NGTB40N120FL2WG Search Results
NGTB40N120FL2WG Price and Stock
onsemi NGTB40N120FL2WGIGBT TRENCH FS 1200V 80A TO-247 |
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NGTB40N120FL2WG | Tube | 1 |
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NGTB40N120FL2WG | Tube | 21 Weeks | 210 |
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NGTB40N120FL2WG | 2 | 1 |
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NGTB40N120FL2WG | 50 |
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NGTB40N120FL2WG | 210 |
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NGTB40N120FL2WG | 21 Weeks | 210 |
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NGTB40N120FL2WG | 22 Weeks | 30 |
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NGTB40N120FL2WG | 23 Weeks | 30 |
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NGTB40N120FL2WG | 150 |
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NGTB40N120FL2WG | 21 |
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NGTB40N120FL2WG | 34,662 |
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NGTB40N120FL2WG Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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NGTB40N120FL2WG |
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IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 80A 535W TO247 | Original | 10 |
NGTB40N120FL2WG Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: NGTB40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited |
Original |
NGTB40N120FL2WG NGTB40N120FL2W/D | |
Contextual Info: NGTB40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited |
Original |
NGTB40N120FL2WG NGTB40N120FL2W/D | |
Contextual Info: NGTB40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited |
Original |
NGTB40N120FL2WG NGTB40N120FL2W/D | |
Contextual Info: NGTB40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited |
Original |
NGTB40N120FL2WG NGTB40N120FL2W/D | |
G40N120FL2Contextual Info: NGTG40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited |
Original |
NGTG40N120FL2WG NGTG40N120FL2W/D G40N120FL2 |