MRFG35010R1 Search Results
MRFG35010R1 Price and Stock
NXP Semiconductors MRFG35010R1RF MOSFET PHEMT FET 12V NI360 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MRFG35010R1 | Reel | 500 |
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MRFG35010R1 Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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MRFG35010R1 |
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3.5GHZ 10W GAAS NI360HF | Original | 371.44KB | 11 |
MRFG35010R1 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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IRL 724 N
Abstract: MRFG35010 MRFG35010AR1 MRFG35010R1 MTP23P06V RO4350 motorola diode marking 0103
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MRFG35010 MRFG35010R1 IRL 724 N MRFG35010 MRFG35010AR1 MRFG35010R1 MTP23P06V RO4350 motorola diode marking 0103 | |
INF 740
Abstract: Motorola 581 c 1685 transistor 3224W-1-502E 901 704 16 08 55 DIODE Z1 04 833 motorola IRL 724 N Marking Z7 Gate Driver MRFG35010R1 MRFG35010
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MRFG35010 MRFG35010R1 MRFG35010AR1. MRFG35010R1 360HF INF 740 Motorola 581 c 1685 transistor 3224W-1-502E 901 704 16 08 55 DIODE Z1 04 833 motorola IRL 724 N Marking Z7 Gate Driver MRFG35010 | |
POT 5KContextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35010 Rev. 7, 5/2006 Gallium Arsenide PHEMT MRFG35010R1 MRFG35010R5 RF Power Field Effect Transistor Designed for WLL/MMDS or UMTS driver applications with frequencies from 1800 to 3600 MHz. Device is unmatched and is suitable for use in Class AB or |
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MRFG35010 MRFG35010R1 MRFG35010R5 MRFG35010 POT 5K | |
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35010 Rev. 9, 1/2008 MRFG35010R1 replaced by MRFG35010AR1. MRFG35010R1 Gallium Arsenide PHEMT RF Power Field Effect Transistor 3.5 GHz, 10 W, 12 V POWER FET GaAs PHEMT • Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts, |
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MRFG35010 MRFG35010R1 MRFG35010AR1. MRFG35010R1 | |
DIODE 709 1334Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35010 Rev. 8, 6/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35010R1 Designed for WLL/MMDS or UMTS driver applications with frequencies from 1800 to 3600 MHz. Device is unmatched and is suitable for use in Class AB or |
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MRFG35010 MRFG35010R1 MRFG35010 DIODE 709 1334 | |
power transistors table
Abstract: MW6S010NR1 mrfe6s9060n MHW6342TN Motorola Microwave power Transistor "RF high power Amplifier" MRF6V2300N MRFG35010R1 MRF6P23190HR6 MRF373 PUSH PULL
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