OPA8930HN Search Results
OPA8930HN Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
OPA8930HNContextual Info: OPA8930HN Infrared LED Chip High Speed / N Side-Up GaAlAs/GaAlAs 1. Material Substrate GaAlAs P Type Removed Epitaxial Layer GaAlAs (N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol |
Original |
OPA8930HN --------------------130um OPA8930HN | |
|
Contextual Info: OPA8930HN Infrared LED Chip GaAlAs/GaAlAs High Speed / N Side-Up 1. Material Substrate GaAlAs P Type Removed Epitaxial Layer GaAlAs (N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol |
Original |
OPA8930HN --------------------130um |