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MT28F642D18 Price and Stock

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Micron Technology Inc MT28F642D18FN-804TETES FLASH, 4MX16, 80NS, PBGA59
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	MT28F642D18FN-804TETES		36			1 $17.55 10 $17.55 100 $16.875 1000 $16.875 10000 $16.875	Buy Now

MT28F642D18 Datasheets (13)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MT28F642D18		Micron	FLASH MEMORY		Original	PDF
MT28F642D18FH-705BET		Micron	FLASH MEMORY		Original	PDF
MT28F642D18FH-705TET		Micron	FLASH MEMORY		Original	PDF
MT28F642D18FH-804BET		Micron	FLASH MEMORY		Original	PDF
MT28F642D18FH-804TET		Micron	FLASH MEMORY		Original	PDF
MT28F642D18FN-704BET		Micron	2Meg x 16 40MHz async/page/burst flash memory		Original	PDF
MT28F642D18FN-704TET		Micron	2Meg x 16 40MHz async/page/burst flash memory		Original	PDF
MT28F642D18FN-705BET		Micron	2Meg x 16 50MHz async/page/burst flash memory		Original	PDF
MT28F642D18FN-705TET		Micron	2Meg x 16 50MHz async/page/burst flash memory		Original	PDF
MT28F642D18FN-804BET		Micron	2Meg x 16 40MHz async/page/burst flash memory		Original	PDF
MT28F642D18FN-804TET		Micron	2Meg x 16 40MHz async/page/burst flash memory		Original	PDF
MT28F642D18FN-805BET		Micron	2Meg x 16 50MHz async/page/burst flash memory		Original	PDF
MT28F642D18FN-805TET		Micron	2Meg x 16 50MHz async/page/burst flash memory		Original	PDF

MT28F642D18 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
fw912 Abstract: MT28F642D18 MT28F642D20 fw911 FY912 fw905 Text: ADVANCE‡ 4 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F642D18 MT28F642D20 Low Voltage, Extended Temperature 0.18µm Process Technology FEATURES PIN ASSIGNMENT 59-Ball FBGA • Single device supports asynchronous, page, and burst operations • Flexible dual-bank architecture	Original	PDF	MT28F642D18 MT28F642D20 59-Ball MT28F642D18 MT28F642D20 fw912 fw911 FY912 fw905
fw912 Abstract: MT28F642D18 MT28F642D20 Text: ADVANCE‡ 4 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F642D18 MT28F642D20 Low Voltage, Extended Temperature 0.18µm Process Technology FEATURES PIN ASSIGNMENT 59-Ball FBGA • Single device supports asynchronous, page, and burst operations • Flexible dual-bank architecture	Original	PDF	MT28F642D18 MT28F642D20 59-Ball MT28F642D18 MT28F642D20 fw912
FW912 Abstract: No abstract text available Text: 4 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F642D18 MT28F642D20 Low Voltage, Extended Temperature 0.18µm Process Technology FEATURES PIN ASSIGNMENT 59-Ball FBGA • Single device supports asynchronous, page, and burst operations • Flexible dual-bank architecture	Original	PDF	MT28F642D18 MT28F642D20 FW912
fw912 Abstract: fw911 FX912 FY912 FY-912 FX911 Text: ADVANCE‡ 4 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F642D18 MT28F642D20 Low Voltage, Extended Temperature 0.18µm Process Technology FEATURES PIN ASSIGNMENT 59-Ball FBGA • Single device supports asynchronous, page, and burst operations • Flexible dual-bank architecture	Original	PDF	MT28F642D18 MT28F642D20 80blocks fw912 fw911 FX912 FY912 FY-912 FX911