OPA8535HN Search Results
OPA8535HN Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
OPA8535HNContextual Info: OPA8535HN Infrared LED Chip High Speed / N Side-Up GaAlAs/GaAlAs 1. Material Substrate GaAlAs P Type Removed Epitaxial Layer GaAlAs (N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol |
Original |
OPA8535HN --------------------130um OPA8535HN | |
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Contextual Info: OPA8535HN Infrared LED Chip GaAlAs/GaAlAs High Speed / N Side-Up 1. Material Substrate GaAlAs P Type Removed Epitaxial Layer GaAlAs (N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol |
Original |
OPA8535HN Junctio50mA --------------------130um |