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    NGTB30N120IHRWG Datasheets (1)

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    NGTB30N120IHRWG
    On Semiconductor NGTB30N120I - IGBT 1200V 30A FS2-RC Induction Heating Original PDF 178.82KB 10

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    Contextual Info: NGTB30N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering


    Original
    NGTB30N120IHRWG NGTB30N120IHR/D PDF

    Contextual Info: NGTB30N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering


    Original
    NGTB30N120IHRWG NGTB30N120IHR/D PDF