MT4C8512D18A Search Results

BCM 6302

Abstract: micron MT4C database for 4081 ic
Contextual Info: OBSOLETE MARCH 1995 D18A 512K X 8, 256K x 16 D R A M D IE I^IICRON 512Kx 8, 256Kx 16 DRAM DRAM DIE MT4C8512D18A and MT4C16257D18A G EN ERAL PHYSICAL SPECIFICATIONS • Wafer thickness =18.5 mils ±0.5 mils. • The backside wafer surface Is polished bare silicon.

Contextual Info: MICRON SEMICONDUCTOR INC b?E D • b 1 1 1 5 MT 000^7=57 711 ■ MRN OBSOLETE JUNE 94 D18A 512K X 8, 256K X 16 DRAM DIE M IC R O N B SEMiCONO'JCTOa INC. 512Kx8, 256Kx16 DRAM DRAM DIE MT4C8512D18A and MT4C16257D18A GENERAL PHYSICAL SPECIFICATIONS • • •