NES1821 Search Results

gaas fet T79

Abstract: NES1821B-30
Contextual Info: PRELIMINARY DATA SHEET 30 W L-BAND NES1821B-30 POWER GaAs MESFET OUTLINE DIMENSIONS Units in mm FEATURES • CLASS A OR AB OPERATION PACKAGE OUTLINE T-79 • HIGH OUTPUT POWER • HIGH GAIN 24±0.2 20.4±0.15 • HIGH POWER ADDED EFFICIENCY 1.0±0.1 GATE

NES1821P-50

Abstract: D2010
Contextual Info: 50W L-BAND PUSH-PULL POWER GaAs MESFET FEATURES • • NES1821P-50 OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 50 W TYP HIGH DRAIN EFFICIENCY: 52 % TYP @ VDS = 10 V, ID = 2 A, f = 1.96 GHz HIGH LINEAR GAIN: 10.5 dB TYP • PUSH-PULL CONFIGURATION

GaAs MESFET

Abstract: NES2527B-30 MESFET NE6500278 NEL2000 NES1821B-50 NEZ1011 NEZ1414 NEZ5964
Contextual Info: Power NEW! NES2527B-30 GaAs MESFET • 30 Watts POUT, 13.0 dB Gain • 2.1–2.7GHz Wideband Operation PCS and Cellular Base Station NEW! NES1821B-50 GaAs MESFET Wireless Local Loop and Wireless Cable MMDS • 47.0 dBm POUT @ 1.9GHz • 11.0 dB Linear Gain

Contextual Info: DATA SHEET_ NEC N-CHANNEL GaAs MES FET NES1821P-50 50 W L-BAND PUSH-PULL POWER GaAs MESFET DESCRIPTION The NES1821P-50 is a 50 W push-pull type GaAsMESFETdesigned forhigh power transmitter applications for PCS, DCS and PHS base station systems. It is capableof delivering 50 wattsof output power CW

POUT36

Abstract: NES1821B-30 p1209
Contextual Info: DATA SHEET PRELIMINARY DATA SHEET GaAs MES FET NES1821B-30 30W L-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm The NES1821B-30 is power GaAs FET which provides high output power and high gain in the 1.8-2.1 GHz 24±0.3

ES1821

Abstract: M 0737
Contextual Info: PRELIMINARY DATA SHEET 30 W L-BAND NES1821 B-30 POWER GaAs MESFET FEATURES_ OUTLINE DIMENSIONS Units in mm • C L A S S A OR AB OPERATION P A C K A G E OUTLIN E T-79 • HIGH OUTPUT POW ER • HIGH GAIN • HIGH POW ER ADDED EFFICIENCY • PARTIALLY M ATCHED

610-150

Abstract: nec d 1590 NES1821P-50
Contextual Info: DATA SHEET N-CHANNEL GaAs MES FET NES1821P-50 50 W L-BAND PUSH-PULL POWER GaAs MESFET DESCRIPTION The NES1821P-50 is a 50 W push-pull type GaAs MESFET designed for high power transmitter applications for PCS, DCS and PHS base station systems. It is capable of delivering 50 watts of output power CW with high linear

Contextual Info: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs MES FET NES1821P-30 30 W L-S BAND PUSH-PULL POWER GaAs MESFET DESCRIPTION The NES1821P-30 is a 30 W push-pull type GaAs MESFET designed for high power transmitter applications for PCS, DCS and PHS base station systems. It

ne6500278

Abstract: NEZ1414 NES2527B-30 NE1280100 NE6501077 NE85001 NE850R5 NES1821B-30 NES1821P-50
Contextual Info: Power GaAs FET Selection Graph Devices by Power by Frequency 49.0 NEZ4450-15D/15DL NES1821P-50 47.0 NES1821B-30 NEZ5964-15D/15DL NES2527B-30 NEZ6472-15D/15DL 45.0 NEZ3642-15D/15DL NEZ7785-15D/15DL 43.0 NEZ7177-8D/8DL 41.0 NEZ3642-8D NEZ4450-8D/8DL NEZ7785-8D/8DL

nec 0882

Abstract: NEC 1601 fet nec 0882 p
Contextual Info: DATA SHEET_ N-CHANNEL GaAs MES FET NES1821P-50 50 W L-BAND PUSH-PULL POWER GaAs MESFET DESCRIPTION The NES1821P-50 is a 50 W. push-pull type GaAs MESFET designed forhigh power transmitter applications for PCS, DCS and PHS base station systems. It Is capable of delivering 50 watts of output power CW with high linear

NEC D 809 F

Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET NES1821B-30 30W L-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm The NES1821B-30 is power GaAs FET which provides high output power and high gain in the 1.8-2.1 GHz band. Internal input

NES1821B-30

Abstract: gaas fet T79 d3125
Contextual Info: 30 W L-BAND NES1821B-30 POWER GaAs MESFET OUTLINE DIMENSIONS Units in mm FEATURES • CLASS A OR AB OPERATION PACKAGE OUTLINE T-79 • HIGH OUTPUT POWER • HIGH GAIN 24±0.2 20.4±0.15 • HIGH POWER ADDED EFFICIENCY 1.0±0.1 GATE • PARTIALLY MATCHED

Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET NES1821B-30 30W L-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm The N E S 1 82 1B -3 0 is p o w e r G aA s FET w h ich provides high o u tp u t p o w e r and high gain in the 1.8-2.1

nec k 813

Abstract: NES1821P-30
Contextual Info: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NES1821P-30 30 W L-S BAND PUSH-PULL POWER GaAs MESFET DESCRIPTION The NES1821P-30 is a 30 W push-pull type GaAs MESFET designed for high power transmitter applications for PCS, DCS and PHS base station systems. It is capable of delivering 30 watts of output power CW with high linear

micro servo 9g

Abstract: uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518
Contextual Info: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call

NES1821B-30

Abstract: NEC D 809 F
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

2SK2396

Abstract: PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711
Contextual Info: CD-ROM版RF & マイクロ波デバイス CD-ROM X13769XJ2V0CD00 11−1 RF & マイクロ波デバイス IC • 可変利得増幅器（µ PCx×××，µPG××××） 品 名 µPC8119T アプリケーション 移動通信 電源電圧 電流 周波数

uPD16305

Abstract: uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943
Contextual Info: Search by Product Name Find tool 1. Click the icon on the tool bar. 2. The find dialog box will be displayed. 3. Input the full product name or part of the product name to Find be located and click . 4. A characteristic table will be displayed if the retrieved product name is clicked.

nf025

Abstract: NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408
Contextual Info: CD-ROM RF and Microwave Devices CD-ROM X13769XJ2V0CD00 11-1 RF and Microwave Devices IC • AGC AMP. µ PCx×××, µPG×××× Part Number Applications Supply Voltage (V) Supply Current (mA) Operating Frequency (MHz) µPC8119T Mobile Comm. 3 11 100–1920

lg crt monitor circuit diagram

Abstract: micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION LG lcd tv tuner pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY
Contextual Info: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 October 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of

Contextual Info: PRELIMINARY DATA SHEET 50W L-BAND PUSH-PULL POWER GaAs MESFET FEATURES_ • • • HIGH OUTPUT POWER: 50 W TYP HIGH DRAIN EFFICIENCY: 52 % TYP @ V ds = 10 V, Id = 2 A, f = 1.96 GHz HIGH LINEAR GAIN: 10.5 dB TYP • PUSH-PULL CONFIGURATION

Contextual Info: PRELIMINARY DATA SHEET 50W L-BAND PUSH-PULL POWER GaAs MESFET F E A T U R E S _ • HIGH OUTPUT POWER: 50 W TYP • HIGH DRAIN EFFICIENCY: 52 % TYP @ V d s = 10 V, Id = 2 A, f = 1.96 GHz • HIGH LINEAR GAIN: 10.5 dB TYP • PUSH-PULL CONFIGURATION

NES1821P-50

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

gaas fet T79

Abstract: ES182
Contextual Info: PRELIMINARY DATA SHEET_ 30 W L-BAND POWER GaAs MESFET OUTLINE DIMENSIONS FEATURES_ NE81K1M0 Units n mm • CLASS A OR AB OPERATION P A C K A G E OUTLINE T-79 • HIGH OUTPUT POWER • HIGH GAIN • HIGH POWER ADDED EFFICIENCY