MSM5141 Search Results

bq785

Abstract: 20-P-300-1 MSM514100DL ZIP20-P-400-1 msm514100d
Contextual Info: O K I Semiconductor MSM5141 OOP/PL_ E2G0022-17-41 4,194,304-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514100D/DL is a 4,194,304-word x 1-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM514100D/DL achieves high integration, high-speed operation, and

transistor sl 431

Abstract: ZIP40-P-475
Contextual Info: O K I Sem iconductor M S M 5 1 4 1 9 0 / S L _ 262,144-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514190/SL is a new generation Dynamic RAM organized as 262,144-word x 18-bit configuration. The technology used to fabricate MSM51419 0 /SL is OKI's CMOS silicon gate process technology.

T02I

Abstract: 26-PIN ZIP20-P-400 514100B
Contextual Info: O K I Semiconductor MSM5 1 4 1 OOB/BL 4,194,304-Word x 1-Bit DYNAMIC RAM: FAST PAGE MODE TYPE DESCRIPTION The MSM514100B/BL is a new generation dynamic RAM organized as 4,194,304-word x 1-bit. The technology used to fabricate the MSM514100B/BL is OKI's CMOS silicon gate process technology.

a10u

Abstract: B724e
Contextual Info: O K I Semiconductor MSM514101B/BL 4,194,304-Word x 1-Bit DYNAMIC RAM : NIBBLE MODE TYPE DESCRIPTION The MSM514101B/BL is a new generation dynamic RAM organized as 4,194,304-word x 1-bit. The technology used to fabricate the MSM514101B/BL is OKI's CMOS silicon gate process technology.

transistor a7g

Abstract: a105g MSM temperature spec til 31a MSM514101-10 MSM514101-70 MSM514101-80
Contextual Info: SÔE T> • h?2424D DDIHT?! Tb3 « O K I J 0 « I SEMICONDUCTOR GROUP O K I s e m ic o n d u c to r - r - H t - z s - i s M S M 514101 4,194,304-Word x 1-Bit DYNAMIC RAM: NIBBLE MODE TYPE GENERAL DESCRIPTION The MSM514101 is a new generation dynamic RAM organized as 4,194,304-word x1 -bit.

Contextual Info: O K I semiconductor MSM514102_ 4,194,304-Word x 1-Bit DYNAM IC RAM: STATIC CO LUM N M O DE TYPE GENERAL DESCRIPTION The MSM514102 is a new generation dynamic RAM organized as 4,194,304-word x 1-bit. The technology used to fabricate the MSM514102 is OKI's CMOS silicon gate process technology.

diagram of hi 3520

Contextual Info: O K I Semiconductor MSC23408B/BL-XXPS8 4,194,304-Word by 8-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI MSC23408B/BL-xxDS8 is a fully decoded 4,194,304-w ord x 8-bit CMOS Dynamic Random Access Memory M odule composed of eight 4-Mb DRAMs in SOJ MSM514100B/BL packages m ounted

Contextual Info: O K I semiconductor M SM 514101 4,194,304-Word x 1-Bit DYNAMIC RAM: NIBBLE MODE TYPE GENERAL DESCRIPTION The MSM514101 is a new generation dynamic RAM organized as 4,194,304-word x1 -bit. The technology used to fabricate the MSM514101 is OKI’s CMOS silicon gate process tech­

Contextual Info: O K I semiconductor MSM514100_ 4,194,304-Word x 1-Bit DYNAMIC RAM: FAST PAGE MODE TYPE G EN ERA L DESCRIPTION The MSM514100 ¡5 a new generation dynamic RAM organized as 4,194,304-word x 1-bit. The technology used to fabricate the MSM514100 is OKI's CMOS silicon gate process technology.

M514100

Abstract: E130155
Contextual Info: O K I semiconductor MSM5141OOA/AL_ 4,194,304-Word x 1-Bit DYNAMIC RAM: FAST PAGE MODE TYPE G E N E R A L D ESC R IP T IO N The M SM 514100A /A L is a n e w g e n e ra tio n d ynam ic RAM o rg an ized as 4,19 4,30 4-w o rd x 1-bit. T h e te c h n o lo g y used to fa b r ic a te th e M SM 5 1 4 1 0 0 A /A L is O K I's CM O S silic o n g a te p ro cess

Contextual Info: O K I Semiconductor MSM5141 OOP/PL_ E 2G 0 02 2-1 7-41 4,194,304-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514100D/DL is a 4,194,304-word x 1-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM514100D/DL achieves high integration, high-speed operation, and

Contextual Info: O K I Semiconductor MSM5141OOB/BL 4,194,304-Word x 1-Bit DYNAMIC RAM: FAST PAGE MODE TYPE DESCRIPTION The MSM514100B/BL is a new generation dynamic RAM organized as 4,194,304-word x 1-bit. The technology used to fabricate the MSM514100B/BL is OKI's CMOS silicon gate process technology.

Contextual Info: O K I Semiconductor MSM5 1 4 1 90/SL_ 262,144-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514190/SL is a new generation Dynamic RAM organized as 262,144-word x 18-bit configuration. The technology used to fabricate MSM514190/SL is OKI's CMOS silicon gate process technology.

26-PIN

Abstract: MSM514 ZIP20-P-400
Contextual Info: O K I Semiconductor MSM514101 B/BL 4,194,304-Word x 1-Bit DYNAMIC RAM : NIBBLE MODE TYPE DESCRIPTION The MSM514101B/BL is a new generation dynam ic RAM organized as 4,194,304-word x 1-bit. The technology used to fabricate the MSM514101B/BL is OKI's CMOS silicon gate process technology.

Contextual Info: O K I Semiconductor MSC23409B/BL-XXDS9 4,194,304-Word by 9-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI MSC23409B/BL-xxDS9 is a fully decoded 4,194,304-word x 9-bit CMOS Dynamic Random Access Memory Module composed of nine 4-Mb DRAMs in SOJ MSM514100B/BL packages, mounted

Contextual Info: O K I Semiconductor MSM514100C/CL 4,194,304-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 514100C /C L is a 4 , 1 9 4 ,3 0 4 -w o r d * 1-bit dynam ic RAM fabricated in OKI's C M O S silicon gate technology. The M SM 514100C /C L achieves high integration, high-speed operation, and lowpow er consum ption due to quadruple polysilicon single m etal CM O S. The M SM 514100C /C L is

Contextual Info: O K I Semiconductor MSM514170A/ASL 262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514170A/ASL is a 262,144-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM514170A/ASLachieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon single metal CMOS. The MSM514170A/ASL is

Contextual Info: O K I Semiconductor MSM514100A/AL 4,194,304-Word x 1-Bit D Y N A M IC RA M : FAST PAG E M O D E TYPE DESCRIPTION The MSM514100A/AL is a new generation dynamic RAM organized as 4,194,304-word x 1-bit. The technology used to fabricate the MSM514100A/AL is OKI's CMOS silicon gate process technology.

Contextual Info: O K I semiconductor MSM514101A/AL 4,194,304-Word x 1-Bit DYNAMIC RAM: NIBBLE MODE TYPE GENERAL DESCRIPTION The M S M 514101A /A L is a new generation dynamic RAM organized as 4,194,304-w ord x 1 bit. The technology used to fabricate the M SM 514101A /A L is OKI's C M O S silicon gate

Contextual Info: O K I Semiconductor MSC23836-XXBS24/DS24 PirelSow:^^ 8,388,608-Word by 36-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI MSC23836-xxBS24/DS24 is a fully decoded 8,388,608-word x 36-bit CMOS Dynamic Random Access Memory Module composed of sixteen 16-Mb DRAMs in SOJ MSM5117400 packages and eight 4Mb DRAMs in SOJ (MSM514100B) packages mounted with twenty-four 0.2|j.F decoupling capacitors on a

M514170

Abstract: ZIP40-P-475
Contextual Info: O K I Semiconductor MSM5 14170 A/ASL 262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514170A/ASL is a new generation Dynamic RAM organized as 262,144-word x 16-bit configuration. The technology used to fabricate the MSM514170A/ASL is OKI's CMOS silicon gate process

met esso

Abstract: DS3660
Contextual Info: O K I Semiconductor MSC23436B-XXBS36/DS36 4,194,304-Word by 36-Bit DRam Module: Fast Page Mode DESC R IP TIO N The OKI M SC 23436B-xxBS36/D S36 is a fully decoded 4,194,304-word x 36-bit CM OS Dynamic Random Access Memory M odule composed of thirty-six 4-Mb DRAMs in SOJ MSM514100B packages mounted

Contextual Info: O K I Semiconductor MSM514170A/ASL 262,144-Word x 16-Bit DYN A M IC RA M : FAST PAG E M O D E TYPE DESCRIPTION The MSM514170A/ASL is a 262,144-word x 16-bit dynamic RAM fabricated in OKI’s CMOS silicon gate technology. The MSM514170A/ASL achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon single metal CMOS. The MSM514170A/ASL is

Contextual Info: O K I Semiconductor MSM5141 OOP/PL_ E2G0022-17-41 4,194,304-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514100D/DL is a 4,194,304-word x 1-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM514100D/DL achieves high integration, high-speed operation, and