NE23300 Search Results

LORB

Abstract: NE2720 NE334S01
Contextual Info: Small Signal GaAs FETs Selection Guide. 1-2 Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs Typical S pecificatio ns @ Ta = 25°C PM Number Sat« Gate Length W idth Mm ftim ) •i.t RecomrnaruM Frequency Rang* . pVMW ' gB S " NE23300 0.3 280 0.1 to 18

NE23300

Contextual Info: SUPER LOW NOISE HJ FET SPACE QUALIFIED FEATURES NE23300 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA • GATE LENGTH: 0.3 µm • GATE WIDTH: 280 µm DESCRIPTION The NE23300 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to

Contextual Info: SUPER LOW NOISE HJ FET SPACE QUALIFIED FEATURES NE23300 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY • VERY LOW NOISE FIGURE: 0.75 dB typical at 12 GHz V ds = 2 V, I ds = 10 mA • HIGH ASSOCIATED GAIN: 10.5 dB Typical at 12 GHz cû • GATE LENGTH: 0 3 \im

Contextual Info: SUPER LOW NOISE HJ FET SPACE QUALIFIED FEATURES NE23300 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY • VERY LOW NOISE FIGURE: V ds = 2 V, Ids = 10 mA 0.75 dB typical at 12 GHz • HIGH ASSOCIATED GAIN: CO 10.5 dB Typical at 12 GHz •o • GATE LENGTH: 0.3 urn

NEC Ga FET marking L

Abstract: tamagawa gaas fet marking B mmic amplifier marking code N5 NE272 FET marking code .N5 ne29200 NE23383B NE292 gaas fet marking a
Contextual Info: GET-30749, Revision C NEC NEC Corporation Tamagawa Plant 1753,Shimonumabe, Nakahara-lcu, Kawasaki, Kanagawa, 211-8666 Specification Control Drawing o f Grade L GaAs Devices fo r Satellite Applications Prepared on: September 28,2000 Prepared by: Masahito Kushima