1N5518
Abstract: 1N5519 1N5520 1N5521 1N5522 1N5523 1N5524 1N5546 0.4W zener diode
Contextual Info: JGD 1N5518 thru 1 N5546 0 . 4W LOW VOLTAGE AVALANCHE DIODES VOLTAGE RANGE 3.3 to 33 Volts DO-35 FEATURES * * * * Low zener noise specified Low zener impedance Low leakage current Hermetically sealed glass package MECHANICAL CHARACTERISTICS *^CASE: Hermetically sealed glass case. DO - 35.
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1N5518
1N5546
200CC/W
DO-35
1N5519
1N5520
1N5521
1N5522
1N5523
1N5524
1N5546
0.4W zener diode
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S3V 83
Abstract: S3V Diode TME 87 SN75460 DIODE S3V DIODE S3V 40 sn75462 T1IG SN55460 SN55461
Contextual Info: SERIES 55460/75460 DUAL PERIPHERAL DRIVERS INTERFACE CIRCUITS B U L L E T I N N O . D L -S 1 2 4 2 5 , D E C E M B E R 1 9 7 6 - R E V I S E D A U G U S T 1 9 7 7 PERIPHERAL DR IVER S FOR HIGH-VOLTAGE, HIGH-CURRENT D R IVER APPLICATIONS performance • Characterized for Use to 300 mA
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1976-REVISED
SN55460
SN55461
SN55462
SN55463
SN55464
SNS5460
SN75460,
2250t2
S3V 83
S3V Diode
TME 87
SN75460
DIODE S3V
DIODE S3V 40
sn75462
T1IG
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1N5523 DO7
Abstract: 1n5525
Contextual Info: 1N5518 thru Mierosemi Corp. N5546 $ The diode experts SANTA ANA, CA SCOTTSDALE, AZ For m ore in fo rm a tio n call: 6 02 941-6300 FEATURES LOW VOLTAGE AVALANCHE D IO D E S DO-7 • LOW ZENER NOISE SPECIFIED • LOW ZEN ERIM PED AN C E • LOW LEAKAGE CURRENT
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1N5518
1N5546
1N5518
N5546B
MIL-S-19500/437
375-inches
1N5546
1N5523 DO7
1n5525
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75327C
Abstract: SN7401 transistor bf 175 75S208 26S10M SN75129 SN75107 SN55109A
Contextual Info: m - The Line Driver and Line Receiver Data Book for Design Engineers 1977 T exas In s t r u m e n t s INCORPORATED LC C 4290 741 0 5 - 2 7 - E C P rin te d in U .S .A . IM PO R TA N T NOTICES Texas Instruments reserves the right to make changes at any time in
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CC-415.
S-104
75327C
SN7401
transistor bf 175
75S208
26S10M
SN75129
SN75107
SN55109A
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