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    NE651R479A Price and Stock

    California Eastern Laboratories (CEL) NE651R479A-A

    RF MOSFET GAAS HJ-FET 3.5V 79A
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    Rochester Electronics LLC NE651R479A-T1-A

    RF MOSFET HFET 3.5V 79A
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    DigiKey NE651R479A-T1-A Bulk 38
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    California Eastern Laboratories (CEL) NE651R479A-T1-A

    RF MOSFET GAAS HJ-FET 3.5V 79A
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    DigiKey NE651R479A-T1-A Reel
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    California Eastern Laboratories (CEL) NE651R479A-EVPW19

    EVAL BOARD NE651R479A 1.9GHZ
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    Renesas Electronics Corporation NE651R479A-T1-A

    Trans FET N-CH 8V 1A 4-Pin Case 79A T/R
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    Verical NE651R479A-T1-A 4,840 41
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    Rochester Electronics NE651R479A-T1-A 4,840 1
    • 1 $7.64
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    • 100 $7.18
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    NE651R479A Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NE651R479A NEC 1 W, L&S-BAND MEDIUM POWER GaAs HJ-FET Original PDF
    NE651R479A NEC Semiconductor Selection Guide Original PDF
    NE651R479A NEC 0.4 W L-BAND POWER GaAs HJ-FET Original PDF
    NE651R479A-A California Eastern Laboratories MEDIUM POWER GaAs HJ-FET Original PDF
    NE651R479A-EVPW19 California Eastern Laboratories RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL BOARD NE651R479A 1.9GHZ Original PDF
    NE651R479A-EVPW24 California Eastern Laboratories RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL BOARD NE651R479A 2.4GHZ Original PDF
    NE651R479A-EVPW35 California Eastern Laboratories RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL BOARD NE651R479A 3.5GHZ Original PDF
    NE651R479A-T1 NEC 0.4 W L-Band Power GaAs HJ-FET Original PDF
    NE651R479A-T1 NEC 0.4 W L-BAND POWER GaAs HJ-FET Original PDF
    NE651R479A-T1-A California Eastern Laboratories RF FETs, Discrete Semiconductor Products, HJ-FET GAAS 1.9GHZ 1W 79A Original PDF
    NE651R479A-T1-A NEC TRANS JFET N-CH 8V 350MA REEL Original PDF
    NE651R479A-T1-AZ NEC FET Transistor: 0.4W L-BAND POWER GaAs HJ-FET: Tape And Reel Original PDF

    NE651R479A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    max 16801 pspice

    Abstract: 40J100
    Text: 0.4 W, L&S-BAND MEDIUM POWER GaAs HJ-FET NE651R479A FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,


    Original     		PDF NE651R479A IMT-2000, NE6501R479A IR35-00-2 24-Hour max 16801 pspice 40J100

    6822 FET

    Abstract: No abstract text available
    Text: 0.4 W, L&S-BAND MEDIUM POWER GaAs HJ-FET NE651R479A FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,


    Original     		PDF NE651R479A IMT-2000, NE6501R479A IR35-00-2 24-Hour 6822 FET

    nec k 4145

    Abstract: NE6510179A NE6510379A NE651R479A NE651R479A-T1
    Text: DATA SHEET N-CHANNEL GaAs HJ-FET NE651R479A 0.4 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE651R479A is a 0.4 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication and wireless PC LAN systems. It is capable of delivering 0.4 W of output power CW with high linear


    Original     		PDF NE651R479A NE651R479A NE6510179A NE6510379A. nec k 4145 NE6510379A NE651R479A-T1

    100A5R1CP150X

    Abstract: IMT-2000 NE651R479A NE651R479A-A NE651R479A-T1-A ATC 1084
    Text: NEC's 1 W, L&S-BAND MEDIUM POWER GaAs HJ-FET NE651R479A FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,


    Original     		PDF NE651R479A IMT-2000, NE651R479A 100A5R1CP150X IMT-2000 NE651R479A-A NE651R479A-T1-A ATC 1084

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET N-CHANNEL GaAs HJ-FET NE651R479A 0.4 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE651R479A is a 0.4 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication and wireless PC LAN systems. It is capable of delivering 0.4 W of output power CW with high linear


    Original     		PDF NE651R479A NE651R479A NE6510179A NE6510379A.

    NE6510179A

    Abstract: NE6510379A NE651R479A NE651R479A-T1
    Text: PRELIMINARY DATA SHEET N-CHANNEL GaAs HJ-FET NE651R479A 0.4 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE651R479A is a 0.4 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication systems. It is capable of delivering 0.4 watt of output power CW with high linear gain, high


    Original     		PDF NE651R479A NE651R479A NE6510179A NE6510379A. NE6510379A NE651R479A-T1

    NE6510179A

    Abstract: NE650103M NE651R479A
    Text: NEC Discrete Power Devices www.cel.com GaAs Driver Devices Typical Specifications @ TC = 25°C Power & Gain Frequency Linear Range P1dB POUT PIN Gain GHz (dBm) (dBm) (dBm) (dB) Part Number NE651R479A 0.8 to 3.7 — NE6510179A 0.8 to 3.7 — NE650103M 0.8 to 2.7


    Original     		PDF NE651R479A NE6510179A NE650103M NE6510179A NE650103M NE651R479A

    Untitled

    Abstract: No abstract text available
    Text: 0.4 W L & S-BAND POWER GaAs HJ-FET NE651R479A FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: POUT = +27 dBm TYP @ VDS = 3.5 V, IDset = 50 mA, f = 900 MHz, PIN = +13 dBm POUT = +27 dBm TYP @ VDS = 3.5 V, IDset = 50 mA, f = 1.9 GHz, PIN = +15 dBm


    Original     		PDF NE651R479A IR35-00-2 24-Hour

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet 0.4 W L & S-BAND POWER GaAs HJ-FET NE651R479A FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: POUT = +27 dBm TYP. @ VDS = 3.5 V, IDset = 50 mA, f = 900 MHz, PIN = +13 dBm POUT = +27 dBm TYP. @ VDS = 3.5 V, IDset = 50 mA,


    Original     		PDF NE651R479A NE651R479A 24-Hour

    k 2134 nec

    Abstract: NEC k 2134
    Text: 0.4 W L & S-BAND POWER GaAs HJ-FET NE651R479A FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: POUT = +27 dBm TYP @ VDS = 3.5 V, IDset = 50 mA, f = 900 MHz, PIN = +13 dBm POUT = +27 dBm TYP @ VDS = 3.5 V, IDset = 50 mA, f = 1.9 GHz, PIN = +15 dBm


    Original     		PDF NE651R479A IR35-00-2 24-Hour k 2134 nec NEC k 2134

    NEC k 2134

    Abstract: No abstract text available
    Text: 0.4 W L & S-BAND POWER GaAs HJ-FET NE651R479A FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: POUT = +27 dBm TYP. @ VDS = 3.5 V, IDset = 50 mA, f = 900 MHz, PIN = +13 dBm POUT = +27 dBm TYP. @ VDS = 3.5 V, IDset = 50 mA, f = 1.9 GHz, PIN = +15 dBm


    Original     		PDF NE651R479A IR35-00-2 24-Hour NEC k 2134

    ATC 1084

    Abstract: GRM40C0G 100A5R1CP150X IMT-2000 NE651R479A NE651R479A-A NE651R479A-T1-A
    Text: NEC's 1 W, L&S-BAND MEDIUM POWER GaAs HJ-FET NE651R479A FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,


    Original     		PDF NE651R479A IMT-2000, NE651R479A ATC 1084 GRM40C0G 100A5R1CP150X IMT-2000 NE651R479A-A NE651R479A-T1-A

    Untitled

    Abstract: No abstract text available
    Text: 1 W, L&S-BAND MEDIUM POWER GaAs HJ-FET NE651R479A FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000, PCS


    Original     		PDF NE651R479A IMT-2000, NE651R479A IR35-00-2 24-Hour

    IC 3140

    Abstract: transistor NEC D 882 p ATC 1084 nec d 882 p 901 704 16 08 55 nec d 882 p datasheet 100A5R1CP150X IMT-2000 NE651R479A NE651R479A-T1
    Text: 1 W, L&S-BAND MEDIUM POWER GaAs HJ-FET NE651R479A FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000, PCS


    Original     		PDF NE651R479A IMT-2000, NE651R479A IR35-00-2 24-Hour IC 3140 transistor NEC D 882 p ATC 1084 nec d 882 p 901 704 16 08 55 nec d 882 p datasheet 100A5R1CP150X IMT-2000 NE651R479A-T1

    NE6510179A

    Abstract: NE6510379A NE651R479A NE651R479A-T1
    Text: DATA SHEET N-CHANNEL GaAs HJ-FET NE651R479A 0.4 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE651R479A is a 0.4 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication and wireless PC LAN systems. It is capable of delivering 0.4 W of output power CW with high linear


    Original     		PDF NE651R479A NE651R479A NE6510179A NE6510379A. NE6510379A NE651R479A-T1

    Untitled

    Abstract: No abstract text available
    Text: NONLINEAR MODEL NE651R479A DRAIN SCHEMATIC Ldpkg L=0.001 nH Ld L=0.55 nH GATE Lspkg L=0.001 nH Q1 Cdspkg C=0.1 pF Lg L=1.45 nH Cdspkg C=0.1 pF Lspkg L=0.001 nH SOURCE FET NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters Q1 1.0 VTO 0.9255 RG VTOSC RD 0.2


    Original     		PDF NE651R479A 1e-16 30e-12 2e-12 100e-12 14e-12 1e-12

    IC 3140

    Abstract: 6822 FET NEC k 2134 ic atc 1084
    Text: NEC's 1 W, L&S-BAND MEDIUM POWER GaAs HJ-FET NE651R479A FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,


    Original     		PDF NE651R479A IMT-2000, NE651R479A IMT-20equency: IC 3140 6822 FET NEC k 2134 ic atc 1084

    FET marking code g5d

    Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
    Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		PDF R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic

    nec mosfet marked v75

    Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77

    2SK2396

    Abstract: PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711
    Text: CD-ROM版RF & マイクロ波デバイス CD-ROM X13769XJ2V0CD00 11−1 RF & マイクロ波デバイス IC • 可変利得増幅器（µ PCx×××，µPG××××） 品 名 µPC8119T アプリケーション 移動通信 電源電圧 電流 周波数


    Original     		PDF X13769XJ2V0CD00 PC8119T PC8120T PC8130TA PC8131TA PG175TA PC2723T PC3206GR PC2748 PC2745 2SK2396 PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711

    uPD16305

    Abstract: uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943
    Text: Search by Product Name Find tool 1. Click the icon on the tool bar. 2. The find dialog box will be displayed. 3. Input the full product name or part of the product name to Find be located and click . 4. A characteristic table will be displayed if the retrieved product name is clicked.


    Original     		PDF PD43256A> PD43256A X13769XJ2V0CD00 PD750004 PD750006 PD750008 PD75P0016 PD750104 PD750106 PD750108 uPD16305 uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943

    nf025

    Abstract: NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408
    Text: CD-ROM RF and Microwave Devices CD-ROM X13769XJ2V0CD00 11-1 RF and Microwave Devices IC • AGC AMP. µ PCx×××, µPG×××× Part Number Applications Supply Voltage (V) Supply Current (mA) Operating Frequency (MHz) µPC8119T Mobile Comm. 3 11 100–1920


    Original     		PDF X13769XJ2V0CD00 950MHz 500MHz PC2794 PC1687 PC2744 PC2775/µ nf025 NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408

    x 1535 ce

    Abstract: 0537
    Text: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs HJ-FET NE651R479A 0.4 W L-BAND POWER GaAs HJ-FET DESCRIPTION The N E 651R 479A .is a 0.4 W G a A s HJ-FET designed for middle power transmitter applications for mobile communication systems. It is capable of delivering 0.4 watt of output power CW with high linear gain, high


    OCR Scan     		PDF NE651R479A NE6510179A NE6510379A. x 1535 ce 0537

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs HJ-FET NE651R479A 0.4 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE651R479A is a 0.4 W GaAs HJ-FET designed for middle power transm itter applications for mobile communication systems. It is capable of delivering 0.4 watt of output power CW with high linear gain, high


    OCR Scan     		PDF NE651R479A NE651R479A NE6510179A NE6510379A. R479A