NP86N04EHE Search Results

NP86N04DHE

Abstract: NP86N04EHE MP-25 NP86N04CHE
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR NP86N04CHE, NP86N04DHE, NP86N04EHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION This product is N-channel MOS Field Effect Transistor designed for high current switching applications.

transistor di 960

Contextual Info: PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR NP86N04CHE, NP86N04DHE, NP86N04EHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching

NP86N04MHE

Abstract: NP86N04NHE NP86N04CHE NP86N04DHE NP86N04EHE NP86N04EHE-E1-AY NP86N04EHE-E2-AY NP86N04KHE NP86N04KHE-E1-AY NP86N04KHE-E2-AY
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP86N04EHE, NP86N04KHE NP86N04CHE, NP86N04DHE, NP86N04MHE, NP86N04NHE SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications.

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP86N04CHE, NP86N04DHE, NP86N04EHE SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES

transistor di 960

Abstract: MP-25 NP86N04CHE NP86N04DHE NP86N04EHE NP86N04KHE
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP86N04CHE,NP86N04DHE,NP86N04EHE,NP86N04KHE SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect PART NUMBER PACKAGE NP86N04CHE TO-220AB NP86N04DHE TO-262 NP86N04EHE

2SK2500

Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
Contextual Info: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose

STF12A80

Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
Contextual Info: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

NP86N04MHE

Abstract: NP86N04CHE NP86N04DHE NP86N04EHE NP86N04EHE-E1-AY NP86N04EHE-E2-AY NP86N04KHE NP86N04KHE-E1-AY NP86N04KHE-E2-AY NP86N04NHE
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

TO-252 MOSFET p channel

Abstract: NP80N03CLE NP80N03DLE NP80N03ELE NP80N04CHE NP80N04DHE NP80N04EHE NP84N04CHE NP84N04DHE NP84N04EHE
Contextual Info: Power house NP-Series 4/99 l TJ, MAX = 175° C l Ultra low On-Resistance RDS ON l Low Gate-Charge l Avalanche Energy rated MOSFET by NEC: W e l l - b u i l t Our hotheads can take the heat. Up to 175° C. Target Market and Applications l Automotive - Electric Power Steering

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

TO-252 MOSFET p channel

Abstract: nec 288 powermosfet Gate Drive STR 1504 TO-262 MOSFET NP80N03CLE NP80N03DLE NP80N04CHE NP80N04DHE NP84N04CHE
Contextual Info: Power house NP-Series Q3/2001 ● TJ, MAX = 175° C ● Ultra low On-Resistance RDS ON ● Low Gate-Charge ● Avalanche Energy rated MOSFET by NEC: W e l l - b u i l t Our hotheads can take the heat. Up to 175° C. Target Market and Applications l Automotive