OPB0462 Search Results
OPB0462 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
OPB0462Contextual Info: Silicon Photo Transistor OPB0462 1. Structure 1.1 Chip Size : 0.46mm X 0.46mm 1.2 Chip thickness : 180±15um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 135um - Base : 70um X 70um Ta=25℃ |
Original |
OPB0462 135um 500uA OPB0462 | |
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Contextual Info: Silicon Photo Transistor OPB0462 1. Structure 1.1 Chip Size : 0.46mm X 0.46mm 1.2 Chip thickness : 180 15um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 135um - Base : 70um X 70um 2. Guaranteed Probed Electrical Characteristics |
Original |
OPB0462 135um 500uA |