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Panduit Corp DNE6812B ENCLOSURE ACCESSORY NET VERSE
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California Eastern Laboratories (CEL) NE68118-A RF TRANS NPN 10V 9GHZ SOT343
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California Eastern Laboratories (CEL) NE68133-A RF TRANS NPN 10V 9GHZ SOT23
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DigiKey	NE68133-A					1 - 10 - 100 - 1000 - 10000 -	Buy Now
California Eastern Laboratories (CEL) NE68139-T1 RF TRANS NPN 10V 9GHZ SOT143R
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California Eastern Laboratories (CEL) NE681M03-A RF TRANS NPN 10V 7GHZ M03
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NE681 Datasheets (66)

Part	Manufacturer	Description	Datasheet Type	PDF
NE681	NEC	NECs NPN SILICON HIGH FREQUENCY TRANSISTOR	Original	PDF
NE68100	NEC	NPN SILICON HIGH FREQUENCY TRANSISTOR	Original	PDF
NE68100	NEC	NPN silicon high frequency transistor.	Original	PDF
NE68100	NEC	9 GHz, NPN silicon high frequency transistor	Scan	PDF
NE68118	NEC	NPN silicon high frequency transistor.	Original	PDF
NE68118	NEC	Semiconductor Selection Guide	Original	PDF
NE68118-A	California Eastern Laboratories	RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 1GHZ SOT-343	Original	PDF
NE68118-T1	NEC	NPN SILICON HIGH FREQUENCY TRANSISTOR	Original	PDF
NE68118-T1	NEC	NECs NPN SILICON HIGH FREQUENCY TRANSISTOR	Original	PDF
NE68118-T1-A	California Eastern Laboratories	RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 1GHZ SOT343	Original	PDF
NE68119	NEC	Semiconductor Selection Guide	Original	PDF
NE68119	NEC	NPN silicon high frequency transistor.	Original	PDF
NE68119-A	California Eastern Laboratories	RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 1GHZ SMD	Original	PDF
NE68119-T1	NEC	NPN SILICON HIGH FREQUENCY TRANSISTOR	Original	PDF

NE68119-T1	NEC	NECs NPN SILICON HIGH FREQUENCY TRANSISTOR	Original	PDF
NE68119-T1-A	California Eastern Laboratories	RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 1GHZ SMD	Original	PDF
NE68130	NEC	Semiconductor Selection Guide	Original	PDF
NE68130	NEC	NPN silicon high frequency transistor.	Original	PDF
NE68130	NEC	Super Minihold Transistors	Scan	PDF
NE68130-A	California Eastern Laboratories	RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 1GHZ SOT-323	Original	PDF

NE681 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
NE68135 Abstract: No abstract text available Text: NONLINEAR MODEL SCHEMATIC NE68135 Q1 CCB_PKG 0.11pF 0.07pF LC 0.96 nH CCB RB_PKG LB_PKG LB 0.15nH 0.45nH RC_PKG COLLECTOR 0.1 ohms CCE 0.01pF BASE 0.1 ohms LC_PKG 0.15nH CCE_PKG 0.2pF LE_PKG 0.38nH CBE_PKG 0.05pF RE_PKG 0.1 ohms CBEX_PKG CCEX_PKG 0.2pF 0.1pF	Original	PDF	NE68135 7e-16 77e-11 2e-12 8e-12 14e-12 24-Hour NE68135
NE68118 Abstract: No abstract text available Text: NONLINEAR MODEL SCHEMATIC NE68118 Q1 CCBPKG CCB LC LBX LCX Collector LB Base CCE LC LE CBEPKG CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 IS 2.7e-16 MJC 0.56 BF 185 XCJC NF 1.02 CJS VAF 15 VJS 0.75 IKF 0.055 MJS ISE 1.77e-11	Original	PDF	NE68118 7e-16 77e-11 2e-12 8e-12 14e-12 07e-12 01e-12 16NAL NE68118
kf 203 transistor Abstract: 08E-12 IC 2030 PIN CONNECTIONS bjt 522 DATASHEET OF BJT 547 NE AND micro-X 2SC4227 2SC5007 BF 194 npn transistor NE681 Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz E • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz B • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 35 MICRO-X 00 (CHIP) DESCRIPTION	Original	PDF	NE681 NE681 NE68100 NE68118-T1 NE68119-T1 NE68130-T1 NE68133-T1B NE68135 kf 203 transistor 08E-12 IC 2030 PIN CONNECTIONS bjt 522 DATASHEET OF BJT 547 NE AND micro-X 2SC4227 2SC5007 BF 194 npn transistor
ic 741 free Abstract: 2SA1977 NE68133 NE97733 NE97733-T1 S21E iC 828 Transistor Text: PNP SILICON HIGH FREQUENCY TRANSISTOR NE97733 FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8.5 GHz TYP • HIGH SPEED SWITCHING CHARACTERISTICS • NPN COMPLIMENT AVAILABLE: NE68133 • HIGH INSERTION POWER GAIN: \|S21E\|2 = 12 dB at 1 GHz 33 SOT 23 STYLE	Original	PDF	NE97733 NE68133 NE97733 2SA1977 NE97733-T1 24-Hour ic 741 free 2SA1977 NE68133 NE97733-T1 S21E iC 828 Transistor
Untitled Abstract: No abstract text available Text: NE68130 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)10 V(BR)CBO (V)20 I(C) Max. (A)65m Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC) Maximum Operating Temp (øC)150 I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition)10	Original	PDF	NE68130
Untitled Abstract: No abstract text available Text: SILICON TRANSISTOR UPA812T NPN SILICON HIGH FREQUENCY TRANSISTOR OUTLINE DIMENSIONS Units in mm FEATURES • • • • • SMALL PACKAGE STYLE: 2 NE681 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 (Top View) LOW NOISE FIGURE: NF = 1.4 dB TYP at 1 GHz	Original	PDF	UPA812T NE681 UPA812T UPA812T-T1-A 24-Hour
ic 741 free Abstract: T92 marking 2SA1977 NE68133 NE97733 S21E 682 MARKING SOT-23 sot-23 24 Text: PNP SILICON HIGH FREQUENCY TRANSISTOR NE97733 FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8.5 GHz TYP • HIGH SPEED SWITCHING CHARACTERISTICS • NPN COMPLIMENT AVAILABLE: NE68133 • HIGH INSERTION POWER GAIN: \|S21E\|2 = 12 dB at 1 GHz 33 SOT 23 STYLE	Original	PDF	NE97733 NE68133 NE97733 2SA1977 24-Hour ic 741 free T92 marking 2SA1977 NE68133 S21E 682 MARKING SOT-23 sot-23 24
Untitled Abstract: No abstract text available Text: NE68137 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)10 V(BR)CBO (V)20 I(C) Max. (A)65m Absolute Max. Power Diss. (W)250m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition)10	Original	PDF	NE68137
Untitled Abstract: No abstract text available Text: NE68133 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)10 V(BR)CBO (V)20 I(C) Max. (A)65m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition)10	Original	PDF	NE68133
Untitled Abstract: No abstract text available Text: NE68100 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)10 V(BR)CBO (V)20 I(C) Max. (A)65m Absolute Max. Power Diss. (W)600m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition)10	Original	PDF	NE68100
2SA1977 Abstract: NE68133 NE97733 S21E Text: PNP SILICON HIGH FREQUENCY TRANSISTOR NE97733 FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8.5 GHz TYP • HIGH SPEED SWITCHING CHARACTERISTICS • NPN COMPLIMENT AVAILABLE: NE68133 • HIGH INSERTION POWER GAIN: \|S21E\|2 = 12 dB at 1 GHz 33 SOT 23 STYLE	Original	PDF	NE97733 NE68133 NE97733 2SA1977 2SA1977 NE68133 S21E
2SC3583 Abstract: kf 203 transistor BJT BF 167 marking 855 sot 353 2SC4227 2SC5007 2SC5012 NE681 NE68139 NE68118 Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 35 MICRO-X 00 (CHIP) DESCRIPTION	Original	PDF	NE681 NE681 24-Hour 2SC3583 kf 203 transistor BJT BF 167 marking 855 sot 353 2SC4227 2SC5007 2SC5012 NE68139 NE68118
NE681M03 Abstract: m03 transistor BJT IC Vce af1rc bf 239 NE AND micro-X 2SC5433 NE681 S21E 2SC543 Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE681M03 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M03 NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance	Original	PDF	NE681M03 NE681M03 NE681 m03 transistor BJT IC Vce af1rc bf 239 NE AND micro-X 2SC5433 S21E 2SC543
c 5929 transistor Abstract: transistor k 2541 Transistor C 4927 741 LEM UPA802T 2955 transistor lem 723 733 transistor c 5299 Text: SILICON TRANSISTOR UPA802T NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • • SMALL PACKAGE STYLE: 2 NE681 Die in a 2 mm x 1.25 mm package LOW NOISE FIGURE: NF = 1.4 dB TYP at 1 GHz HIGH GAIN: \|S21E\|2 = 12 dB TYP at 1 GHz HIGH GAIN BANDWIDTH: fT = 7 GHz	Original	PDF	UPA802T NE681 UPA802T UPA802T-T1-A 24-Hour c 5929 transistor transistor k 2541 Transistor C 4927 741 LEM 2955 transistor lem 723 733 transistor c 5299

UPA802T Abstract: 10 ghz transistor npn dual emitter RF Transistor NE681 S21E UPA802T-T1 2 ghz transistor Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • • UPA802T OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE681 Die in a 2 mm x 1.25 mm package LOW NOISE FIGURE: NF = 1.4 dB TYP at 1 GHz HIGH GAIN: \|S21E\|2 = 12 dB TYP at 1 GHz	Original	PDF	UPA802T NE681 UPA802T UPA802T-T1, 24-Hour 10 ghz transistor npn dual emitter RF Transistor S21E UPA802T-T1 2 ghz transistor
2SC5650 Abstract: NE681 NE681M23 S21E Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE681M23 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M23 NEW MINIATURE M23 PACKAGE: – World's smallest transistor package footprint — leads are completely underneath package body – Low profile/0.55 mm package height	Original	PDF	NE681M23 NE681M23 24-Hour 2SC5650 NE681 S21E
2SC5615 Abstract: NE681 NE681M13 S21E Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE681M13 OUTLINE DIMENSIONS Units in mm FEATURES • • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz +0.1 0.5 –0.05 +0.1 0.15 –0.05 0.3 1 2 0.35 XX • PACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE: – Small transistor outline –	Original	PDF	NE681M13 NE681M13 24-Hour 2SC5615 NE681 S21E
Untitled Abstract: No abstract text available Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE681 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 (Top View) LOW NOISE FIGURE: NF = 1.4 dB TYP at 1 GHz 2.1 HIGH GAIN: IS21 EI2 = 12 dB TYP at 1 GHz	OCR Scan	PDF	NE681 UPA812T UPA812T-T1
Transistors BF 494 Abstract: Transistor BJT 547 b transistor kf 469 Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fr = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 00 CHIP 35 (MICRO-X) 18 (SOT 343 STYLE)	OCR Scan	PDF	NE681 NE68100 NE68118-T1 NE68119-T1 NE68130-T1 NE68133-T1B NE68135 Transistors BF 494 Transistor BJT 547 b transistor kf 469
NE66100 Abstract: transistor c 6073 Transistor C 1279 h16101 NE68139 ic 17806 Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: fr - 8 GHz • LOW NOISE FIGURE: 1.2dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15dB at 1 GHz 12 dB AT 2 GHz • LOW COST 00 CHIP	OCR Scan	PDF	NE681 NE66100 transistor c 6073 Transistor C 1279 h16101 NE68139 ic 17806
transistor npn c 6073 Abstract: 433 SOT-23 transistor npn d 2078 944 1L2 NE68139 Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fx= 8 GHz • LOW NOISE FIGURE: 1,2dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB AT 2 GHz 00 CHIP 35 (MICRO-X) 33 (SOT 23 STYLE) 39 (SOT 143 STYLE)	OCR Scan	PDF	NE681 OT-23) transistor npn c 6073 433 SOT-23 transistor npn d 2078 944 1L2 NE68139
NE68019 Abstract: NE68839 NE68018 NE68719 Text: Surface Mount Bipolar Transistors for Low Current, Low Voltage Applications - ” „ ft. -.H r* VCE lc TYP V (m A) (dB) •Wf, ,-fc « &€ MAX SOT-343 STYLE 4 PIN SUPER MINI MOLD NE68018 1.0 1 1 1.5 12.0 1.0 1 12.5 10.0 100 35 320 NE68118 1.0 2.5 3	OCR Scan	PDF	NE68018 NE68118 NE68518 NE68618 NE68718 NE68818 NE85618 OT-343 NE68019 NE68119 NE68839 NE68719
Untitled Abstract: No abstract text available Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR UPA812T OUTLINE DIMENSIONS Units in mm FEATURES SMALL PACKAGE STYLE: 2 NE681 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 (Top View) LOW NOISE FIGURE: NF = 1.4 dB TYP at 1 GHz HIGH GAIN:	OCR Scan	PDF	NE681 UPA812T UPA812T UPA812T-T1, 24-Hour
bjt npn m03 Abstract: No abstract text available Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE681M03 OUTLINE DIMENSIONS um ts in mm FEATURES • PACKAGE OUTLINE M03 NEW M03 PACKAGE: pi • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance	OCR Scan	PDF	NE681M03 NE681M03 NE681 4e-12 24-Hour bjt npn m03

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Panduit Corp DNE6812B

California Eastern Laboratories (CEL) NE68118-A

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California Eastern Laboratories (CEL) NE68139-T1

California Eastern Laboratories (CEL) NE681M03-A

NE681 Datasheets (66)

NE681 Datasheets Context Search

NE68135

NE68118

kf 203 transistor

ic 741 free

Untitled

Untitled

ic 741 free

Untitled

Untitled

Untitled

2SA1977

2SC3583

NE681M03

c 5929 transistor

UPA802T

2SC5650

2SC5615

Untitled

Transistors BF 494

NE66100

transistor npn c 6073

NE68019

Untitled

bjt npn m03