NE218 Search Results

NE218 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
NE21800		NEC	60 GHz, low noise X-band GaAs MESFET	Scan	PDF	189.16KB	5
NE21889		NEC	60 GHz, low noise X-band GaAs MESFET	Scan	PDF	189.16KB	5

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Laird, A DuPont Business


Laird, A DuPont Business 8864-LT20NE2189 EMI Gaskets, Sheets, Absorbers & Shielding QTY 1 = 1 FOOT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	8864-LT20NE2189		316			1 $23.69 10 $21.85 100 $18.67 1000 $16.62 10000 $16.62	Buy Now
Laird, A DuPont Business 8863-LT20NE2183 EMI Gaskets, Sheets, Absorbers & Shielding QTY 1 = 1 FOOT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	8863-LT20NE2183					1 $179.15 10 $171.60 100 $171.60 1000 $171.60 10000 $171.60	Get Quote
Laird, A DuPont Business 8866-LT20NE2187 EMI Gaskets, Sheets, Absorbers & Shielding QTY 1 = 1 FOOT
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Mouser Electronics	8866-LT20NE2187					1 $51.31 10 $39.49 100 $35.79 1000 $30.81 10000 $30.81	Get Quote
Laird, A DuPont Business 8863-LT20NE2185 EMI Gaskets, Sheets, Absorbers & Shielding QTY 1 = 1 FOOT
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Mouser Electronics	8863-LT20NE2185					1 $10.20 10 $6.88 100 $5.69 1000 $4.95 10000 $4.31	Get Quote
Laird, A DuPont Business 8863-LT20NE2181 EMI Gaskets, Sheets, Absorbers & Shielding QTY 1 = 1 FOOT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	8863-LT20NE2181					1 $40.77 10 $40.77 100 $28.89 1000 $24.65 10000 $24.65	Get Quote

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NE218 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: NE21889 Transistors N-Channel UHF/Microwave MESFET V BR DSS (V)5.0 V(BR)GSS (V) I(D) Max. (A)120m P(D) Max. (W)300m Maximum Operating Temp (øC)175õ I(DSS) Min. (A) I(DSS) Max. (A) @V(DS) (V) (Test Condition) @Temp (øC) (Test Condition) g(fs) Min. (S) Trans. conduct.	Original	NE21889	PDF
2SK281 Abstract: 203l2 NE218 NE21889 NE21800 Contextual Info: NEC/ L427414 OOOlblH Q 1SE D CALIFORNIA NEC T - 3 ,h lS LOW NOISE X-BAND G aAs MESFET NE21800 NE21889 FEATURES DESCRIPTION AND APPLICATIONS • V E R Y H IG H fmax: 60 G H z The NE218 is a 1 pm recessed gate gallium arsenide GaAs n-channel field effect transistor (FET). Offering low noise figure	OCR Scan	Lj457414 NE21800 NE21889 NE218 NE21800) 2SK281 203l2 NE21889	PDF
Contextual Info: Preset counters electronic 2 presets, totalizer and batch counter Large 14 mm display LED, 6-digits, programmable NE218 Features – Preset counter with two presets – Display 6-digits – Totalizer, hour counter – Operating mode, start count, scaling factor	Original	NE218 RS422/RS485 NE218 RS485 RS422	PDF
2SK281 Abstract: sl2109 Contextual Info: N E C / 15E D CALIFORNIA SEC • b427414 QOOlblS 0 T - 3 t- 2 C LOW NOISE X-BAND GaAs MESFET NE21800 NE21889 FEATURES DESCRIPTION AND APPLICATIONS • V ER Y H IG H fmax: 60 GHz The NE218 is a 1 pm recessed gate gallium arsenide GaAs n-channel field effect transistor (FET). Offering low noise figure	OCR Scan	b427414 NE21800 NE21889 NE218 NE21800) NE21889) 2SK281 sl2109	PDF
3 x 4 keypad to 7 segment Abstract: preset counting meter diagram Two Digit counter diagram makrolon baumer COUNTER LED led 7-segment NE218 digital temperature sensor with 7 segment display Contextual Info: Preset counters electronic 2 presets, totalizer and batch counter Large 14 mm display LED, 6-digits, programmable NE218 Features –– Preset counter with two presets –– Display 6-digits –– Totalizer, hour counter –– Operating mode, start count, scaling factor	Original	NE218 RS422/RS485 NE218 RS485 RS422 3 x 4 keypad to 7 segment preset counting meter diagram Two Digit counter diagram makrolon baumer COUNTER LED led 7-segment digital temperature sensor with 7 segment display	PDF
Contextual Info: NE21800 Transistors N-Channel UHF/Microwave MESFET V BR DSS (V)5.0 V(BR)GSS (V) I(D) Max. (A)120m P(D) Max. (W)500m Maximum Operating Temp (øC)175õ I(DSS) Min. (A) I(DSS) Max. (A) @V(DS) (V) (Test Condition) @Temp (øC) (Test Condition) g(fs) Min. (S) Trans. conduct.	Original	NE21800	PDF
NE24483 Abstract: AF367 NE38883 BFT93R NE13783, ATF-10135 BFT92R BF936 CFX21 to119 Contextual Info: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Po Manufacturer Max W V(BR)CBO (V) fose Max (Hz) Gp Po N.F. (dB) (W) (dB) at fTeat (Hz) Ie Max (A) TOpe, Mati. Max (OC) Package Style UHF/Microwav Transistors, Bipolar NPN (Co nt' d) S01543 ThmsnCSFEFC	Original	S01543 AF367 AF280S 2N2999 2N2415 2N2416 2SA1245 BFQ24 NE59333 BFQ52 NE24483 NE38883 BFT93R NE13783, ATF-10135 BFT92R BF936 CFX21 to119	PDF
NE800296 Abstract: diode deg avalanche zo 150 63 NE72089 ne8002 SK3448 universal jfet biasing curve graph gunn diode ghz s-parameter NE800196 impatt diode NE800495-4 Contextual Info: California Eastern Laboratories AN82901-1 APPLICATION NOTE Application of Microwave GaAs FETs INTRODUCTION The history of converting microwave communications, as well as other communications technologies, to solid state electronics is a long one. Early advances were first made in	Original	AN82901-1 24-Hour NE800296 diode deg avalanche zo 150 63 NE72089 ne8002 SK3448 universal jfet biasing curve graph gunn diode ghz s-parameter NE800196 impatt diode NE800495-4	PDF
NE800296 Abstract: NE800196 NE24406 diode deg avalanche zo 150 63 SK3448 ne8002 NE868199 shockley diode NE800495-4 shockley diode application Contextual Info: California Eastern Laboratories AN82901-1 APPLICATION NOTE Application of Microwave GaAs FETs 9/82 INTRODUCTION The history of converting microwave communications, as well as other communications technologies, to solid state electronics is a long one. Early advances were first made in	Original	AN82901-1 NE800296 NE800196 NE24406 diode deg avalanche zo 150 63 SK3448 ne8002 NE868199 shockley diode NE800495-4 shockley diode application	PDF