MT6L51 Search Results

2SC5256

Abstract: MT3S03AS MT3S03AT MT6L51AE
Contextual Info: MT6L51AE TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L51 AE V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Unit in mm TWO devices are built in to the super-thin and extreme super mini 6 pins package : ES6 in O o MOUNTED DEVICES

MT6L51AE

Abstract: 2SC5256 MT3S03AS MT3S03AT
Contextual Info: TO SH IBA MT6L51AE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L 51 AE Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Two devices are built in to the super-thin and extreme super mini 6 pins package : ES6 6ö in Oin ino 2V -O 11

Contextual Info: MT6L51AT TO SH IBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE M T 6 L 5 1 AT VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Unit in mm TWO devices are built in to the super-thin and ultra super mini 6 pins package : TU6 2.1 ± 0.1 MOUNTED DEVICES

2SC5256

Abstract: MT3S03AS MT3S03AT MT6L51AT
Contextual Info: TO SH IBA MT6L51AT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE M T 6 L 5 1 AT VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Unit in mm Two devices are built in to the super-thin and ultra super mini 6 pins package : TU6 2.1 ± 0.1 MOUNTED DEVICES

Contextual Info: TO SH IBA M T6L51AT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L51AT Unit in mm VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini 6 pins package : TU6 2.1 ± 0.1 MOUNTED DEVICES

Contextual Info: MT6L51AE TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L51 AE V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Unit in mm TWO devices are built in to the super-thin and extreme super mini 6 pins package : ES6 in O o MOUNTED DEVICES

2SC5256

Abstract: MT3S03AS MT3S03AT MT6L51AT
Contextual Info: MT6L51AT TO SHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE M T 6 L 5 1 AT VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Unit in mm TWO devices are built in to the super-thin and ultra super mini 6 pins package : TU6 2.1 ± 0.1 MOUNTED DEVICES

Contextual Info: MT6L51AE TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L51 AE Unit in mm VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and extreme super mini 6 pins package : ES6 in O o MOUNTED DEVICES

Contextual Info: MT6L51AE TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L51 AE Unit in mm VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and extreme super mini 6 pins package : ES6 in O o MOUNTED DEVICES

2SK3075 equivalent

Abstract: 10 ghz transistor 2SK3078 MT3S04T 2SC5066 MT6P03AE MT6P06E 3SK320 24lu1 transistor 2SC5066
Contextual Info: High-Frequency Devices for Mobile Communications PRODUCT GUIDE 800 MHz Band Analog and Digital Cellular High-Frequency Block Diagram Ant. RF Amp Mixer RX IF detection Prescaler VCO 1 900 MHz Buff Amp Buff Amp OSC (1) Tuning DUP Prescaler Buff Amp VCO (2) 100 MHz