MT3S11T Search Results

Contextual Info: MT6L11FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L11FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 MT3S11T MT3S11FS Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector- base voltage VCBO

Contextual Info: MT6L63FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L63FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. TESM(fSM) mold products Q2 MT3S07T MT3S11T (MT3S07FS)

MT3S11T

Contextual Info: MT3S11T TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S11T Unit: mm VHF~UHF Band Low-Noise Amplifier Applications VHF~UHF Band Oscillator Applications • • Superior performance in oscillator applications. Superior noise characteristics 2 : NF = 2.4 dB, |S21e| = 3.5 dB f = 2 GHz

VHF-UHF Band Low Noise Amplifier

Abstract: IC vhf/uhf Amplifier transistor amplifier VHF/UHF MT3S11T
Contextual Info: MT3S11T TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S11T Unit: mm VHF~UHF Band Low-Noise Amplifier Applications VHF~UHF Band Oscillator Applications • • Superior performance in oscillator applications. Superior noise characteristics : NF = 2.4 dB, |S21e|2 = 3.5 dB f = 2 GHz

MT3S06FS

Abstract: MT3S06T MT3S11FS MT3S11T MT6L68FS
Contextual Info: MT6L68FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L68FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. MT3S06T MT3S11T TESM(fSM) mold products (MT3S06FS)

MT3S07FS

Abstract: MT3S07T MT3S11FS MT3S11T MT6L63FS
Contextual Info: MT6L63FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L63FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. Q2 MT3S07T MT3S11T (MT3S07FS) (MT3S11FS) 2 5 3 4 0.15±0.05

MT3S07FS

Abstract: MT3S07T MT3S11FS MT3S11T MT6L63FS
Contextual Info: MT6L63FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L63FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. Q2 MT3S07T MT3S11T (MT3S07FS) (MT3S11FS) 2 5 3 4 0.15±0.05

MT3S11T

Contextual Info: MT3S11T 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 MT3S11T ○ VHF~UHF 低雑音増幅用 単位: mm • OSC 用途に優れています。 • 雑音特性が優れています。 : NF = 2.4 dB⎪S21e⎪2 = 3.5 dB f = 2 GHz

Contextual Info: MT6L68FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L68FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. MT3S06T MT3S11T TESM(fSM) mold products (MT3S06FS)

Contextual Info: MT6L11FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L11FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 MT3S11T MT3S11FS Corresponding three-pin products:TESM(fSM) mold products 6 2 5 3 4 +0.02 Q1/Q2 1 0.48 -0.04

MT3S11T

Contextual Info: MT3S11T TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S11T Unit: mm VHF~UHF Band Low-Noise Amplifier Applications VHF~UHF Band Oscillator Applications • • Superior performance in oscillator applications. Superior noise characteristics 2 : NF = 2.4 dB, |S21e| = 3.5 dB f = 2 GHz

Contextual Info: MT6L63FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L63FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. MT3S07T MT3S11T (MT3S07FS) (MT3S11FS) Maximum Ratings (Ta = 25°C)

Contextual Info: MT6L68FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L68FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. MT3S06T MT3S11T TESM(fSM) mold products (MT3S06FS)

Contextual Info: MT6L63FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L63FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. Q2 MT3S07T MT3S11T (MT3S07FS) (MT3S11FS) Rating Symbol

sec 2sc5088

Abstract: samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS
Contextual Info: 2007-9 PRODUCT GUIDE Radio-Frequency Semiconductors Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors, diodes and

MT4S300T

Abstract: TA4032FT MT3S111TU JAPANESE 2SC TRANSISTOR 2010 MT4S301T TA4029CTC TB7602CTC MT3S111P JAPANESE TRANSISTOR 2SC 2010 2sk3476
Contextual Info: 2011-1 PRODUCT GUIDE Radio-Frequency Semiconductors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Recommended Products by Application . 3 to 8 1.1 Cell Phones 1.2 TV Tuners 1.3 FRS/GMRS 1.4 Cordless Phones

Contextual Info: MT6L68FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L68FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. (MT3S06FS) (MT3S11FS) Rating Symbol Unit Q1 Q2 Collector-base voltage

MT3S11FS

Abstract: MT3S11T MT6L11FS
Contextual Info: MT6L11FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L11FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 1.0±0.05 0.7±0.05 Superior noise characteristics Superior performance in buffer and oscillator applications.

TOSHIBA RF Power Module S-AV24

Abstract: diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192
Contextual Info: 高周波用半導体デバイス ダイオード編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

3SK73

Abstract: S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112
Contextual Info: 高周波用半導体デバイス パワーデバイス編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

BB 505 Varicap Diode

Abstract: s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors TOSHIBA S-AV29H Zener c9v 3SK114
Contextual Info: Radio-Frequency Semiconductors Diodes Semiconductor Company The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent

FET K161

Abstract: S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR
Contextual Info: Radio-Frequency Semiconductors Transistors, FETs, Cell Packs Semiconductor Company The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or

FET K161

Abstract: Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 fet k241 k161 mosfet Transistor C2347 Transistor C1923
Contextual Info: 高周波用半導体デバイス トランジスタ・FET・セルパック編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

2sc5088 horizontal transistors

Abstract: S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 3SK121 fet 2SC2879 CB LINEAR CIRCUIT replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509
Contextual Info: High-Frequency Semiconductors Power Devices Semiconductor Company The information contained herein is subject to change without notice. 021023_D The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or