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    N0600N Search Results

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    N0600N Price and Stock

    Rochester Electronics LLC N0600N-S17-AY

    MOSFET N-CH 60V 30A TO220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey N0600N-S17-AY Tube 476
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    • 1000 $0.63
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    Renesas Electronics Corporation N0600N-S17-AY

    Trans MOSFET N-CH 60V 30A 3-Pin(3+Tab) TO-220 Isolated Tube
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical N0600N-S17-AY 22,000 495
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    • 1000 $0.7586
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    Rochester Electronics N0600N-S17-AY 22,000 1
    • 1 -
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    • 100 $0.6069
    • 1000 $0.5037
    • 10000 $0.4491
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    SMC Corporation of America NCA1B325-0300N+0600N-XC10

    CYLINDER, TIE ROD, NCA1 SERIES
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS NCA1B325-0300N+0600N-XC10 Bulk 5 Weeks 1
    • 1 $456.5
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    SMC Corporation of America NCDA1R150-0600N+0600N-XC10

    CYLINDER, TIE ROD, NCA1 SERIES
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    RS NCDA1R150-0600N+0600N-XC10 Bulk 5 Weeks 1
    • 1 $277.45
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    • 100 $277.45
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    SMC Corporation of America NCDA1L250-0200N+0600N-XC11

    CYLINDER, TIE ROD, NCA1 SERIES
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS NCDA1L250-0200N+0600N-XC11 Bulk 5 Weeks 1
    • 1 $360.45
    • 10 $360.45
    • 100 $360.45
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    Find more N0600N price and stock on Findchips.com

    N0600N Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF PDF Size Page count
    N0600N-S17-AY
    		Renesas Electronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 30A TO-220 Original PDF 8

    N0600N Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Preliminary Data Sheet N0600N R07DS0220EJ0100 Rev.1.00 Jan 25, 2011 MOS FIELD EFFECT TRANSISTOR Description The N0600N is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS on 1 = 25 m MAX. (VGS =10 V, ID = 15 A)


    Original     		N0600N R07DS0220EJ0100 N0600N N0600N-S17-AY 50p/tube O-220 PDF

    N0600N-S17

    Abstract: N0600N-S17-AY N0600N N0600
    Contextual Info: Preliminary Data Sheet N0600N R07DS0220EJ0100 Rev.1.00 Jan 25, 2011 MOS FIELD EFFECT TRANSISTOR Description The N0600N is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS on 1 = 25 mΩ MAX. (VGS =10 V, ID = 15 A)


    Original     		N0600N R07DS0220EJ0100 N0600N N0600N-S17-AY 50p/tube O-220 Voltage9044 N0600N-S17 N0600 PDF

    RJK03P7DPA

    Abstract: NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1
    Contextual Info: RENESAS Electronics New Product Highlight Highlight of Discrete Devices Renesas Electronics Corporation Analog & Power Devices Marketing & Production Planning Division July 2013 2012 Renesas Electronics Corporation. All rights reserved. 00000-A RENESAS Discrete Devices Position


    Original     		0000-A PAE-AA-12-0177-1 PAE-AA-12-0049-1 RJK03P7DPA NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1 PDF