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    onsemi NDB7051

    MOSFET N-CH 50V 70A D2PAK
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    DigiKey NDB7051 Reel 800
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    Rochester Electronics LLC NDB7051

    MOSFET N-CH 50V 70A D2PAK
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    DigiKey NDB7051 Bulk 174
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    Fairchild Semiconductor Corporation NDB7051

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    Bristol Electronics NDB7051 1,600 3
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    Quest Components NDB7051 1,280
    • 1 $3.3
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    Rochester Electronics NDB7051 2,394 1
    • 1 $1.66
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    • 100 $1.56
    • 1000 $1.41
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    NDB7051 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NDB7051 Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDB7051 National Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDB7051 National Semiconductor N-Channel Enhancement Mode Field Effect Transistor Scan PDF
    NDB7051L Fairchild Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF
    NDB7051L National Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF
    NDB7051L National Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Scan PDF
    NDB7051L National Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Scan PDF

    NDB7051 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CBVK741B019

    Abstract: EO70 F63TNR FDP7060 L86Z NDB7051 NDP4060L NDP7051 Polycarbonate
    Text: August 1996 NDP7051 / NDB7051 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original
    PDF NDP7051 NDB7051 CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB7051 NDP4060L Polycarbonate

    CBVK741B019

    Abstract: EO70 F63TNR FDP7060 NDB7051L NDP4060L NDP7051L DS1015
    Text: September 1996 NDP7051L / NDB7051L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features 67 A, 50 V. RDS ON = 0.0145 Ω @ VGS= 5 V RDS(ON) = 0.0115 Ω @ VGS= 10 V. These logic level N-Channel enhancement mode power field


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    PDF NDP7051L NDB7051L CBVK741B019 EO70 F63TNR FDP7060 NDB7051L NDP4060L DS1015

    NDB7051

    Abstract: NDP7051
    Text: N August 1996 NDP7051 / NDB7051 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored


    Original
    PDF NDP7051 NDB7051 NDB7051

    NDB7051L

    Abstract: NDP7051L
    Text: N September 1996 NDP7051L / NDB7051L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS


    Original
    PDF NDP7051L NDB7051L transients00 D/NDB7051L NDB7051L

    mosfet cross reference

    Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
    Text: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P


    Original
    PDF 2N7000 IRF7203 FDS9435A 2N7002 OT-23, IRF7204 NDS8434A BS170 mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original
    PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    12SnOFC

    Abstract: PMC-90 PMC-90 leadframe material 92.5Pb5Sn2.5Ag Tamac4 MKT-TO263A02 pmc90 PMC-90 to-263 RF1S640SM9A FDB2532
    Text: Date Created: 12/30/2003 Date Issued: 1/15/2004 PCN # 20040002 FORECAST CHANGE NOTIFICATION This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence. This is a preliminary notification. A final PCN will


    Original
    PDF fairchildF76143S3S HUF76145S3S HUF76419S3ST HUF76432S3S HUF76439S3S HUF76445S3ST HUF76639S3S HUF76645S3ST ISL9N303AS3 ISL9N306AS3ST 12SnOFC PMC-90 PMC-90 leadframe material 92.5Pb5Sn2.5Ag Tamac4 MKT-TO263A02 pmc90 PMC-90 to-263 RF1S640SM9A FDB2532

    NDB7051

    Abstract: No abstract text available
    Text: S e p te m b e r 1 9 9 6 N NDP7051 L / NDB7051L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features T hese lo g ic level N -C hannel e n h a n c e m e n t m o d e p o w e r fie ld effect tra n s is to rs are p ro d u c e d using


    OCR Scan
    PDF NDP7051 NDB7051L NDP7051L D/NDB7051 NDB7051

    NDB-Series

    Abstract: NDB7051L NDP7051L
    Text: N a ti on a l Semiconductor May 1996 " ADVANCE INFORMATION NDP7051L / NDB7051L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancem ent m ode pow er fie ld effect tran sisto rs are produced using


    OCR Scan
    PDF NDP7051L NDB7051L b-501130 NDB-Series NDB7051L

    Untitled

    Abstract: No abstract text available
    Text: Septem ber 1996 N NDP7051 L / NDB7051L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancem ent m ode pow er field effect transistors are produced using National's proprietary, high cell density, DMOS


    OCR Scan
    PDF NDP7051 NDB7051L

    Untitled

    Abstract: No abstract text available
    Text: August 1 99 6 N NDP7051 / NDB7051 N-Channel Enhancement M ode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan
    PDF NDP7051 NDB7051

    NDB7051

    Abstract: NDP7051
    Text: M ay 1996 National Semiconductor " NDP7051 / NDB7051 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan
    PDF NDP7051 NDB7051 bSQ113Ã NDB7051

    20301-D

    Abstract: NDB7051 NDP7051 ACAA TRANSISTOR
    Text: August 1996 N NDP7051 / NDB7051 N-Channel Enhancement M ode Field Effect Transistor General Description Features T hese N -C hannel e n h a n c e m e n t m o d e po w er field effect transistors are p roduced using N ational's proprietary, high cell density, DMOS technology.


    OCR Scan
    PDF NDP7051 NDB7051 20301-D NDB7051 ACAA TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: August 1996 N NDP7051 / NDB7051 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancem ent m ode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan
    PDF NDP7051 NDB7051