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    OPA9437EU

    Abstract: Au Sn eutectic
    Text: Infrared LED Chip OPA9437EU GaAlAs/GaAs 1. Material Substrate GaAs P Type Epitaxial Layer GaAlAs(N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy (Au/Sn Eutectic Metal) Parameter Symbol Min 3. Electro-Optical Characteristics Forward Voltage VF


    Original     		PDF OPA9437EU 100mA 14mil 15mil 130um 14mil OPA9437EU Au Sn eutectic

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    Abstract: No abstract text available
    Text: Infrared LED Chip OPA9437EU GaAlAs/GaAs 1. Material Substrate GaAs P Type Epitaxial Layer GaAlAs(N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy (Au/Sn Eutectic Metal) Parameter Symbol Min 3. Electro-Optical Characteristics Forward Voltage VF


    Original     		PDF OPA9437EU 100mA 14mil 15mil 130um 14mil