MTP60N10E7L Search Results
MTP60N10E7L Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|---|
| MTP60N10E7L |
|
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate | Original | 219KB | 8 |
MTP60N10E7L Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: MOTOROLA Order this document by MTP60N10E7L/D SEMICONDUCTOR TECHNICAL DATA Advance Information MTP60N10E7L TMOS E-FET. High Energy Power FET N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 60 AMPERES 100 VOLTS RDS on = 0.022 W This advanced TMOS E–FET is designed to withstand high |
Original |
MTP60N10E7L/D MTP60N10E7L/D | |
ultra low idss
Abstract: pd 242 AN569 MTP60N10E7L transistor 600 volts.50 amperes
|
Original |
MTP60N10E7L/D MTP60N10E7L ultra low idss pd 242 AN569 MTP60N10E7L transistor 600 volts.50 amperes |