOS freescale transistor
|
Original |
SG1009Q42004 MRF5S9070NR1, MRF5S9100MR1, MRF5S9100MBR1, MRF5S9100NR1, MRF5S9100NBR1, MRF5S9101MR1, MRF5S9101MBR1, MRF5S9101NR1, MRF5S9101NBR1, TRANSISTOR REPLACEMENT GUIDE FS Oncore hf modem ofdm bts 2140 1b data sheet ISO 1302 uhf linear amplifier module linear amplifier 470-860 amplifier mrf247 class AB hf bipolar FM LDMOS freescale transistor | |
2a258 transistor
Abstract: Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index
|
Original |
DL110/D 2a258 transistor Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index | |
very simple walkie talkie circuit diagram
Abstract: blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23
|
Original |
TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN very simple walkie talkie circuit diagram blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23 | |
filter for GPS spice
Abstract: BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode
|
Original |
RF20105 67SiGe JESD204A-DACADC JESD204A- AEC100 BFR90 BFQ33 TFF1004HN JESD204A BLF578) filter for GPS spice BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode | |
MPF102 spice model
Abstract: BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H
|
Original |
te121 MPF102 spice model BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H | |
double TRANSISTOR SMD MARKING CODE mc
Abstract: walkie talkie circuit diagram very simple walkie talkie circuit diagram smd TRANSISTOR code marking 8K smd m5 transistor 6-pin walkie talkie Transceiver IC mesfet lnb toshiba smd marking code transistor blf574 BLF578
|
Original |
TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN double TRANSISTOR SMD MARKING CODE mc walkie talkie circuit diagram very simple walkie talkie circuit diagram smd TRANSISTOR code marking 8K smd m5 transistor 6-pin walkie talkie Transceiver IC mesfet lnb toshiba smd marking code transistor blf574 BLF578 | |
power transistors table
Abstract: MW6S010NR1 mrfe6s9060n MHW6342TN Motorola Microwave power Transistor "RF high power Amplifier" MRF6V2300N MRFG35010R1 MRF6P23190HR6 MRF373 PUSH PULL
|
Original |
||
Contextual Info: MOTOROLA Available at: Available at http://www.motorola.com/rf, Go to Tools SEMICONDUCTOR TECHNICAL DATA RF Reference Design Library The RF Sub–Micron MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs DEVICE CHARACTERISTICS From Device Data Sheet |
Original |
MRF5S21150 MRF5S21150R3 MRF5S21150S MRF5S21150SR3 RDMRF5S21150UMTS | |
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Available at: Available at http://www.motorola.com/rf, Go to Tools SEMICONDUCTOR TECHNICAL DATA RF Reference Design Library The RF Sub–Micron MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs |
Original |
MRF5S21150 MRF5S21150R3 MRF5S21150S MRF5S21150SR3 RDMRF5S21150UMTS |