NTE60 Search Results
NTE60 Datasheets (81)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NTE60 |
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NPN Silicon Complementary Transistor High Power Audio, Disk Head Positioner for Linear Applications | Original | 23.88KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NTE600 |
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DIODE GEN PURP 5V 50MA DO7 | Original | 65.85KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NTE6002 |
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Silicon Power Rectifier Diode, 40 Amp | Original | 26.51KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NTE6003 |
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Silicon Power Rectifier Diode, 40 Amp | Original | 26.51KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NTE6004 |
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Silicon Power Rectifier Diode, 40 Amp | Original | 26.51KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NTE6005 |
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Silicon Power Rectifier Diode, 40 Amp | Original | 26.5KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NTE6006 |
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Fast Recovery Rectifier, 40A, 200ns | Original | 20.46KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NTE6007 |
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Fast recovery rectifier, 200ns. Anode to case. Peak repetitive reverse voltage 200V. Average rectified forward current 40A. | Original | 20.46KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NTE6008 |
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Fast recovery rectifier, 200ns. Cathode to case. Peak repetitive reverse voltage 400V. Average rectified forward current 40A. | Original | 20.46KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NTE6009 |
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Fast recovery rectifier, 200ns. Anode to case. Peak repetitive reverse voltage 400V. Average rectified forward current 40A. | Original | 20.46KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NTE601 |
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Silicon Varistor Temperature Compensating Diode | Original | 15.67KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NTE6010 |
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Fast recovery rectifier, 200ns. Cathode to case. Peak repetitive reverse voltage 600V. Average rectified forward current 40A. | Original | 20.46KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NTE6011 |
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Fast Recovery Rectifier, 40A, 200ns | Original | 20.46KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NTE6013 |
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Silicon Industrial Rectifier 20 Amp | Original | 19.44KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NTE6020 |
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Industrial Silicon Rectifier, 60A | Original | 23.77KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NTE6021 |
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Industrial silicon recfifier. Anode to case. Max peak repetitive reverse voltage 50V. Max average forward current 60A. | Original | 23.76KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NTE6022 |
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Industrial silicon recfifier. Cathode to case. Max peak repetitive reverse voltage 100V. Max average forward current 60A. | Original | 23.76KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NTE6023 |
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Industrial silicon recfifier. Anode to case. Max peak repetitive reverse voltage 100V. Max average forward current 60A. | Original | 23.76KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NTE6026 |
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Industrial silicon recfifier. Cathode to case. Max peak repetitive reverse voltage 200V. Max average forward current 60A. | Original | 23.76KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NTE6027 |
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Industrial silicon recfifier. Anode to case. Max peak repetitive reverse voltage 200V. Max average forward current 60A. | Original | 23.76KB | 2 |
NTE60 Price and Stock
NTE Electronics Inc NTE6093Rectifier Diodes, common Cathode, schottky,60V V(Rrm),to-247Var |Nte Electronics NTE6093 |
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NTE6093 | Bulk | 1 | 1 |
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NTE6093 | 67 |
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NTE Electronics Inc NTE6068Rectifier, 70A, 800V, Do-5; Repetitive Peak Reverse Voltage:800V; Average Forward Current:70A; Forward Voltage Max:1.25V; Diode Module Configuration:-; Diode Case Style:Do-5; No. Of Pins:2Pins; Operating Temperature Max:190°C Rohs Compliant: Yes |Nte Electronics NTE6068 |
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NTE6068 | Bulk | 1 |
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NTE6068 | Bulk | 1 | 3 Weeks | 1 |
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NTE6068 | 1 |
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NTE Electronics Inc NTE6020Rectifier Diode,50V V(Rrm),do-203Var1/4 Rohs Compliant: Yes |Nte Electronics NTE6020 |
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NTE6020 | Bulk | 1 |
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NTE Electronics Inc NTE6044Standard Diode, 60A, 1Kv, Do-5; Repetitive Peak Reverse Voltage:1Kv; Average Forward Current:60A; Forward Voltage Max:1.4V; Diode Module Configuration:-; Diode Case Style:Do-5; No. Of Pins:2Pins; Operating Temperature Max:175°C Rohs Compliant: Yes |Nte Electronics NTE6044 |
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NTE6044 | Bulk | 1 |
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NTE6044 | 2 | 1 |
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NTE Electronics Inc NTE6004Rectifier Diode,40A, 1.6Kv, Do-5; Repetitive Peak Reverse Voltage:1.6Kv; Average Forward Current:40A; Forward Voltage Max:1.3V; Diode Module Configuration:-; Diode Case Style:Do-5; No. Of Pins:2Pins; Operating Temperature Max:190°C Rohs Compliant: Yes |Nte Electronics NTE6004 |
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NTE6004 | Bulk | 1 |
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NTE6004 | 1 |
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NTE6004 | 1 |
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NTE60 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: NTE5906, NTE5907, NTE5980 thru NTE6005 Silicon Power Rectifier Diode, 40 Amp, DO5 Features: D High Surge Current Capability D High Voltage Available D Designed for a Wide Range of Applications D Available in Anode−to−Case or Cathode−to−Case Style Ratings and Characteristics: |
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NTE5906, NTE5907, NTE5980 NTE6005 | |
NTE6087
Abstract: avalanche diode 30A 30A 45V SCHOTTKY BARRIER RECTIFIER
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NTE6087 NTE6087 avalanche diode 30A 30A 45V SCHOTTKY BARRIER RECTIFIER | |
diode schottky 1000V 10a
Abstract: 20A SCHOTTKY BARRIER RECTIFIER NTE6080 diode 1000V 20a Schottky diode TO220
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NTE6080 NTE6080 150mA diode schottky 1000V 10a 20A SCHOTTKY BARRIER RECTIFIER diode 1000V 20a Schottky diode TO220 | |
NTE5980
Abstract: NTE5906 NTE5907 NTE6005 "Power rectifier Diode"
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NTE5906, NTE5907, NTE5980 NTE6005 500Aal-Mechanical NTE5906 NTE5907 NTE6005 "Power rectifier Diode" | |
Contextual Info: NTE600 Silicon Varistor Temperature Compensating Diode Features: D Temperature Compensation Applications D Bias Compensation Applications D Hermetically Sealed Miniature Glass Package Absolute Maximum Ratings; Continuous Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V |
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NTE600 150mA | |
Contextual Info: NTE6088 Silicon Dual Schottky Rectifier Description: The NTE6088 is a silicon dual power rectifier in a TO220 type package designed using the Schottky Barrier principle with a platinum barrier metal. Features: D Low Power Loss, High Efficiency D Guarding for Stress Protection |
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NTE6088 NTE6088 | |
NTE6047
Abstract: NTE6046
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NTE6046 NTE6047 NTE6046) NTE6047) NTE6047 NTE6046 | |
NTE6036
Abstract: NTE6037
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NTE6036 NTE6037 NTE6036) NTE6037) NTE6036 NTE6037 | |
NTE6086
Abstract: NTE6088 diode schottky 1000V 10a
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NTE6088 NTE6086 NTE6088 diode schottky 1000V 10a | |
NTE6080Contextual Info: NTE6080 Silicon Schottky Barrier Rectifier Description: The NTE6080 is a silicon switchmode power rectifier using the Schottky Barrier principle with a platinum barrier metal. Features: D Guard–Ring for Stress Protection D Low Forward Voltage D +150°C Operating Junction Temperature |
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NTE6080 NTE6080 150mA | |
NTE6032
Abstract: NTE6033
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NTE6032 NTE6033 NTE6032) NTE6033) NTE6032 NTE6033 | |
NTE6076
Abstract: NTE6077 NTE6078 NTE6079 NTE6070 NTE6071 NTE6074 NTE6075
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NTE6070 NTE6079 NTE6079 NTE6076 NTE6077 NTE6078 NTE6071 NTE6074 NTE6075 | |
NTE6083Contextual Info: NTE6083 Schottky Barrier Rectifier 45V, 10 Amp, 2−Lead TO220 Features: D Low Power Loss, High Efficiency D High Current Capability, Low VF D High Surge Capacity Applications: D Low Voltage, High Frequency Inverters D Free Wheeling Applications D Polarity Protection Applications |
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NTE6083 NTE6083 | |
NTE6008
Abstract: NTE6010 NTE6007 NTE6009 NTE6006 NTE6011
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NTE6006 NTE6011 200ns NTE6011 150ns 250kHz. NTE6006, NTE6007* NTE6008 NTE6010 NTE6007 NTE6009 | |
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NTE5980
Abstract: NTE5906 NTE5907 NTE6005
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NTE5906, NTE5907, NTE5980 NTE6005 50rmal NTE5906 NTE5907 NTE6005 | |
NTE6092Contextual Info: NTE6092 Silicon Schottky Barrier Rectifier Features: D Guarding for Stress Protection D Low Forward Voltage D +125°C Operating Junction Temperature Maximum and Electrical Ratings: Maximum Peak Repetitive Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V |
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NTE6092 100mA NTE6092 | |
NTE6074
Abstract: NTE6077 NTE6078 NTE6079 NTE6071 NTE6070 NTE6075 NTE6076
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NTE6070 NTE6079 NTE6079 NTE6074 NTE6077 NTE6078 NTE6071 NTE6075 NTE6076 | |
NTE6086
Abstract: diode schottky 1000V 10a
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NTE6086 NTE6086 diode schottky 1000V 10a | |
NTE6082Contextual Info: NTE6082 Silicon Schottky Barrier Rectifier Description: The NTE6082 is a silicon switchmode power rectifier using the Schottky Barrier principle with a platinum barrier metal. Features: D Guardiring for Stress Protection D Low Forward Voltage D +150°C Operating Junction Temperature |
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NTE6082 NTE6082 | |
NTE6084Contextual Info: NTE6084 Silicon Rectifier Schottky Barrier Description: The NTE6084 is a silicon power rectifier in a DO4 type package designed using the Schottky Barrier principle with a platinum barrier metal. Features: D Guardring for Stress Protection D Low Forward Voltage |
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NTE6084 NTE6084 100kHz | |
NTE6081Contextual Info: NTE6081 Silicon Schottky Barrier Rectifier Description: The NTE6081 is a silicon switchmode power rectifier using the Schottky Barrier principle with a platinum barrier metal. Features: D Guardiring for Stress Protection D Low Forward Voltage D +150°C Operating Junction Temperature |
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NTE6081 NTE6081 | |
NTE6008
Abstract: sonar NTE6006 NTE6007 NTE6009 NTE6010 NTE6011
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NTE6006 NTE6011 200ns NTE6011 150ns 250kHz. NTE6006, NTE6007* NTE6008 sonar NTE6007 NTE6009 NTE6010 | |
NTE6091Contextual Info: NTE6091 Silicon Schottky Barrier Rectifier Features: D Guarding for Stress Protection D Low Forward Voltage D +125°C Operating Junction Temperature Maximum and Electrical Ratings: Maximum Peak Repetitive Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V |
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NTE6091 100mA NTE6091 | |
NTE601
Abstract: Varistor Temperature Compensating Diode
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NTE601 150mA 150mW NTE601 Varistor Temperature Compensating Diode |