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    MT2D18 Search Results

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    MT2D18 Price and Stock

    Micron Technology Inc MT2D18M-7

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    Bristol Electronics MT2D18M-7 144
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    Quest Components MT2D18M-7 680
    • 1 $23.508
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    • 100 $23.508
    • 1000 $17.631
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    MT2D18M-7 115
    • 1 $15.75
    • 10 $15.75
    • 100 $12.25
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    MT2D18M-7 66
    • 1 $16.8
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    MT2D18M-7 43
    • 1 $18.9
    • 10 $16.8
    • 100 $15.54
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    MT2D18M-7 32
    • 1 $18.9
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    Micron Technology Inc MT2D18M-6

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MT2D18M-6 167
    • 1 $20.52
    • 10 $20.52
    • 100 $15.96
    • 1000 $14.592
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    Others MT2D18M-7

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    Chip 1 Exchange MT2D18M-7 7
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    MT2D18 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MT2D18M-6 Micron 1 MEG x 8 DRAM MODULE Original PDF
    MT2D18M-7 Micron 1 MEG x 8 DRAM MODULE Original PDF

    MT2D18 Datasheets Context Search

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    FPM DRAM 30-pin SIMM

    Abstract: 30 pin simm dram module 30 pin FPM DRAM 30-pin 30-pin simm memory "30 pin simm" MT2D18M-6 30-pin SIMM
    Text: OBSOLETE MT2D18 1 MEG x 8 DRAM MODULE DRAM MODULE 1 MEG x 8 1 MEGABYTE, 5V, FAST PAGE MODE FEATURES • JEDEC- and industry-standard pinout in a 30-pin, single-in-line memory module SIMM • High-performance CMOS silicon-gate process • Single 5V ±10% power supply


    Original
    PDF MT2D18 30-pin, 450mW 024-cycle 30-Pin FPM DRAM 30-pin SIMM 30 pin simm dram module 30 pin FPM DRAM 30-pin 30-pin simm memory "30 pin simm" MT2D18M-6 30-pin SIMM

    Untitled

    Abstract: No abstract text available
    Text: fUIICRON DRAM _ . . - . _ _ Ä 1 MEG X 8 1 MEG x 8 FAST-PAGE-MODE _ MT2D18 DRAM MODULE d ra m MT2D18 LOW POWER, FY T F M n P n RF EXTENDED REFRESH (MT2D18 L) M O D U LE • ■ I V / 1 ^ W ^ I— FEATURES • Industry-standard pinout in a 30-pin, single-in-line


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    PDF MT2D18 MT2D18) MT2D18 30-pin, 450mW 024-cycle 128ms

    FPM DRAM 30-pin SIMM

    Abstract: T2D18
    Text: I^ IIC n D N lEG DRAM MODULE X 8 MT2D18 DRAM MODULE 1 MEG x 8 1 MEGABYTE, 5V, FAST PAGE MODE FEATURES • JEDEC- and industry-standard pinout in a 30-pin, single-in-line m emory m odule SIMM • High-perform ance CM OS silicon-gate process • Single 5V ±10% power supply


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    PDF MT2D18 30-pin, 024-cycle 30-Pin FPM DRAM 30-pin SIMM T2D18

    T2D19

    Abstract: No abstract text available
    Text: M IC R O N MT2D18 1 MEG X 8 DRAM MODULE I 1 MEG X 8 DRAM DRAM MODULE FAST PAGE MODE FEATURES OPTIONS MARKING Timing 60ns access 70ns access 80ns access -6 -7 -8 Packages Leadless 30-pin SIMM M Part Number Example: MT2D18M-6 PIN ASSIGNMENT Top View 30-Pin SIMM


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    PDF MT2D18 30-pin MT2D18M-6 DG113SQ T2D19

    T2D18

    Abstract: No abstract text available
    Text: I^ IIC R O IS I 1 MEG 1 MEG DRAM MODULE X X MT2D18 8 DRAM M ODULE 8 DRAM FAST PAGE MODE FEATURES • Industry-standard pinout in a 30-pin, single-in-line memory module • High-perform ance CM OS silicon-gate process • Single 5V +10% power supply • Low power, 6mW standby; 450mW active, typical


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    PDF MT2D18 30-pin, 450mW 024-cycle 30-Pin MT2018 T2D18

    Untitled

    Abstract: No abstract text available
    Text: MT2D18 1 MEG X 8 DRAM MODULE M IC R O N 1 MEG DRAM MODULE X8 DRAM FAST PAGE MODE MT2D18 LOW POWER, EXTENDED REFRESH (MT2D18 L) FEATURES • Industry standard pinout in a 30-pin, single-in-line memory module • High-performance, CMOS silicon-gate process


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    PDF MT2D18 MT2D18) MT2D18 30-pin, 450mW 024-cycle 128ms 400jiA I25ps

    DM-01

    Abstract: Techno RC
    Text: MT2D18 1 MEG x 8 DRAM MODULE I^ IC R O N REFRESH _ Returning RAS and CAS HIGH terminates a m emory cycle and decreases chip current to a reduced standby level. A lso, the chip is preconditioned for the next cycle during the RAS HIGH time. M emory cell data is retained in its


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    PDF MT2D18 T4C4001JDJ MT2Q18 DM-01 Techno RC

    30-pin

    Abstract: No abstract text available
    Text: |V |IC = R O N 1 MEG DRAM MODULE X 8 MT2D18 DRAM MODULE 1 MEG X 8 DRAM FAST PAGE MODE MT2D18 LOW POWER, EXTENDED REFRESH (MT2D18 L) FEATURES PIN ASSIGNMENT (Top View) • H ig h -p erfo rm a n ce, C M O S silico n -g a te p ro cess • Sin gle 5V ± 1 0 % p o w er sup p ly


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    PDF MT2D18 024-cy 024-cycle MT2O10 30-pin

    MT4C4001

    Abstract: CC3220
    Text: I^ IIC Z R O N 1 MEG 1 MEG DRAM MODULE X X 8 MT2D18 DRAM MODULE 8 DRAM FAST-PAGE-MODE MT2D18 LOW POWER, EXTENDED REFRESH (MT2D18 L) FEATURES • Industry-standard pinout in a 30-pin, single-in-line memory module • High-performance CMOS silicon-gate process


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    PDF MT2D18 30-pin, 450mW 024-cycle 128ms MT2D18) 30-Pin MT4C4001 CC3220

    Untitled

    Abstract: No abstract text available
    Text: NICRON SEMICONDUCTOR INC b3E » MICRON □ R A M 1 M E G _ U U blllSMT 0007*110 OflT « U R N 1 MEG x 8 X 8 MT2D18 DRAM MODULE D R A M FAST-PAGE-MODE (MT2D18 l o w p o w e r, F EXTENDED X T F M D F D RE REFRESH (MT2D18 L) MODULE IV I V / U • U FEATURES


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    PDF MT2D18 MT2D18) MT2D18 30-pin, 450mW 024-cycle

    Untitled

    Abstract: No abstract text available
    Text: niCRON TECHNOLOGY INC SSE D b l l l S 1*1? OODMbS? bTS M T2D18 1 MEG X 8 DRAM M O DULE MICRON • IMRN TECHNOLOGY. INC. -\5 £ DRAM MODULE 1 MEG X8 DRAM FAST PAGE MODE MT2D18 LOW POWER, EXTENDED REFRESH (MT2D18 L) FEATURES • Industry standard pinout in a 30-pin, single-in-line


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    PDF T2D18 MT2D18) MT2D18 30-pin, 450mW 024-cycle CYCLE28 MT2D16 MT2D18

    Untitled

    Abstract: No abstract text available
    Text: •«»•gì gl- MICRON TECHNOLOGY INC »Min i1,‘i-,.1j, Éinttlr^rirrr- BflE D bill 54*5 00Q231S 4 rr? T*’ . IMRN ■"* 1 MEG DRAM MODULE X 8 DRAM FAST PAGE MODE • Industry standard pinout in a 30-pin, single-in-line memory module • High-performance, CMOS silicon gate process


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    PDF 00Q231S 30-pin, 450mW 024-cycle T-46-23-17